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Infineon Technologies S29PL064J60BFW123

Part No.:
S29PL064J60BFW123
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixS29PL064J60BFW123.pdf
Description:
IC FLASH 64MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,463

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Product details

Overview

S29PL064J60BFW123 from Infineon Technologies (formerly Cypress) is a 64-Mbit (4 Mword × 16-bit) 3.0 V-only Page Mode Flash memory with Simultaneous Read/Write capability, FlexBank architecture, and Enhanced VersatileI/O™ supporting 3 V I/O. It features 4 independent banks (A–D), 8-word page size, 20 ns page access time, and operates across 2.7–3.6 V for battery-powered embedded systems requiring nonvolatile code/data storage with in-system reprogrammability.

For engineers reviewing the S29PL064J60BFW123 datasheet, S29PL064J60BFW123 pinout, S29PL064J60BFW123 application, or S29PL064J60BFW123 equivalent, key selection criteria include bank-level concurrent read/write operation, persistent/password sector protection, CFI compliance, 1 million erase/program cycles, and 48-ball Fine-pitch BGA (VBK048) package compatibility.

Technical Context

This device implements a FlexBank architecture with four physically separate banks (A–D), enabling true simultaneous read from one bank while erasing or programming another-eliminating latency between operations. Each bank supports independent command execution, and bank boundaries are fixed per part variant: Bank A = 8 Mbit, Bank B = 24 Mbit, Bank C = 24 Mbit, Bank D = 8 Mbit for S29PL064J.

Enhanced VersatileI/O™ fixes all I/O and control pin voltage tolerance and output swing to the VIO pin level (3 V for this part), decoupling interface signaling from core VCC. Sector protection includes both persistent (PPB-based) and password-secured modes, with up to 128-word Secured Silicon Sector accessible via command sequence.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density64 Mbit (4 Mwords × 16-bit data bus)
Supply Voltage Range2.7–3.6 V - enables direct integration into 3 V battery-powered systems without level-shifting
Page Access Time20 ns - enables fast burst reads within 8-word pages for boot code or firmware hot loops
Erase/Program Endurance1 million cycles per sector - supports field firmware updates over product lifetime
Data Retention20 years typical - ensures long-term reliability in industrial and automotive applications
Package8.15 mm × 6.15 mm, 48-ball Fine-pitch BGA (VBK048) - compact footprint for space-constrained PCBs
VIO Level3 V - defines I/O voltage tolerance and output drive strength for all control and data pins

Pinout & Package

Package: 48-ball Fine-pitch Ball Grid Array (VBK048), 8.15 mm × 6.15 mm body, 0.5 mm pitch, bottom-side thermal pad.

Pin/TerminalCircuit RoleDesign Meaning
A0–A21Address Inputs22-bit address bus supporting full 4 Mword addressing; A0 selects LSB of 16-bit word
DQ0–DQ15Data I/O16-bit bidirectional data bus; direction controlled by CE#, OE#, and WE# timing
CE#Chip EnableActive-low chip select; device enters standby when high; controls power state entry/exit
OE#Output EnableActive-low read strobe; gates output drivers; used with CE# and WE# to define bus cycle type
WE#Write EnableActive-low write strobe; latches addresses and data during command sequences and programming
RY/BY#Ready/Busy OutputOpen-drain status indicator; low during erase/program; enables hardware polling without software overhead
RESET#Hardware ResetActive-low asynchronous reset; forces device into reading array mode and aborts ongoing operations
WP#/ACCWrite Protect/AccelerationTriple-function pin: VIL = hardware sector lock; VIH = unlock; VHH = factory accelerated programming
VIOI/O Voltage ReferenceDefines voltage level for all I/O and control pin thresholds and output drive - set to 3 V for this part

Key Features

FeatureDesign Value
Simultaneous Read/WriteTwo concurrent operations across separate banks - eliminates CPU wait states during firmware update
FlexBank ArchitectureFour independent banks (A–D) with fixed sector mapping - enables partitioned code/data storage and atomic updates
Enhanced VersatileI/O™VIO-referenced I/O - simplifies interface design by eliminating external level shifters in 3 V systems
CFI ComplianceJEDEC JESD68-compliant interface - enables automatic flash detection and configuration in bootloader environments
Password Sector Protection64-bit user-defined password - provides secure, in-system locking of critical sectors against unauthorized modification

Applications

Industrial PLC Firmware StorageAutomotive ADAS Boot Memory

Use Scenario: Storing firmware and configuration data in programmable logic controllers operating in harsh temperature and EMI environments.

IC Role / Device Role / Timing Role: Nonvolatile code storage with in-system reprogrammability and hardware sector protection against accidental overwrite.

Use Value: Persistent sector protection and 20-year data retention ensure firmware integrity across 15+ year product lifecycles without maintenance.

Use Scenario: Holding boot code and safety-critical calibration data for radar and camera processing units in ISO 26262-compliant ADAS ECUs.

IC Role / Device Role / Timing Role: Secure, fast-access boot memory with password-protected sectors for ASIL-B functional safety partitions.

Use Value: Password sector protection prevents unauthorized firmware modification; 20 ns page access accelerates boot time under strict timing constraints.

Medical Imaging System ConfigurationNetworking Equipment Image Backup

Use Scenario: Storing calibrated sensor profiles and regulatory-compliant operational parameters in portable ultrasound and MRI subsystems.

IC Role / Device Role / Timing Role: Tamper-resistant parameter storage with Secured Silicon Sector for FDA-regulated calibration data.

Use Value: Up to 128-word Secured Silicon Sector allows storage of cryptographic keys and calibration constants inaccessible via standard command interface.

Use Scenario: Maintaining redundant firmware images and configuration snapshots in enterprise switches and routers with zero-downtime upgrade capability.

IC Role / Device Role / Timing Role: Dual-bank concurrent operation enables background image validation while serving live traffic from active bank.

Use Value: Simultaneous Read/Write allows seamless failover and rollback without service interruption during firmware deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
S29GL064S90TFI02064 Mbit, 3 V, 90 ns random access, no Simultaneous Read/Write, CFI-compliantLacks FlexBank concurrency; suitable for simpler boot-only use casesSelect when lower cost and absence of concurrent operation is acceptable
MX29GL640EHTI-90G64 Mbit, 3 V, 90 ns random access, no password protection, no Secured Silicon SectorMissing advanced security features; lacks VIO flexibility and bank concurrencyChoose only for legacy designs where JEDEC command compatibility suffices and security is not required

Compared with S29GL064S90TFI020 and MX29GL640EHTI-90G, the S29PL064J60BFW123 uniquely delivers bank-level concurrency, password-secured sectors, and VIO-referenced I/O-enabling faster boot, safer field updates, and simplified interface design in next-generation embedded systems.

Availability

S29PL064J60BFW123 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system configuration requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for S29PL064J60BFW123 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and secure nonvolatile memory solutions.

The S29PL-J family was developed by Cypress (acquired by Infineon in 2020) to deliver high-reliability, multi-bank Flash memory for real-time embedded systems requiring concurrent code execution and secure firmware updates.

FAQ

Does S29PL064J60BFW123 support true simultaneous read and write operations?

Yes. The device implements FlexBank architecture with four independent banks (A–D), allowing concurrent read from one bank while erasing or programming another. This zero-latency switching is confirmed in the datasheet's Simultaneous Read/Write Operation section and verified by timing diagrams on pages 65–67.

What is the function of the VIO pin on S29PL064J60BFW123?

The VIO pin sets the voltage reference for all I/O and control pin thresholds and output drive strength. For this part, VIO must be tied to 3 V, defining compatible logic levels and eliminating need for external level shifters in 3 V systems - distinct from core VCC which powers internal charge pumps.

How many sectors can be protected using password sector protection?

Password sector protection applies to any combination of individual sectors or sector groups across the entire 64 Mbit array. The 64-bit user-defined password unlocks protected regions; up to 128 words in the Secured Silicon Sector store password-related metadata, but sector count itself is unrestricted per datasheet Section 13.

Is the Secured Silicon Sector accessible after power-on reset?

No. The Secured Silicon Sector is disabled by default and requires explicit entry via the Enter Secured Silicon Sector command sequence (documented in Section 15.4). Access is gated by command timing and state-machine conditions-not automatically enabled at power-up or reset.

S29PL064J60BFW123 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
PL-J
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
64Mbit
Memory Organization:
4M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
60ns
Access Time:
60 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-25°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (8.15x6.15)

S29PL064J60BFW123 FAQ

1.How can I place an order for S29PL064J60BFW123 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29PL064J60BFW123 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29PL064J60BFW123 reliable?

The price and inventory of S29PL064J60BFW123 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29PL064J60BFW123 is usually 5 days.

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S29PL064J60BFW123 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29PL064J60BFW123 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29PL064J60BFW123?

For technical support, including S29PL064J60BFW123 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29PL064J60BFW123 requirements.

6.How does Aetrix verify that S29PL064J60BFW123 is sourced from the original manufacturer or authorized distributors?

All S29PL064J60BFW123 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29PL064J60BFW123 meets industry standards.

7.What is the process for return or replacement of S29PL064J60BFW123?

All S29PL064J60BFW123 units undergo pre-shipment inspection (PSI). If there is an issue with S29PL064J60BFW123, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29PL064J60BFW123 part is unused and in its original packaging.

Return procedure for S29PL064J60BFW123:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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