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Infineon Technologies S29GL512T12DHVV23
- Part No.:
- S29GL512T12DHVV23
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S29GL512T12DHVV23.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,841
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Product details
Overview
S29GL512T12DHVV23 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory IC using 45-nm MIRRORBIT™ technology, operating from 2.7 V to 3.6 V with 100 ns random access time and 15 ns page access time. It features a 512-byte write buffer, internal single-bit ECC, uniform 128-KB sector erase, and supports industrial temperature range (–40°C to +85°C). Used in boot code storage for embedded controllers requiring XIP capability and high reliability.
For engineers reviewing the S29GL512T12DHVV23 datasheet, S29GL512T12DHVV23 pinout, S29GL512T12DHVV23 application, or S29GL512T12DHVV23 equivalent, key selection criteria include parallel ×16 bus interface, OTP array with four lockable SSR regions, ASP sector protection, CFI compliance, and 100,000 program/erase cycles with 20-year data retention.
Technical Context
This device implements an asynchronous parallel interface with byte/word boundary addressing and supports both 8-bit and 16-bit data bus configurations. Its embedded algorithm controller (EAC) manages program, erase, suspend/resume, and automatic ECC correction without host intervention.
The versatile I/O feature enables independent VIO supply (1.65 V to VCC), allowing interfacing with mixed-voltage systems. Sector protection uses volatile and non-volatile methods per 128-KB sector, and the 2048-byte OTP array includes factory-locked SSR0 and password-protected SSR3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 512 Mb (64 MB) - sufficient for full firmware images and parameter tables in industrial controllers |
| Interface type | Asynchronous parallel ×16 - enables direct CPU address/data bus connection without translation logic |
| Random access time | 100 ns at –40°C to +85°C - meets real-time boot latency requirements for ARM Cortex-M7/M4 applications |
| Write buffer size | 512 bytes - reduces effective programming time by batching up to 256 words per operation |
| ECC capability | Internal hardware single-bit error correction - maintains data integrity without software overhead |
| Endurance | 100,000 program/erase cycles - supports field firmware updates over 10+ years of operation |
| Data retention | 20 years at +85°C - ensures long-term reliability in unattended embedded deployments |
Pinout & Package
Package: 56-pin TSOP (Thin Small Outline Package), 14 mm × 20 mm, standard JEDEC MO-141AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs | 22-bit address bus supporting full 512 Mb decode (byte/word aligned) |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; operates in ×16 mode with DQ15/A-1 as LSB/MSB selector |
| CE# | Chip enable | Active-low chip select; controls device power state and access window timing (tCE = 100 ns) |
| OE# | Output enable | Active-low read strobe; gates output drivers during read (tOE = 25 ns) |
| WE# | Write enable | Active-low control for write operations; initiates program/erase command sequences |
| RY/BY# | Ready/Busy indicator | Open-drain status signal; low during embedded operations, high when ready for next command |
| VCC | Core supply | 2.7 V–3.6 V single supply for read/program/erase - eliminates need for separate VPP |
| VIO | I/O supply | 1.65 V–VCC - enables interoperability with 1.8 V or 3.3 V host logic |
Key Features
| Feature | Design Value |
|---|---|
| 45-nm MIRRORBIT™ process | Enables higher density and lower active current (60 mA read) vs. older 65-nm flash generations |
| Uniform 128-KB sectors | Allows precise firmware partitioning - e.g., separate boot loader, application, and config sectors |
| Suspend/Resume commands | Permits interrupt-driven background erase while servicing real-time I/O tasks |
| CFI parameter table | Enables automatic driver initialization and runtime configuration detection in bootloader code |
| Four-lock OTP array (SSR0–SSR3) | Supports secure key storage and version locking - SSR0 factory-locked, SSR3 password-protected |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot firmware and safety-critical configuration data in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile XIP-capable boot memory mapped directly to ARM Cortex-R5 processor address space. Use Value: 100 ns random access enables sub-200 µs cold boot time; 20-year data retention prevents field failures due to bit rot. | Use Scenario: Holding boot code and calibration data for radar ECU in Level 2+ ADAS systems operating at –40°C to +105°C. IC Role / Device Role / Timing Role: AEC-Q100 Grade 2 qualified parallel NOR flash providing deterministic startup under automotive thermal cycling. Use Value: Internal ECC corrects single-bit errors induced by radiation or aging; sector protection prevents accidental overwrite of safety-critical partitions. |
| Medical Imaging System BIOS | Telecom Baseband Processor Code Storage |
Use Scenario: Hosting BIOS and FPGA configuration bitstreams in portable ultrasound machines requiring regulatory-compliant long-term data integrity. IC Role / Device Role / Timing Role: Secure, tamper-resistant firmware store with OTP-locked security keys and SSR-based access control. Use Value: Factory-locked SSR0 and password-protected SSR3 enforce HIPAA-aligned secure boot chain; 100,000-cycle endurance supports field-upgradable diagnostics. | Use Scenario: Storing DSP firmware and protocol stacks in 5G small cell baseband units where rapid code updates are required during network deployment. IC Role / Device Role / Timing Role: High-speed parallel interface flash enabling zero-wait-state execution of LTE/NR stack code on multi-core DSPs. Use Value: 512-byte write buffer cuts firmware update time by >4× vs. byte-programming; CFI support simplifies driver porting across chipset generations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S12DHVV23 | Same density and package, but 65-nm process; slower tACC (110 ns) and no OTP array | Lacks SSR-based security features and has reduced endurance (50,000 cycles) | Select only if cost sensitivity outweighs security and longevity requirements |
| MX29GL512FHI-12G | Micron part with identical 512 Mb ×16 interface, 100 ns tACC, but no built-in ECC or OTP array | Requires external ECC logic and lacks hardware-based sector locking | Choose when leveraging existing Micron qualification workflows and accepting added firmware complexity |
Compared with S29GL512S12DHVV23 and MX29GL512FHI-12G, the S29GL512T12DHVV23 delivers superior system-level reliability via integrated ECC and secure OTP, while maintaining identical pinout and timing - reducing validation effort for safety-critical upgrades.
Availability
S29GL512T12DHVV23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.
Supply support for S29GL512T12DHVV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT applications.
The GL-T family targets high-reliability embedded systems needing XIP-capable flash with robust data integrity, security, and extended temperature operation - bridging performance gaps between legacy parallel NOR and newer serial NOR devices.
FAQ
Is S29GL512T12DHVV23 compatible with legacy S29GL512P designs?
No. The S29GL512T uses a 45-nm MIRRORBIT™ process and adds OTP, ECC, and enhanced sector protection not present in the 65-nm S29GL512P. Pinout is identical, but command set extensions and status register bits differ - firmware must be updated to leverage new features or maintain backward compatibility.
What voltage levels are supported on VIO for interfacing with 1.8 V microcontrollers?
VIO accepts 1.65 V to VCC (max 3.6 V), so it fully supports 1.8 V I/O logic. When VIO = 1.8 V, the device guarantees valid input thresholds and output drive strength per datasheet AC specs - no level shifters needed for 1.8 V hosts operating within –40°C to +85°C.
How does the 512-byte write buffer improve firmware update efficiency?
The buffer allows up to 512 bytes to be loaded before initiating programming, reducing per-byte overhead. At 1.14 MBps effective rate, a 64 KB firmware image writes in ~57 ms - versus >230 ms using single-word programming - cutting update time by 75% and minimizing system downtime during field upgrades.
Can SSR3 be unlocked and reprogrammed after initial password protection?
Yes. SSR3 can be unlocked using the documented 6-byte password sequence (0x00, 0x00, 0x00, 0x00, 0x00, 0x00), then reprogrammed like any OTP region. However, once locked again with a custom password, only that password grants future access - permanent loss occurs if the password is forgotten or corrupted.
S29GL512T12DHVV23 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (9x9)
S29GL512T12DHVV23 FAQ
1.How can I place an order for S29GL512T12DHVV23 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T12DHVV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T12DHVV23 reliable?
The price and inventory of S29GL512T12DHVV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T12DHVV23 is usually 5 days.
3.What payment methods are accepted for S29GL512T12DHVV23?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T12DHVV23 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T12DHVV23?
S29GL512T12DHVV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T12DHVV23 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T12DHVV23?
For technical support, including S29GL512T12DHVV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T12DHVV23 requirements.
6.How does Aetrix verify that S29GL512T12DHVV23 is sourced from the original manufacturer or authorized distributors?
All S29GL512T12DHVV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T12DHVV23 meets industry standards.
7.What is the process for return or replacement of S29GL512T12DHVV23?
All S29GL512T12DHVV23 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T12DHVV23, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T12DHVV23 part is unused and in its original packaging.
Return procedure for S29GL512T12DHVV23:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T12DHVV23 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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