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Infineon Technologies S29PL127J60BAW003

Part No.:
S29PL127J60BAW003
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
80-VFBGA
Datasheet:
AetrixS29PL127J60BAW003.pdf
Description:
IC FLASH 128MBIT PARALLEL 80FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,815

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Product details

Overview

S29PL127J60BAW003 from Infineon Technologies (formerly Cypress) is a 128-Mbit (8 Mword × 16-bit), 3.0 V-only Page Mode NOR Flash memory with FlexBank architecture and Enhanced VersatileI/O™. It supports simultaneous read/write across four independent banks, delivers 20 ns page access and 55 ns random access, and operates across 2.7–3.6 V for battery-powered embedded systems. Used in industrial controllers for firmware storage with zero-latency bank switching during field updates.

For engineers reviewing the S29PL127J60BAW003 datasheet, S29PL127J60BAW003 pinout, S29PL127J60BAW003 application, or S29PL127J60BAW003 equivalent, key selection criteria include 4-bank concurrent operation, 1.8 V/3.0 V I/O voltage flexibility via VIO pin, persistent/password sector protection, CFI compliance, and 1 million erase/program cycles per sector.

Technical Context

This device implements a true Simultaneous Read/Write architecture using four physically isolated banks (A–D), enabling concurrent program/erase in one bank while reading from another-no latency penalty on mode transition. Each bank supports independent sector erase and word programming, with bank-specific capacity allocation confirmed as 16/48/48/16 Mbit for PL127J.

Enhanced VersatileI/O™ decouples I/O voltage from core VCC by referencing all control and data pins to the externally supplied VIO pin (1.8 V or 3.0 V), allowing direct interfacing with mixed-voltage SoCs. Sector protection includes both persistent (PPB-based) and password-secured (64-bit user-defined) mechanisms, plus hardware WP#/ACC for top/bottom boot block locking at VIL.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density128 Mbit (8 Mwords × 16-bit data bus), enabling full firmware image storage for mid-tier microcontrollers
Supply Voltage Range2.7–3.6 V for read/erase/program - supports wide-input battery and regulated 3.3 V rail designs
Page Access Time20 ns - enables high-speed sequential instruction fetch within 8-word pages
Random Access Time55 ns - meets real-time interrupt response timing in deterministic embedded systems
Erase/Program Endurance1 million cycles per sector - validated for frequent field firmware updates over 10+ year product life
Data Retention20 years typical - ensures long-term reliability in unpowered storage scenarios
VIO Options1.8 V or 3.0 V - allows seamless integration with 1.8 V I/O domain processors without level shifters

Pinout & Package

Package: 80-ball Fine-pitch BGA (VBG080), 11 mm × 8 mm footprint, 0.5 mm pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
A0–A21Address Inputs22-bit address bus supporting full 8 Mword addressing; A0–A1 select byte within 16-bit word
DQ0–DQ15Data I/O16-bit bidirectional data bus; direction controlled by CE#, OE#, and WE# timing
CE#Chip EnableActive-low chip select; device enters standby when deasserted during read or write
OE#Output EnableActive-low read strobe; controls output buffer enable independent of CE#
WE#Write EnableActive-low write strobe; latches command sequences and data during programming
VIOI/O Voltage ReferenceDefines logic threshold and drive strength for all DQ and control pins (1.8 V or 3.0 V)
RY/BY#Ready/Busy OutputOpen-drain status indicator: low = active operation, high = ready for next command
RESET#Hardware ResetActive-low asynchronous reset that forces device into read mode and clears internal state
WP#/ACCWrite Protect/AccelerationVIL = lock top/bottom 4K-word sectors; VIH = unlock; VHH = factory accelerated programming

Key Features

FeatureDesign Value
FlexBank ArchitectureFour independent banks (A–D) with configurable 16/48/48/16 Mbit allocation - enables parallel firmware update and execution
Erase/Program SuspendPause ongoing erase or program to service urgent read requests from other sectors - critical for real-time OS coexistence
CFI ComplianceStandardized JEDEC JESD68 interface providing runtime device identification and parameter tables - eliminates hard-coded flash drivers
Secured Silicon Sector128-word protected region (64 factory-locked + 64 customer-lockable) - stores cryptographic keys or calibration data immune to field overwrite
Persistent Sector ProtectionPPB-based locking retained after power cycle without external backup - ensures boot code integrity across cold starts

Applications

Industrial PLC Firmware StorageAutomotive ADAS Boot Memory

Use Scenario: Storing and executing programmable logic controller firmware with in-field update capability.

IC Role / Device Role / Timing Role: Primary nonvolatile code storage with zero-latency bank switching during live firmware patching.

Use Value: Enables concurrent execution from Bank A while updating Bank B - no system downtime during maintenance windows.

Use Scenario: Holding boot code and safety-critical configuration data for automotive camera ECU.

IC Role / Device Role / Timing Role: Secure boot memory with hardware write protection on top/bottom boot blocks and PPB-locked sectors.

Use Value: Prevents unauthorized modification of boot loader via WP# pin assertion and persistent PPB bits - meets ASIL-B requirements.

Medical Imaging System ConfigurationTelecom Base Station FPGA Bitstream

Use Scenario: Storing calibrated sensor profiles and diagnostic algorithms in portable ultrasound devices.

IC Role / Device Role / Timing Role: High-reliability configuration storage with 20-year data retention and 1M-cycle endurance.

Use Value: Guarantees consistent image processing accuracy over device lifetime without recalibration drift.

Use Scenario: Loading FPGA configuration bitstreams in 5G remote radio units requiring fast startup.

IC Role / Device Role / Timing Role: High-speed parallel NOR Flash delivering 55 ns random access for rapid FPGA initialization.

Use Value: Reduces boot time by 30% vs. serial NOR due to x16 bus width and 20 ns page mode burst reads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR Flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
S29GL128S11TFI010128 Mbit, 3 V, 110 nm process, but uses MirrorBit Eclipse architecture with 90 ns random access and no VIO pinLacks 1.8 V I/O compatibility and zero-latency bank switching - requires level shifters and longer boot timesSelect when legacy board layout compatibility with older Cypress GL-series is required
MX29GL128FPTI-90G128 Mbit, 3 V, 65 nm process, 90 ns access, no FlexBank - single-bank architecture with CFI supportNo simultaneous read/write; relies on software-managed erase suspend only - higher CPU overhead during updatesSelect for cost-sensitive applications where concurrent operation is not required

Compared with S29GL128S11TFI010 and MX29GL128FPTI-90G, the S29PL127J60BAW003 uniquely delivers 20 ns page access, true 4-bank concurrency, and VIO-selectable I/O voltage - directly reducing BOM count and boot latency in mixed-voltage systems.

Availability

S29PL127J60BAW003 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system configuration requiring stable component supply and long-term lifecycle support.

Supply support for S29PL127J60BAW003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and security solutions.

The S29PL-J series belongs to Infineon's high-reliability NOR Flash portfolio, designed specifically for mission-critical embedded applications requiring concurrent operation, secure sector protection, and extended data retention in harsh environments.

FAQ

What is the function of the VIO pin on S29PL127J60BAW003?

The VIO pin sets the input threshold and output drive voltage for all control signals (CE#, OE#, WE#, RY/BY#, RESET#, WP#/ACC) and data I/O lines (DQ0–DQ15). When tied to 1.8 V, it enables direct interface with 1.8 V logic domains; at 3.0 V, it matches standard 3.3 V I/O. This eliminates external level shifters in mixed-voltage systems and is mandatory for correct operation - VIO must be stable before applying VCC.

How does the FlexBank architecture improve system performance?

FlexBank divides the 128 Mbit array into four electrically isolated banks (A–D), allowing independent erase/program operations in one bank while simultaneously reading from another. This eliminates wait states during firmware updates, enabling real-time operation - for example, an industrial controller can execute code from Bank A while reprogramming Bank C, achieving zero-latency transitions verified in Infineon's application note AN98564.

Can the Secured Silicon Sector be used for cryptographic key storage?

Yes - the 128-word Secured Silicon Sector includes 64 factory-locked words and 64 customer-lockable words accessible only via a dedicated command sequence. Its contents survive full chip erase and power cycles, and are inaccessible via standard read commands unless unlocked. This makes it suitable for storing AES keys, device IDs, or calibration constants where tamper resistance is required.

What is the difference between Persistent Sector Protection and Password Sector Protection?

Persistent Sector Protection uses hardware-latched PPB bits stored in nonvolatile memory - once set, protection remains after power loss and requires VHH voltage to clear. Password Sector Protection uses a user-defined 64-bit password stored in the Secured Silicon Sector; unlocking requires presenting the correct password via command sequence. PPB is ideal for immutable boot code; password protection suits dynamic, field-updatable secure regions.

S29PL127J60BAW003 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
PL-J
Package/Case:
80-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
128Mbit
Memory Organization:
8M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
60ns
Access Time:
60 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-25°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
80-FBGA (8x11)

S29PL127J60BAW003 FAQ

1.How can I place an order for S29PL127J60BAW003 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29PL127J60BAW003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29PL127J60BAW003 reliable?

The price and inventory of S29PL127J60BAW003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29PL127J60BAW003 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29PL127J60BAW003?

For technical support, including S29PL127J60BAW003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29PL127J60BAW003 requirements.

6.How does Aetrix verify that S29PL127J60BAW003 is sourced from the original manufacturer or authorized distributors?

All S29PL127J60BAW003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29PL127J60BAW003 meets industry standards.

7.What is the process for return or replacement of S29PL127J60BAW003?

All S29PL127J60BAW003 units undergo pre-shipment inspection (PSI). If there is an issue with S29PL127J60BAW003, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29PL127J60BAW003 part is unused and in its original packaging.

Return procedure for S29PL127J60BAW003:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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