Infineon Technologies S29WS256P0LBFW000

Overview

S29WS256P0LBFW000 from Cypress Semiconductor is a 256 Mb (16 M × 16-bit) 1.8 V simultaneous read/write burst-mode NOR Flash memory using 90 nm MirrorBit™ technology. It supports zero-latency concurrent read and write across independent banks, delivers 104 MHz synchronous burst access (7.6 ns), and features 32-word write buffering, dual boot sector architecture, and hardware write protection via WP#. It is deployed in wireless baseband processors for firmware storage with real-time code execution during background updates.

For engineers reviewing the S29WS256P0LBFW000 datasheet, S29WS256P0LBFW000 pinout, S29WS256P0LBFW000 application, or S29WS256P0LBFW000 equivalent, key selection criteria include simultaneous bank operation capability, 1.7–1.95 V single-supply operation, CFI compliance, 100,000 program/erase cycles per sector, and FBGA-84 package compatibility with MCP look-ahead routing.

Technical Context

This device implements a sixteen-bank architecture with separate address/data paths per bank, enabling true concurrent read and write without arbitration delay. Its dual boot sector configuration (four 16 Kword sectors at top and bottom) supports fail-safe firmware recovery, while RDY handshaking and ACC acceleration input enable deterministic timing control and factory programming optimization.

The device supports both asynchronous (80 ns tACC) and synchronous burst modes (7.6 ns tBACC), with programmable linear burst lengths (8/16/32 words) and wrap-around capability. Secured Silicon Sector provides 128-word factory and 128-word customer regions, and Advanced Sector Protection includes persistent bits, lock registers, and password-based unprotection.

Key Specifications

Pinout & Package

84-ball Very Thin Fine-Pitch BGA (VBH084), 11.6 mm × 8 mm, lead-free (Pb-free), MCP-compatible footprint with ball pitch of 0.8 mm. Pinout validated per Cypress Document 002-01747 Rev. *B, Figure 4.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar burst-mode NOR Flash applications.

Compared with MX29GL256FHI-90G and S29GL256S11TFI010, the S29WS256P0LBFW000 uniquely delivers zero-latency bank concurrency, CFI compliance, and 1.8 V operation-enabling power-constrained wireless systems to execute and update firmware without service interruption.

Availability

S29WS256P0LBFW000 is available at Aetrix Electronics and suitable for wireless infrastructure, industrial PLCs, and automotive telematics requiring stable component supply with long-term lifecycle assurance and Pb-free compliance.

Supply support for S29WS256P0LBFW000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability non-volatile memory and microcontroller solutions for automotive, industrial, and communications markets.

The S29WS-P series targets wireless infrastructure and embedded systems needing deterministic, low-voltage flash with concurrent execution and update capabilities-addressing the shift from legacy parallel NOR to high-performance, energy-efficient burst-mode architectures.

FAQ

What is the function of the ACC pin on S29WS256P0LBFW000?

The ACC (Acceleration) pin operates at V_HH (≈12 V) to enable unlock bypass mode and accelerate factory programming time. When asserted, it disables standard command sequences and allows direct high-speed write operations. At V_IL, ACC disables all program/erase functions-ensuring safe default behavior during power-up or idle states.

Does S29WS256P0LBFW000 support x8 data bus mode?

No. The S29WS256P0LBFW000 is strictly x16-only: DQ15–DQ0 form a fixed 16-bit data bus with no x8 or x32 configuration options. Address range A23–A0 supports 16 Mwords (256 Mb), and the device lacks byte-lane masking or width-select pins. Systems requiring x8 interfaces must use discrete demultiplexing or select alternate densities.

How does the RDY signal behave during simultaneous read/write operations?

RDY goes high when valid burst data is ready for read access-regardless of ongoing write/erase activity in another bank. During simultaneous operation, RDY reflects only the status of the read bank's output pipeline. It does not indicate write completion; program/erase status must be polled via status register bits (DQ7/DQ6) or interrupt-driven handshaking.

Can the Secured Silicon Sector be erased or rewritten after initial programming?

No. The Secured Silicon Sector (128 words factory + 128 words customer) is one-time programmable (OTP). Once written, its contents cannot be erased or modified-even with password or persistent protection unlock sequences. This immutability ensures cryptographic keys or boot signatures remain tamper-proof throughout product lifetime.