Infineon Technologies S29GL512T12TFVV23
- Part No.:
- S29GL512T12TFVV23
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 56-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
S29GL512T12TFVV23.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 56TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,318
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Product details
Overview
S29GL512T12TFVV23 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory IC using 45-nm MIRRORBIT™ technology, operating from 2.7 V to 3.6 V with 100 ns random access time and 15 ns page access time. It features a 512-byte write buffer, hardware ECC for single-bit correction, uniform 128-KB sector erase, and supports industrial temperature range (–40°C to +85°C). It is used in boot code storage for industrial controllers requiring fast XIP execution and reliable non-volatile data retention.
For engineers reviewing the S29GL512T12TFVV23 datasheet, S29GL512T12TFVV23 pinout, S29GL512T12TFVV23 application, or S29GL512T12TFVV23 equivalent, key selection criteria include verified 100,000 program/erase cycles, OTP array with four lockable SSR regions, CFI-compliant interface, and support for suspend/resume during embedded operations.
Technical Context
This device implements an asynchronous parallel interface with ×8/×16 data bus configuration and byte/word boundary addressing. Its embedded algorithm controller (EAC) manages all program and erase operations autonomously, including automatic ECC generation and verification during write cycles.
The architecture includes dedicated address space overlays (ASOs) for Device ID/CFI, Status Register, Data Polling, SSR (OTP), and ECC status - enabling standardized software compatibility and robust error handling without host CPU intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 512 Mb (64 MB) - sufficient for full firmware images and parameter tables in resource-constrained embedded systems |
| Supply Voltage | 2.7 V to 3.6 V - single VCC rail simplifies power design and eliminates need for separate I/O voltage regulators |
| Random Access Time | 100 ns at –40°C to +85°C - enables direct XIP execution of real-time control code without cache penalty |
| Page Access Time | 15 ns - accelerates sequential instruction fetch within cached pages |
| Write Buffer Size | 512 bytes - reduces effective programming time by batching up to 256 words per command |
| ECC Support | Internal hardware single-bit error correction - ensures data integrity without software overhead or external ECC logic |
| Endurance | 100,000 program/erase cycles - validated for long-life field deployment in industrial logging and configuration storage |
| Data Retention | 20 years - guarantees firmware persistence across product lifecycle without refresh mechanisms |
Pinout & Package
Package: 56-ball VBU fortified BGA (9 mm × 7 mm), RoHS-compliant, lead-free, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 512 Mb linear addressing with byte/word boundary alignment |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; configurable as ×8 or ×16 mode via A0 and BYTE# signal |
| CE# | Chip Enable | Active-low chip select; controls device power state and enables read/write access timing windows |
| OE# | Output Enable | Active-low control for data bus output drivers; decouples read data timing from address setup |
| WE# | Write Enable | Active-low strobe for write operations; initiates embedded program/erase algorithms when combined with command sequences |
| RY/BY# | Ready/Busy Output | Open-drain status indicator - low during active program/erase, high when operation complete or ready for next command |
| VCC | Core Supply | Primary 2.7–3.6 V supply powering core logic, memory array, and internal ECC engine |
| VIO | I/O Supply | Independent 1.65–VCC I/O voltage rail - allows interfacing with mixed-voltage SoCs without level shifters |
Key Features
| Feature | Design Value |
|---|---|
| Versatile I/O (VIO) | Supports 1.65 V to VCC I/O voltage - enables direct connection to 1.8 V, 2.5 V, or 3.3 V host processors without external translation |
| Uniform Sector Architecture | 64 × 128 KB sectors - simplifies firmware partitioning, OTA update management, and secure boot region isolation |
| One-Time Programmable (OTP) Array | 2048-byte OTP with four lockable SSR regions - provides immutable storage for keys, calibration data, and device identity |
| Suspend/Resume Capability | Interruptible program/erase operations - allows high-priority read access during background writes, critical for real-time response |
| Common Flash Interface (CFI) | Standardized parameter table - enables auto-detection and driver portability across different flash vendors and densities |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot loader and safety-critical firmware in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile boot memory providing XIP-capable instruction fetch with deterministic 100 ns access latency. Use Value: Eliminates external SRAM caching requirement while ensuring 20-year data retention and 100K-cycle endurance under thermal cycling. | Use Scenario: Holding certified boot code and sensor calibration parameters in radar ECU modules compliant with AEC-Q100 Grade 2 (–40°C to +105°C). IC Role / Device Role / Timing Role: Secure, high-reliability flash memory with OTP-locked SSR3 for cryptographic key protection and tamper-resistant configuration. Use Value: Meets ASIL-B functional safety requirements via hardware ECC, sector-level write protection, and automotive-grade thermal qualification. |
| Medical Imaging System Parameter Archive | Telecom Base Station Configuration Storage |
Use Scenario: Archiving device-specific calibration coefficients and DICOM metadata in portable ultrasound units requiring long-term data integrity. IC Role / Device Role / Timing Role: High-density, low-power non-volatile storage with automatic single-bit ECC correction during readback. Use Value: Guarantees zero uncorrectable errors over 20 years, even after repeated power cycling and ambient temperature variation. | Use Scenario: Storing FPGA bitstreams, radio profile tables, and network stack configurations in outdoor macrocell base stations. IC Role / Device Role / Timing Role: Parallel NOR flash with suspend/resume capability to maintain system responsiveness during field-upgrade writes. Use Value: Enables seamless firmware updates without service interruption by pausing erase operations for urgent read requests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S12TFIV20 | Same density and package but rated for Industrial Plus (–40°C to +105°C); slightly higher tACC (110 ns) | Required for extended-temperature industrial gateways or motor drives with elevated ambient heat | Select when operating above +85°C ambient is confirmed; otherwise S29GL512T12TFVV23 offers better cost/performance at standard industrial grade |
| MX29GL512FHT2I-90G | Macronix part with identical 512 Mb density, 90 ns tACC, but no integrated hardware ECC or OTP array | Lacks built-in ECC and SSR-based security - requires external error handling and key management logic | Choose only if legacy driver compatibility or lower unit cost outweighs need for on-die ECC and secure OTP features |
Compared with S29GL512S12TFIV20 and MX29GL512FHT2I-90G, the S29GL512T12TFVV23 uniquely delivers hardware ECC, four-region OTP locking, and CFI compliance in a cost-optimized industrial-grade package - making it optimal for new designs prioritizing data integrity and firmware security without thermal derating.
Availability
S29GL512T12TFVV23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system parameter archive requiring stable component supply and long-term lifecycle support.
Supply support for S29GL512T12TFVV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions for industrial and automotive applications.
The GL-T family was designed specifically for embedded systems needing high-reliability, XIP-capable parallel NOR flash with integrated ECC and flexible I/O voltage support - targeting boot code storage where deterministic timing and data integrity are critical.
FAQ
Is S29GL512T12TFVV23 compatible with legacy S29GL512P devices?
No. The S29GL512T uses updated 45-nm MIRRORBIT™ process and revised command set versus the older 65-nm S29GL512P. While pinout is identical in VBU package, timing parameters differ (e.g., tACC = 100 ns vs. 110 ns), and CFI query responses reflect new feature flags. Migration requires validation of timing margins and firmware command sequence updates.
Does this device support byte-level programming?
Yes. S29GL512T12TFVV23 supports both single-word and multiple-word programming on the same address, including reprogramming individual bytes within a 512-byte buffer window. However, all writes must align to byte or word boundaries per the device's ×8/×16 bus configuration and require proper command sequencing via WE#/CE#/OE# control.
What is the function of the SSR0–SSR3 regions in the OTP array?
SSR0–SSR3 are four independent 512-byte lockable sectors within the 2048-byte OTP array. SSR0 is factory-locked and contains device-specific identifiers. SSR3 supports password-based read protection. SSR1 and SSR2 can be individually locked via software commands to store calibration data, encryption keys, or serial numbers with irreversible write-once security.
Can RY/BY# be used as a general-purpose GPIO?
No. RY/BY# is a dedicated open-drain status output reflecting internal program/erase progress. It cannot be driven by the host or configured as input. Its sole function is to indicate device busy state (low) or readiness (high), and it must be pulled up externally with a 4.7 kΩ resistor to VIO for proper logic-level interpretation.
S29GL512T12TFVV23 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 56-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 56-TSOP
S29GL512T12TFVV23 FAQ
1.How can I place an order for S29GL512T12TFVV23 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T12TFVV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T12TFVV23 reliable?
The price and inventory of S29GL512T12TFVV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T12TFVV23 is usually 5 days.
3.What payment methods are accepted for S29GL512T12TFVV23?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T12TFVV23 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T12TFVV23?
S29GL512T12TFVV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T12TFVV23 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T12TFVV23?
For technical support, including S29GL512T12TFVV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T12TFVV23 requirements.
6.How does Aetrix verify that S29GL512T12TFVV23 is sourced from the original manufacturer or authorized distributors?
All S29GL512T12TFVV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T12TFVV23 meets industry standards.
7.What is the process for return or replacement of S29GL512T12TFVV23?
All S29GL512T12TFVV23 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T12TFVV23, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T12TFVV23 part is unused and in its original packaging.
Return procedure for S29GL512T12TFVV23:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T12TFVV23 Tags

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STMicroelectronics
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Microchip Technology

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STMicroelectronics

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