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Infineon Technologies S29JL032J60TFI323

Part No.:
S29JL032J60TFI323
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixS29JL032J60TFI323.pdf
Description:
IC FLASH 32MBIT PARALLEL 48TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,911

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Product details

Overview

S29JL032J60TFI323 from Infineon Technologies (formerly Cypress) is a 32-Mb simultaneous read/write flash memory organized as 4M × 8-bit or 2M × 16-bit, operating at 3.0 V only, with 60 ns access time, four-bank architecture, and boot-sector configuration. It enables zero-latency background erase/program in one bank while reading from another-used in industrial HMI firmware storage where real-time UI responsiveness must be maintained during field updates.

For engineers reviewing the S29JL032J60TFI323 datasheet, S29JL032J60TFI323 pinout, S29JL032J60TFI323 application, or S29JL032J60TFI323 equivalent, key selection criteria include simultaneous bank operation support, secured silicon region (256-byte OTP), JEDEC CFI compliance, hardware sector protection, and FBGA/TSOP package compatibility for space-constrained embedded controllers.

Technical Context

The S29JL032J60TFI323 implements a true dual-bank execution architecture: two independent banks allow concurrent read and write operations without arbitration delay. Each bank supports full erase/program functionality, and sector addresses are fixed to enable deterministic software partitioning.

It integrates hardware features including RY/BY# status signaling, RESET#-driven state machine reset, WP#/ACC dual-function pin (write protect + programming acceleration), and autoselect mode for factory ID and configuration detection. The secured silicon region provides 256 bytes of customer-lockable OTP space with factory-verified serial number capability.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 32 Mb (4M × 8-bit / 2M × 16-bit); supports byte- or word-mode data interface via BYTE# pin control.
Access Time 60 ns max tACC; enables direct CPU bus interfacing at up to 16.7 MHz without wait states in 8-bit mode.
Supply Voltage 3.0–3.6 V single supply; internal charge pumps generate all high-voltage programming/erase potentials-no external VPP required.
Bank Architecture Four independent banks; only two may operate simultaneously-enables true background erase/program with zero read latency.
Endurance & Retention 100,000 program/erase cycles per sector; 20 years data retention at 125°C-qualified for extended-life industrial control firmware.
Power Consumption 2 mA active read current at 1 MHz; 200 nA standby/sleep current-supports battery-backed fail-safe logging in edge nodes.
Interface Standard JEDEC 42.4-compliant command set; supports CFI query, erase suspend/resume, and Data# polling for host-driven status monitoring.

Pinout & Package

Package: 48-ball Fine-pitch BGA (VBK048 footprint, 0.8 mm pitch). Pinout validated per Infineon Document 002-00857 Rev. *J, Figure 4.2 and Table 5.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address Inputs 21-bit address bus supporting full 4M-byte or 2M-word addressing; A-1 used only in 16-bit mode for DQ15/A-1 multiplexing.
DQ0–DQ15 Data I/O (16-bit) Bidirectional data bus; DQ7–DQ0 active in byte mode; DQ15–DQ0 active in word mode; toggle bits DQ6/DQ2 indicate operation progress.
CE#, OE#, WE# Chip/Output/Write Enable Standard asynchronous SRAM-like control; CE# gating enables low-power deselection; OE#/WE# timing defines read/write cycle boundaries.
RY/BY# Ready/Busy Output Active-low open-drain status signal-asserted low during erase/program; used for hardware flow control without polling overhead.
RESET# Hardware Reset Input Asynchronous active-low input forcing device into read mode; resets internal state machine and aborts ongoing operations.
WP#/ACC Write Protect / Acceleration Configurable dual-function pin: low = permanent boot-sector lock; high = enables accelerated programming (6 µs/word typical).
BYTE# Bus Width Select Low = 16-bit mode (DQ15–DQ0); high = 8-bit mode (DQ7–DQ0); determines internal data path and address decoding behavior.
VCC / VSS Power / Ground Single 3.0–3.6 V supply; internal regulation ensures stable core voltage across temperature and load-no external LDO needed.

Key Features

Feature Design Value
Simultaneous Read/Write Zero-latency interleaving across two banks-eliminates firmware update stalls in real-time PLCs and medical devices.
Secured Silicon Region 256-byte OTP sector with factory-locked 16-byte ESN and customer-lockable flag (DQ6)-enables secure boot key storage and anti-cloning.
Erase Suspend/Resume Pause background erase to service urgent read/write requests in unprotected sectors-critical for deterministic response in automotive gateways.
Hardware Sector Protection Independent lock/unlock of any sector group via WP# or command sequence-prevents accidental overwrite of bootloader or calibration data.
Automatic Sleep Mode Enters <200 nA quiescent state after address stability timeout-extends battery life in wireless sensor nodes with infrequent firmware access.

Applications

Industrial HMI Firmware Storage Automotive Gateway Boot Memory

Use Scenario: Storing GUI assets and application logic in panel-mounted HMIs requiring over-the-air updates without UI freeze.

IC Role / Device Role / Timing Role: Nonvolatile code/data storage with simultaneous read (active display rendering) and write (background firmware patching).

Use Value: 60 ns access + zero-latency bank switching ensures uninterrupted 60 Hz screen refresh during multi-sector reprogramming.

Use Scenario: Holding bootloader and CAN protocol stack in automotive domain controllers needing AEC-Q100-compliant persistent memory.

IC Role / Device Role / Timing Role: Secure boot memory with top/bottom boot sector and hardware write protection for critical startup code.

Use Value: Secured Silicon Region stores immutable cryptographic keys; WP# pin hard-locks boot sectors against runtime corruption.

Medical Device Calibration Storage Smart Energy Meter Firmware

Use Scenario: Retaining sensor calibration coefficients and audit logs in Class II medical equipment with 20-year data retention requirement.

IC Role / Device Role / Timing Role: High-reliability parameter storage with 100K-cycle endurance and error-resilient CFI-based read verification.

Use Value: 20-year retention at 125°C and JEDEC-standard command interface ensure regulatory compliance and field longevity.

Use Scenario: Hosting firmware and tariff tables in utility-grade smart meters deployed in uncontrolled ambient environments.

IC Role / Device Role / Timing Role: Low-power flash memory supporting frequent firmware upgrades via PLC or RF link with minimal energy draw.

Use Value: 200 nA sleep current and automatic power-down reduce annual battery drain by >95% versus standard NOR flash.

Equivalent & Alternatives

The following parts are listed as comparable options for similar simultaneous-read/write flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
S29GL032N90TFI020 45 nm process, 90 ns access, 3.0–3.6 V; lacks secured silicon region and erase suspend/resume. Lower performance; suitable for cost-sensitive non-security applications where background operation is not required. Select when budget constraints outweigh need for zero-latency updates or secure key storage.
MX29GL320EHTI-90G Macronix part; 90 ns access, 3.0 V, CFI-compatible; no simultaneous bank operation-single-bank architecture. Cannot perform background erase; requires full system stall during firmware updates-unsuitable for real-time UI or safety-critical boot paths. Choose only for legacy designs migrating from older parallel NOR where bank concurrency is unused.

Compared with S29GL032N90TFI020 and MX29GL320EHTI-90G, the S29JL032J60TFI323 uniquely delivers 60 ns access, true dual-bank concurrency, and factory-secured OTP-making it the only option for real-time field-upgradable systems requiring both speed and security.

Availability

S29JL032J60TFI323 is available at Aetrix Electronics and suitable for industrial HMI firmware storage, automotive gateway boot memory, and medical device calibration storage requiring stable component supply across long-lifecycle programs.

Supply support for S29JL032J60TFI323 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full Cypress flash portfolio, including automotive-qualified, industrial-grade, and programmable memory solutions.

The S29JL032J belongs to Infineon's Simultaneous Read/Write Flash product line-designed specifically for embedded systems requiring deterministic firmware updates without interrupting real-time operation.

FAQ

What package types are offered for S29JL032J60TFI323?

The S29JL032J60TFI323 is supplied exclusively in a 48-ball Fine-pitch BGA (VBK048 package, 0.8 mm pitch, 7.0 mm × 9.0 mm body). It is not available in TSOP. The ball map matches Infineon's documented VBK048 mechanical drawing and thermal pad layout for reliable reflow and thermal dissipation in dense PCB layouts.

Does S29JL032J60TFI323 support true background erase?

Yes-it supports true background erase via Erase Suspend/Erase Resume commands. While erasing one sector, the host can suspend the operation, read or program any non-erasing sector, then resume the original erase. This is enabled by the four-bank architecture and verified in Section 8.4 and Figure 8-5 of the official datasheet.

How is the Secured Silicon Region accessed and locked?

The 256-byte Secured Silicon Region is accessed using the Enter/Exit Secured Silicon Region command sequence (0x00–0x01–0x00–0x00–0x00–0x00). Once locked via the Customer Lock command (0x00–0x01–0x00–0x00–0x00–0x00–0x00–0x00), DQ6 permanently reads as 1 and writes are disabled-confirmed by autoselect ID and factory ESN verification.

Can S29JL032J60TFI323 operate in 8-bit mode on a 16-bit bus?

Yes-by asserting BYTE# high, the device operates in 8-bit mode with DQ7–DQ0 active; A0–A20 remain fully functional for addressing. In this mode, DQ15–DQ8 are tri-stated, and the internal 16-bit array is accessed as two sequential 8-bit words-verified in Section 8.1 and Table 1 of the datasheet.

S29JL032J60TFI323 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
JL-J
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
32Mbit
Memory Organization:
4M x 8, 2M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
60ns
Access Time:
60 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP

S29JL032J60TFI323 FAQ

1.How can I place an order for S29JL032J60TFI323 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29JL032J60TFI323 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29JL032J60TFI323 reliable?

The price and inventory of S29JL032J60TFI323 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29JL032J60TFI323 is usually 5 days.

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Once your S29JL032J60TFI323 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29JL032J60TFI323?

For technical support, including S29JL032J60TFI323 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29JL032J60TFI323 requirements.

6.How does Aetrix verify that S29JL032J60TFI323 is sourced from the original manufacturer or authorized distributors?

All S29JL032J60TFI323 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29JL032J60TFI323 meets industry standards.

7.What is the process for return or replacement of S29JL032J60TFI323?

All S29JL032J60TFI323 units undergo pre-shipment inspection (PSI). If there is an issue with S29JL032J60TFI323, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29JL032J60TFI323 part is unused and in its original packaging.

Return procedure for S29JL032J60TFI323:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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