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Infineon Technologies S29GL512T13TFNV13
- Part No.:
- S29GL512T13TFNV13
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 56-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
S29GL512T13TFNV13.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 56TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,971
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Product details
Overview
S29GL512T13TFNV13 from Infineon is a 512 Mb (64 MB) parallel NOR flash memory using 45-nm MIRRORBIT™ technology, operating from 2.7 V to 3.6 V with 100 ns random access time and 15 ns page access time. It features a 512-byte write buffer, hardware ECC for single-bit correction, uniform 128-KB sector erase, and supports industrial temperature range (–40°C to +85°C). It is used in boot code storage for industrial controllers requiring fast XIP execution and reliable non-volatile data retention.
For engineers reviewing the S29GL512T13TFNV13 datasheet, S29GL512T13TFNV13 pinout, S29GL512T13TFNV13 application, or S29GL512T13TFNV13 equivalent, key selection criteria include verified 100,000 program/erase cycles, 20-year data retention, OTP array with four lockable SSR regions, CFI compliance, and support for suspend/resume during embedded operations.
Technical Context
This device implements an asynchronous parallel interface with ×8/×16 data bus configuration and byte/word boundary addressing. Its embedded algorithm controller (EAC) manages all program and erase operations, including automatic ECC generation and verification during write cycles.
The architecture includes dedicated address space overlays (ASOs) for Device ID/CFI, Status Register, Data Polling, SSR (OTP), and ECC status - enabling standardized software drivers and robust firmware update mechanisms in resource-constrained embedded systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 512 Mb (64 MB) - sufficient for full boot image + firmware + parameter storage in industrial gateways |
| Supply Voltage | 2.7 V to 3.6 V - single VCC rail simplifies power design vs. dual-rail flash |
| Random Access Time | 100 ns at –40°C to +85°C - enables direct XIP execution without cache penalty in real-time control loops |
| Page Access Time | 15 ns - accelerates sequential instruction fetch during boot initialization |
| Write Buffer Size | 512 bytes - reduces effective programming time by up to 4× vs. single-word writes |
| ECC Support | Internal hardware single-bit error correction - eliminates need for external ECC logic in safety-critical firmware storage |
| Endurance | 100,000 program/erase cycles - supports field firmware updates over 10+ years of operation |
| Data Retention | 20 years - ensures long-term reliability in unpowered storage scenarios (e.g., backup configuration) |
Pinout & Package
Package: 56-ball VBU fortified BGA (9 mm × 7 mm), RoHS-compliant, lead-free, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 512 Mb linear addressing with byte/word boundary alignment |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; configurable as ×8 or ×16 via A0 and BYTE# signal |
| CE# | Chip Enable | Active-low chip select enabling device participation in parallel bus transactions |
| OE# | Output Enable | Controls output driver enable for read operations; decouples data bus timing from CE# |
| WE# | Write Enable | Initiates write cycles including command latching, program, and erase sequences |
| RY/BY# | Ready/Busy Output | Open-drain status indicator signaling active embedded operations (program/erase) |
| VCC | Core Supply | 2.7–3.6 V main supply powering core logic, memory array, and EAC |
| VIO | I/O Supply | 1.65 V to VCC versatile I/O voltage - allows interfacing with 1.8 V or 3.3 V host processors |
| RESET# | Hardware Reset | Asynchronous reset input clearing internal state and aborting ongoing operations |
Key Features
| Feature | Design Value |
|---|---|
| Versatile I/O (VIO) | Independent 1.65 V–VCC I/O supply enables mixed-voltage system integration without level shifters |
| 512-byte Write Buffer | Reduces average programming time per byte by >75% compared to single-word writes in firmware update routines |
| Hardware ECC | On-the-fly single-bit error correction eliminates software overhead and improves system MTBF |
| Four Lockable OTP Regions | SSR0–SSR3 provide secure storage for keys, calibration data, and bootloader signatures with factory-locked SSR0 |
| Suspend/Resume | Allows interrupting long erase operations to service high-priority reads - critical for deterministic real-time response |
Applications
| Industrial PLC Boot Memory | Automotive ADAS Firmware Storage |
|---|---|
Use Scenario: Storing boot code and real-time OS kernel for programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Primary non-volatile boot memory providing XIP-capable instruction fetch with <100 ns latency. Use Value: Enables deterministic startup within 500 ms and supports field-upgradable firmware without external ECC ICs. | Use Scenario: Holding calibrated sensor fusion algorithms and safety-critical firmware for camera-based lane detection modules. IC Role / Device Role / Timing Role: AEC-Q100 grade 2 (–40°C to +105°C) firmware storage with guaranteed 20-year data retention. Use Value: Meets ISO 26262 ASIL-B requirements via hardware ECC and sector-level protection against unintended writes. |
| Medical Imaging System Configuration | Telecom Base Station BIOS |
Use Scenario: Storing device-specific calibration tables, user preferences, and regulatory compliance settings in portable ultrasound units. IC Role / Device Role / Timing Role: Secure OTP-backed parameter storage with password-protected SSR3 region for HIPAA-compliant data isolation. Use Value: Prevents unauthorized modification of FDA-cleared calibration parameters while allowing field updates to non-critical settings. | Use Scenario: Hosting BIOS and FPGA configuration bitstreams in carrier-grade 5G baseband units requiring hot-swap capability. IC Role / Device Role / Timing Role: High-reliability parallel flash with suspend/resume for background firmware updates during active radio operation. Use Value: Eliminates service downtime during maintenance windows by enabling concurrent read/write operations across protected sectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S13TFIV13 | Same density and package but rated for industrial plus (–40°C to +105°C); slightly higher tACC (110 ns) | Required for extended temperature environments like under-hood automotive or outdoor telecom enclosures | Select when ambient operating temperature exceeds +85°C and AEC-Q100 qualification is not required |
| MX29GL512FPTI-90G | Macronix 512 Mb parallel NOR; 90 ns tACC; no integrated hardware ECC; separate OTP block | Lacks on-die ECC - requires external error handling in safety-critical designs | Choose only for cost-sensitive applications where ECC is implemented in software or external logic |
Compared with S29GL512S13TFIV13 and MX29GL512FPTI-90G, the S29GL512T13TFNV13 delivers optimal balance of industrial-grade reliability, built-in ECC, and cost-effective thermal margin - making it preferred for firmware storage where functional safety and long-term data integrity are mandatory.
Availability
S29GL512T13TFNV13 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ADAS modules, medical imaging devices, and telecom base stations requiring stable component supply across multi-year production cycles.
Supply support for S29GL512T13TFNV13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions for industrial and automotive markets.
The GL-T family targets embedded systems needing high-density, fast-access, and highly reliable parallel NOR flash - optimized for boot code execution, firmware storage, and secure parameter retention in harsh environments.
FAQ
What is the maximum operating temperature range for S29GL512T13TFNV13?
This part is qualified for the industrial temperature range of –40°C to +85°C. It uses the VBU BGA package and meets all electrical and timing specifications across this full range, including 100 ns random access time and 100,000 program/erase cycles. No derating is required within these limits.
Does S29GL512T13TFNV13 support both ×8 and ×16 data bus configurations?
Yes - it supports both modes via the BYTE# pin and A0 address line. In ×16 mode, DQ0–DQ15 transfer 16 bits per cycle; in ×8 mode, only DQ0–DQ7 are active with A0 ignored for addressing. The versatile I/O feature allows VIO to be set independently from VCC, enabling compatibility with 1.8 V or 3.3 V hosts.
How does the hardware ECC function in normal operation?
Hardware ECC operates transparently during all write and read operations. On write, the device calculates and stores a 12-bit ECC code per 512-byte sector. On read, it checks and corrects any single-bit error in real time without CPU intervention or additional latency - no software driver or external logic is needed.
Can the OTP array be reprogrammed after initial programming?
No - the 2048-byte OTP array is permanently programmable. Four SSR regions (SSR0–SSR3) can be individually locked; SSR0 is factory-locked and cannot be unlocked. SSR3 supports password-based read protection, preventing unauthorized access to stored keys or calibration data after final programming.
S29GL512T13TFNV13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 56-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 130 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 56-TSOP
S29GL512T13TFNV13 FAQ
1.How can I place an order for S29GL512T13TFNV13 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T13TFNV13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T13TFNV13 reliable?
The price and inventory of S29GL512T13TFNV13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T13TFNV13 is usually 5 days.
3.What payment methods are accepted for S29GL512T13TFNV13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T13TFNV13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T13TFNV13?
S29GL512T13TFNV13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T13TFNV13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T13TFNV13?
For technical support, including S29GL512T13TFNV13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T13TFNV13 requirements.
6.How does Aetrix verify that S29GL512T13TFNV13 is sourced from the original manufacturer or authorized distributors?
All S29GL512T13TFNV13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T13TFNV13 meets industry standards.
7.What is the process for return or replacement of S29GL512T13TFNV13?
All S29GL512T13TFNV13 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T13TFNV13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T13TFNV13 part is unused and in its original packaging.
Return procedure for S29GL512T13TFNV13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T13TFNV13 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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