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Infineon Technologies S29GL512T11DHIV13
- Part No.:
- S29GL512T11DHIV13
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL512T11DHIV13.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,008
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Product details
Overview
S29GL512T11DHIV13 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, operating from 2.7 V to 3.6 V with 100 ns random access time and 15 ns page access time. It features a 512-byte write buffer, internal single-bit ECC, uniform 128-KB sector erase, and supports industrial temperature range (–40°C to +85°C). It is used in boot code storage for industrial controllers requiring fast XIP execution and reliable non-volatile program retention.
For engineers reviewing the S29GL512T11DHIV13 datasheet, S29GL512T11DHIV13 pinout, S29GL512T11DHIV13 application, or S29GL512T11DHIV13 equivalent, key selection criteria include verified 100,000 program/erase cycles, 20-year data retention, OTP array with four lockable SSR regions, CFI compliance, and support for suspend/resume during embedded operations.
Technical Context
This device implements an asynchronous parallel interface with ×8/×16 configurable data bus and byte/word boundary addressing. Its embedded algorithm controller (EAC) executes program and erase operations autonomously, while hardware ECC corrects single-bit errors on-the-fly during read cycles.
The versatile I/O feature enables VIO operation from 1.65 V to VCC, decoupling I/O voltage from core supply. Sector protection includes volatile and non-volatile methods per 128-KB sector, and the 2048-byte OTP array contains four separately lockable SSR regions - SSR0 factory-locked, SSR3 password-read-protected.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 512 Mb (64 MB), sufficient for full firmware images in industrial microcontroller boot memory |
| Random access time (tACC) | 100 ns at –40°C to +85°C, enabling real-time XIP execution without CPU wait states |
| Page access time (tPACC) | 15 ns, accelerating sequential instruction fetch in page mode |
| Write buffer size | 512 bytes, allowing burst programming of up to 256 words per command for reduced effective write latency |
| ECC capability | Internal hardware single-bit error correction, eliminating need for external ECC logic in host system |
| Endurance & retention | 100,000 program/erase cycles and 20-year data retention, meeting long-life industrial deployment requirements |
| Operating temperature | –40°C to +85°C (Industrial grade), validated for use in programmable logic controllers and HMI systems |
Pinout & Package
Package: 56-pin TSOP (Thin Small Outline Package), 14 mm × 20 mm body, standard JEDEC MO-141AC footprint, compatible with automated PCB assembly and reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A22 | Address inputs | 23-bit address bus supporting full 512 Mb linear addressing (byte/word boundary aligned) |
| DQ0–DQ15 | Data I/O | Configurable ×8 or ×16 bidirectional data bus; DQ15 functions as BYTE# in ×8 mode |
| CE# | Chip enable | Active-low chip select; tCE = 100 ns max, defines device activation timing window |
| OE# | Output enable | Active-low read strobe; tOE = 25 ns max, controls data bus output timing |
| WE# | Write enable | Active-low control for write/program/erase command latching and data capture |
| RY/BY# | Ready/Busy indicator | Open-drain active-low signal indicating internal operation progress or completion |
| VCC | Core supply | 2.7 V to 3.6 V single supply powering logic and memory array; no separate VPP required |
| VIO | I/O supply | 1.65 V to VCC versatile I/O voltage, enabling interoperability with mixed-voltage host interfaces |
Key Features
| Feature | Design Value |
|---|---|
| 45-nm MIRRORBIT™ process | Enables higher density and lower power vs. older floating-gate NOR, with improved cell reliability |
| Asynchronous 32-byte page read | Reduces average instruction fetch latency in XIP applications compared to full-word random access |
| Separate 2048-byte OTP array | Provides secure storage for calibration data, keys, or configuration parameters with hardware-based region locking |
| Common Flash Interface (CFI) | Enables automatic detection and configuration by bootloader or flash programmer without hard-coded timing tables |
| Suspend/Resume commands | Allows interruption of long erase or program operations to service high-priority reads, improving system responsiveness |
Applications
| Industrial PLC Firmware Storage | Medical Device Boot Memory |
|---|---|
Use Scenario: Storing boot loader and real-time control firmware in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile boot memory providing XIP-capable instruction fetch with ≤100 ns access for deterministic task scheduling. Use Value: Eliminates external SRAM copy step; 20-year data retention ensures firmware integrity over equipment lifetime without refresh. | Use Scenario: Holding certified diagnostic firmware and safety-critical initialization routines in portable ultrasound and infusion pump systems. IC Role / Device Role / Timing Role: Secure, AEC-Q100–compatible boot memory with OTP-protected calibration constants and locked SSR0 for regulatory traceability. Use Value: Meets IEC 62304 software lifecycle requirements via hardware-enforced write protection and ECC-corrected reads. |
| Telecom Base Station Control | Energy Meter Firmware Archive |
Use Scenario: Hosting field-upgradable FPGA configuration bitstreams and baseband processor firmware in outdoor 4G/5G remote radio units. IC Role / Device Role / Timing Role: High-reliability parallel flash with suspend/resume support for background OTA updates without interrupting RF processing. Use Value: 100,000-cycle endurance allows >10 years of quarterly firmware patches under thermal cycling conditions. | Use Scenario: Archiving metrology firmware, tariff tables, and tamper logs in ANSI C12.22–compliant smart electricity meters operating in unattended substations. IC Role / Device Role / Timing Role: Long-retention, low-power standby memory (100 μA) retaining critical billing data during grid outages. Use Value: Verified 20-year retention at +85°C ensures meter accuracy compliance across full service life without battery backup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S11DHIV10 | Same density and package, but uses older 65-nm process; 110 ns tACC, no OTP array | Lacks SSR locking and CFI-enhanced auto-configuration; suitable only for legacy designs without security needs | Select only if cost sensitivity outweighs ECC, OTP, and 45-nm reliability benefits |
| MX29GL512FHI-11G | 512 Mb parallel NOR, 100 ns tACC, but no built-in ECC or suspend/resume commands | Requires external error handling and cannot pause erase during critical reads; limited to non-safety-critical firmware | Choose when host MCU handles ECC and timing constraints allow longer uninterrupted erase windows |
Compared with S29GL512S11DHIV10 and MX29GL512FHI-11G, the S29GL512T11DHIV13 delivers superior system-level robustness through integrated ECC, hardware OTP security, and operational flexibility via suspend/resume-reducing host software complexity and qualification effort in safety- or longevity-critical applications.
Availability
S29GL512T11DHIV13 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device boot memory, and telecom base station control requiring stable component supply across extended product lifecycles.
Supply support for S29GL512T11DHIV13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and high-reliability memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The GL-T family targets embedded systems needing XIP-capable, high-endurance parallel NOR flash with industrial temperature tolerance, hardware security, and seamless integration into legacy 16-bit bus architectures.
FAQ
Does S29GL512T11DHIV13 support both ×8 and ×16 data bus configurations?
Yes. The device supports configurable ×8 or ×16 operation via the BYTE# pin (DQ15). In ×16 mode, all DQ0–DQ15 are active; in ×8 mode, DQ8–DQ15 are disabled and DQ15 serves as BYTE#. Address lines remain identical in both modes, with A0–A22 covering the full 512 Mb space.
What is the function of the SSR0–SSR3 regions in the OTP array?
SSR0–SSR3 are four independently lockable 512-byte subregions within the 2048-byte OTP array. SSR0 is factory-locked and read-only; SSR1 and SSR2 can be permanently locked via command; SSR3 supports password-protected read access. These enable tiered security for calibration data, keys, and firmware signatures.
How does the suspend/resume feature operate during sector erase?
During a sector erase, issuing the Suspend command halts the erase operation and places the device in read mode within 10 µs. Host can then perform urgent reads. Resume command restarts the suspended erase from its prior state. This avoids mandatory full-erase aborts and preserves wear leveling integrity.
Is VIO voltage required to match VCC for proper operation?
No. VIO may range from 1.65 V to VCC, enabling interfacing with 1.8 V or 2.5 V host logic while maintaining 3.0 V core operation. Timing parameters adjust automatically based on VIO level - e.g., tACC increases from 100 ns to 110 ns when VIO = 1.8 V at +85°C - as specified in the datasheet's Versatile I/O table.
S29GL512T11DHIV13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 110 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (9x9)
S29GL512T11DHIV13 FAQ
1.How can I place an order for S29GL512T11DHIV13 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T11DHIV13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T11DHIV13 reliable?
The price and inventory of S29GL512T11DHIV13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T11DHIV13 is usually 5 days.
3.What payment methods are accepted for S29GL512T11DHIV13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T11DHIV13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T11DHIV13?
S29GL512T11DHIV13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T11DHIV13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T11DHIV13?
For technical support, including S29GL512T11DHIV13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T11DHIV13 requirements.
6.How does Aetrix verify that S29GL512T11DHIV13 is sourced from the original manufacturer or authorized distributors?
All S29GL512T11DHIV13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T11DHIV13 meets industry standards.
7.What is the process for return or replacement of S29GL512T11DHIV13?
All S29GL512T11DHIV13 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T11DHIV13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T11DHIV13 part is unused and in its original packaging.
Return procedure for S29GL512T11DHIV13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T11DHIV13 Tags
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