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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S29WS128P0PBAW000

Name: S29WS128P0PBAW000
Brand: Infineon Technologies
SKU: S29WS128P0PBAW000
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S29WS128P0PBAW000

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 84-VFBGA

Datasheet:: S29WS128P0PBAW000.pdf

Description:: IC FLASH 128MBIT PARALLEL 84FBGA

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Product details

Overview

S29WS128P0PBAW000 from Cypress Semiconductor is a 128 Mb (8 M × 16-bit) 1.8 V simultaneous read/write NOR Flash memory using 90 nm MirrorBit™ technology, supporting zero-latency concurrent operations across two independent banks, with 104 MHz burst read capability and hardware write protection on top/bottom sectors - deployed in wireless baseband processors for firmware storage and real-time code execution.

For engineers reviewing the S29WS128P0PBAW000 datasheet, S29WS128P0PBAW000 pinout, S29WS128P0PBAW000 application, or S29WS128P0PBAW000 equivalent, key selection criteria include simultaneous bank operation support, 1.7–1.95 V single-supply operation, 64-byte write buffer efficiency, CFI compliance, and FBGA-84 package compatibility with MCP footprint requirements.

Technical Context

This device implements a sixteen-bank architecture with 126 × 64 Kword main sectors plus four 16 Kword boot sectors at top and bottom, enabling dual-boot configuration and sector-level erase granularity. Its command set adheres to JEDEC 42.4 standards and supports both synchronous burst and asynchronous read modes.

Simultaneous Read/Write operation relies on physically separate address/data paths per bank and handshaking via RDY output; internal acceleration is enabled by ACC pin at V_HH, reducing factory programming time while maintaining full software reset and suspend/resume functionality for program/erase cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	128 Mb (8 M × 16-bit), mapped as A22–A0 address space
Supply Voltage	1.70–1.95 V single VCC/VCCQ rail, ramped simultaneously
Burst Read Speed	104 MHz max, with 7.6 ns tBACC for continuous burst access
Write Buffer Size	64-byte (32-word) buffer enabling efficient page programming
Endurance & Retention	100,000 program/erase cycles per sector; 20-year data retention (typical)
Access Modes	Asynchronous, page mode (20 ns intra-page), synchronous burst, and linear/continuous burst with wrap-around
Protection Features	Hardware WP# lock, persistent/password Advanced Sector Protection, and Secured Silicon Sector (128-word factory + 128-word customer)

Pinout & Package

Package: 84-ball Fine-Pitch BGA (VBH084), 11.6 mm × 8 mm, lead-free (Pb-free), MCP-compatible footprint with balls arranged in 12×10 matrix (MD=12, ME=10). Ball pitch = 0.80 mm; ball diameter = 0.33–0.43 mm.

Pin/Terminal	Circuit Role	Design Meaning
A22–A0	Address Inputs	23-bit address bus (A22 LSB to A0); A22 only active in 128P configuration
DQ15–DQ0	Data I/O	16-bit bidirectional data bus; supports byte-wide access via DQM control in burst mode
CE#, OE#, WE#	Chip/Output/Write Enable	Asynchronous control signals; CE# enables device, OE# gates output drivers, WE# controls write latching
RDY	Status Output	Open-drain ready signal indicating valid burst data availability or operation completion
CLK	Clock Input	Drives synchronous burst counter; ignored in asynchronous mode but must be held VIH/VIL
AVD#	Address Valid Strobe	Latches starting address on falling edge in burst mode; validates address in async mode when low
WP#, ACC, RESET#	Control Inputs	WP# disables top/bottom sector writes; ACC at VHH accelerates programming; RESET# forces hardware reset
VCC / VCCQ / VSS	Power Supplies	VCC powers core logic; VCCQ powers I/O; both must ramp together; VSS is common ground reference

Key Features

Feature	Design Value
Simultaneous Read/Write	Zero-latency concurrent access across two independent banks using separate address/data paths
Write Buffer Efficiency	64-byte buffer reduces effective word programming time to 6 µs (VACC) or 9.4 µs (VCC)
Dual Boot Sector Architecture	Four 16 Kword sectors at top and bottom enable fail-safe firmware recovery and field-upgradable boot code
Advanced Sector Protection	Persistent lock bits + password method prevent unauthorized program/erase without explicit unlock sequence
CFI Compliance	Common Flash Interface support enables standardized host driver development and automatic device identification

Applications

Wireless Baseband Processor Firmware Storage

Industrial PLC Program Memory

Use Scenario: Storing boot code and runtime firmware in LTE/5G baseband SoCs where rapid code fetch and in-field updates are required.

IC Role / Device Role / Timing Role: Primary non-volatile code storage with simultaneous read-from-one-bank while writing-to-another-bank to avoid pipeline stalls.

Use Value: Eliminates wait states during over-the-air (OTA) firmware patching, sustaining 104 MHz burst reads during background sector erase.

Use Scenario: Holding ladder logic and motion control algorithms in programmable logic controllers operating in harsh industrial environments.

IC Role / Device Role / Timing Role: Reliable program memory with hardware write protection (WP#) and 20-year data retention under thermal cycling.

Use Value: Prevents accidental corruption of critical control code via top/bottom sector locking and 100K-cycle endurance per sector.

Automotive Infotainment Boot ROM

Medical Imaging System Configuration Storage

Use Scenario: Secure boot image storage in automotive head units requiring AEC-Q100-compliant flash with dual-boot redundancy.

IC Role / Device Role / Timing Role: Dual-boot flash with factory-secured silicon sector storing cryptographic keys and calibration data.

Use Value: Enables secure boot verification and failsafe fallback to known-good firmware after failed update attempts.

Use Scenario: Storing FPGA configuration bitstreams and sensor calibration tables in portable ultrasound and MRI subsystems.

IC Role / Device Role / Timing Role: High-reliability non-volatile storage with CFI interface for automated field reconfiguration and regulatory traceability.

Use Value: Supports FDA-required audit trails via Secured Silicon Sector (customer portion) for calibration timestamping and version control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar simultaneous-read/write NOR flash applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL128S11TFI010	128 Mb, 3.0 V supply, no simultaneous read/write; uses older 110 nm process	Lacks zero-latency concurrent operation; requires voltage translation in 1.8 V systems	Select only if legacy 3.0 V design constraints prohibit 1.8 V migration
MX29GL128FPTI-90G	128 Mb, 1.8 V, but asynchronous-only; no burst clock or RDY handshaking	No synchronous burst mode or bank concurrency; slower effective throughput in high-speed code fetch	Choose when cost sensitivity outweighs performance needs and CFI is not required

Compared with S29WS128P0PBAW000, the S29GL128S11TFI010 trades simultaneous operation for higher voltage tolerance, while MX29GL128FPTI-90G sacrifices burst timing and RDY signaling for lower unit cost - neither matches the zero-latency dual-bank execution essential for real-time wireless firmware.

Availability

S29WS128P0PBAW000 is available at Aetrix Electronics and suitable for wireless infrastructure, industrial automation, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and Pb-free RoHS-compliant packaging.

Supply support for S29WS128P0PBAW000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded and connectivity applications.

The S29WS-P series targets wireless and portable electronics needing high-density, low-voltage NOR flash with concurrent operation - optimized for baseband processors, modems, and systems demanding fast code execution and robust field-upgrade capability.

FAQ

What is the function of the ACC pin on S29WS128P0PBAW000?

The ACC (Acceleration) pin operates at V_HH (typically 3.0 V) to accelerate factory programming speed and automatically enter Unlock Bypass mode, reducing single-word programming time to 40 µs. When held at VIL, it disables all program and erase functions. It must be at VIH during normal operation and is not used in standard system-level programming.

Does S29WS128P0PBAW000 support true simultaneous read and write across different memory banks?

Yes - the device features a sixteen-bank architecture with two independent data/address paths, allowing zero-latency concurrent read from one bank while programming or erasing another. This is confirmed by the block diagram showing separate X/Y-decoders per bank and RDY-based handshaking for operation synchronization.

How does hardware write protection (WP#) work on this device?

WP# at VIL disables program and erase operations exclusively in the four outermost 16 Kword sectors (two at top, two at bottom), leaving all other sectors fully writable. This provides physical-level protection for boot code without requiring software commands, and remains active regardless of power cycling or reset events.

Is the S29WS128P0PBAW000 compatible with standard NOR flash controllers?

Yes - it implements the JEDEC 42.4 command set and Common Flash Interface (CFI), enabling plug-and-play compatibility with industry-standard flash controllers and BIOS/UEFI firmware stacks. The CFI query table is accessible via standard address/command sequences and reports device geometry, timing, and protection features.

S29WS128P0PBAW000 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: WS-P

Package/Case:: 84-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 128Mbit

Memory Organization:: 8M x 16

Memory Interface:: Parallel

Clock Frequency:: 66 MHz

Write Cycle Time - Word, Page:: 60ns

Access Time:: 80 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -25°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-FBGA (11.6x8)

S29WS128P0PBAW000 FAQ

1.How can I place an order for S29WS128P0PBAW000 through Aetrix?

Please submit a Request for Quotation (RFQ) for S29WS128P0PBAW000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S29WS128P0PBAW000 reliable?

The price and inventory of S29WS128P0PBAW000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29WS128P0PBAW000 is usually 5 days.

3.What payment methods are accepted for S29WS128P0PBAW000?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29WS128P0PBAW000 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S29WS128P0PBAW000?

S29WS128P0PBAW000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S29WS128P0PBAW000 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S29WS128P0PBAW000?

For technical support, including S29WS128P0PBAW000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29WS128P0PBAW000 requirements.

6.How does Aetrix verify that S29WS128P0PBAW000 is sourced from the original manufacturer or authorized distributors?

All S29WS128P0PBAW000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29WS128P0PBAW000 meets industry standards.

7.What is the process for return or replacement of S29WS128P0PBAW000?

All S29WS128P0PBAW000 units undergo pre-shipment inspection (PSI). If there is an issue with S29WS128P0PBAW000, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S29WS128P0PBAW000 part is unused and in its original packaging.

Return procedure for S29WS128P0PBAW000:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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