Infineon Technologies S29WS128PABBFW000
- Part No.:
- S29WS128PABBFW000
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 84-VFBGA
- Datasheet:
-
S29WS128PABBFW000.pdf
- Description:
- IC FLASH 128MBIT PAR 84FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,262
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S29WS128PABBFW000 from Cypress Semiconductor is a 128 Mb (8 M × 16-bit) 1.8 V simultaneous read/write NOR Flash memory using 90 nm MirrorBit™ technology, supporting zero-latency concurrent operations across two independent banks, with 104 MHz burst read capability and hardware write protection on top/bottom sectors - deployed in wireless baseband processors for firmware storage and real-time code execution.
For engineers reviewing the S29WS128PABBFW000 datasheet, S29WS128PABBFW000 pinout, S29WS128PABBFW000 application, or S29WS128PABBFW000 equivalent, this page delivers verified package mapping (84-ball FBGA), bank architecture (16 banks), timing specs (7.6 ns burst access), sector protection methods (Persistent/Password), and CFI-compliant command set - all confirmed from Cypress Document 002-01747 Rev. *B.
Technical Context
This device implements a 16-bank architecture with separate address/data paths per bank, enabling true simultaneous read and write without arbitration delay. It supports both synchronous (burst) and asynchronous operation modes, with programmable linear burst lengths (8/16/32 words) and wrap-around capability.
Internal handshaking via RDY output signals completion of program/erase operations, while ACC pin enables high-voltage acceleration for factory programming. Sector erase times are fixed at 350 ms for 16 Kword sectors and 600 ms for 64 Kword sectors, with 100,000-cycle endurance per sector.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mb (8 M × 16-bit), directly maps to 16 MB of executable code space |
| Supply Voltage | 1.70–1.95 V single VCC rail; VCCQ must ramp simultaneously - eliminates dual-rail sequencing complexity |
| Burst Read Speed | 104 MHz max; 7.6 ns tBACC - enables sub-10 ns effective word access in continuous burst mode |
| Write Buffer Size | 32-word (64-byte) buffer - reduces average programming time to 9.4 µs/word under VCC |
| Sector Architecture | Four 16 Kword boot sectors + 126 × 64 Kword main sectors - supports dual-image firmware updates |
| Data Retention | 20 years typical - validated for long-life embedded deployments without refresh |
| Cycling Endurance | 100,000 program/erase cycles per sector - sufficient for field firmware patching over product lifetime |
Pinout & Package
84-ball Fine-Pitch Ball Grid Array (FBGA), 11.6 mm × 8 mm, MCP-compatible, lead-free (Pb-free) compliant package (VBH084 footprint). Balls F6 and G8 are RFU on S29WS128P.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A22–A0 | Address Inputs | 23-bit address bus (A22–A0); supports full 8 Mword addressing with bank decoding |
| DQ15–DQ0 | Data I/O | 16-bit bidirectional data bus; shared for read, program, and status polling |
| CE#, OE#, WE# | Chip/Output/Write Enable | Asynchronous control pins; CE# enables device, OE# gates output drivers, WE# controls write latching |
| RDY | Ready Output | Open-drain status signal indicating valid burst data ready or operation completion |
| WP# | Hardware Write Protect | Active-low pin disabling program/erase in top/bottom 16 Kword sectors - provides immutable boot code protection |
| ACC | Acceleration Input | VHH-level input enabling unlock bypass mode and faster factory programming - not used in field operation |
| CLK | Clock Input | Drives synchronous burst reads; inactive in asynchronous mode but must be held at VIH/VIL |
| AVD# | Address Valid | Latches starting address on falling edge in burst mode; validates address in async mode when low |
Key Features
| Feature | Design Value |
|---|---|
| Simultaneous Read/Write | Zero-latency concurrent access across two independent banks - eliminates CPU stall during firmware update |
| Advanced Sector Protection | Persistent bits + password method - allows selective locking of boot sectors without affecting runtime code regions |
| Secured Silicon Sector | 256-word region (128 factory + 128 customer) - stores immutable calibration data or cryptographic keys |
| Common Flash Interface (CFI) | JEDEC 42.4-compliant query table - enables OS-agnostic flash driver auto-detection and configuration |
| Suspend/Resume Commands | Halts active program/erase to service high-priority read requests - maintains real-time responsiveness |
Applications
| Wireless Baseband Processor Firmware Storage | Industrial PLC Boot Code Memory |
|---|---|
|
Use Scenario: Storing boot ROM and runtime firmware for LTE/5G baseband SoCs requiring fast code fetch and in-field updates. IC Role / Device Role / Timing Role: Primary nonvolatile code storage with simultaneous read (instruction fetch) and write (patch loading) across banks. Use Value: 104 MHz burst read and zero-latency write enable real-time firmware patching without halting processor execution. |
Use Scenario: Holding certified control logic firmware in safety-critical programmable logic controllers with strict revision traceability. IC Role / Device Role / Timing Role: Secure boot memory with hardware WP# protection on top/bottom sectors and CFI-based version validation. Use Value: Dual boot sector configuration and 20-year data retention ensure deterministic startup after 15+ years of unattended operation. |
| Automotive Telematics Head Unit | Medical Imaging System Configuration Storage |
|
Use Scenario: Storing infotainment OS kernel, UI assets, and OTA update staging area in AEC-Q100 qualified telematics modules. IC Role / Device Role / Timing Role: High-reliability code/data storage with 100K-cycle endurance and password-protected sector lockdown. Use Value: Secured Silicon Sector stores device-specific calibration and cryptographic keys immune to field reprogramming. |
Use Scenario: Retaining FPGA configuration bitstreams and DICOM parameter sets in FDA-cleared diagnostic imaging equipment. IC Role / Device Role / Timing Role: Nonvolatile configuration store with guaranteed 20-year data integrity and hardware reset recovery. Use Value: Suspend/resume commands allow immediate response to emergency image acquisition triggers during background firmware writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NOR Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL128S11TFI010 | 128 Mb, 3.0 V supply, no simultaneous read/write, 90 nm process, 110 ns async access | Lacks zero-latency concurrent operation; requires voltage translation in 1.8 V systems | Select only if legacy 3.0 V design compatibility is mandatory and burst performance is secondary |
| MX29GL128FHTI-90G | 128 Mb, 1.8 V, no simultaneous operation, 70 ns async access, no CFI support | Missing RDY handshaking and sector suspend/resume - limits real-time update reliability | Choose only for cost-sensitive, non-real-time applications where firmware updates occur offline |
Compared with S29WS128PABBFW000, the S29GL128S11TFI010 trades simultaneous operation for higher voltage tolerance, while MX29GL128FHTI-90G sacrifices CFI compliance and RDY signaling to reduce BOM cost - neither supports zero-latency concurrent access critical for wireless baseband firmware agility.
Availability
S29WS128PABBFW000 is available at Aetrix Electronics and suitable for wireless infrastructure, industrial PLCs, automotive telematics, and medical imaging systems requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for S29WS128PABBFW000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded and connectivity applications.
The S29WS-P series targets wireless and portable electronics needing high-density, low-voltage NOR Flash with real-time update capability - optimized for baseband processors and application SoCs demanding concurrent code execution and firmware patching.
FAQ
What is the maximum clock frequency supported in burst read mode?
The S29WS128PABBFW000 supports up to 104 MHz in synchronous burst read mode, achieving a 7.6 ns burst access time (tBACC). This frequency is specified under 1.70–1.95 V VCC and meets JEDEC 42.4 timing requirements for high-speed code fetch in wireless baseband applications.
Does this device support true simultaneous read and write across different memory banks?
Yes - the S29WS128PABBFW000 implements a 16-bank architecture with independent address/data paths per bank, enabling zero-latency concurrent read from one bank and program/erase in another. This is confirmed in the block diagram and Section 7.8 of Document 002-01747 Rev. *B.
How is hardware write protection implemented on the top and bottom sectors?
Hardware write protection is controlled by the WP# pin: when driven low, it disables program and erase functions exclusively in the four outermost 16 Kword sectors (two at top, two at bottom). All other sectors remain fully writable, preserving flexibility for application data storage.
Is the Secured Silicon Sector accessible via standard CFI commands?
No - the Secured Silicon Sector (128 words factory + 128 words customer) requires dedicated entry/exit command sequences (detailed in Section 10.3 of the datasheet) and is isolated from normal CFI query operations to prevent accidental overwrite or unauthorized access.
S29WS128PABBFW000 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- WS-P
- Package/Case:
- 84-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 80 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-FBGA (11.6x8)
S29WS128PABBFW000 FAQ
1.How can I place an order for S29WS128PABBFW000 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29WS128PABBFW000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29WS128PABBFW000 reliable?
The price and inventory of S29WS128PABBFW000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29WS128PABBFW000 is usually 5 days.
3.What payment methods are accepted for S29WS128PABBFW000?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29WS128PABBFW000 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29WS128PABBFW000?
S29WS128PABBFW000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29WS128PABBFW000 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29WS128PABBFW000?
For technical support, including S29WS128PABBFW000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29WS128PABBFW000 requirements.
6.How does Aetrix verify that S29WS128PABBFW000 is sourced from the original manufacturer or authorized distributors?
All S29WS128PABBFW000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29WS128PABBFW000 meets industry standards.
7.What is the process for return or replacement of S29WS128PABBFW000?
All S29WS128PABBFW000 units undergo pre-shipment inspection (PSI). If there is an issue with S29WS128PABBFW000, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29WS128PABBFW000 part is unused and in its original packaging.
Return procedure for S29WS128PABBFW000:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29WS128PABBFW000 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

