Infineon Technologies S29WS256P0PBFW000

Overview

S29WS256P0PBFW000 from Cypress Semiconductor is a 256 Mb (16 M × 16-bit) 1.8 V simultaneous read/write NOR Flash memory using 90 nm MirrorBit™ technology. It supports zero-latency concurrent read and write across independent banks, delivers 104 MHz synchronous burst access (7.6 ns tBACC), and features 32-word write buffering, dual boot sector architecture, and hardware write protection via WP#. It is deployed in wireless baseband processors for firmware storage and real-time code execution.

For engineers reviewing the S29WS256P0PBFW000 datasheet, S29WS256P0PBFW000 pinout, S29WS256P0PBFW000 application, or S29WS256P0PBFW000 equivalent, key selection criteria include simultaneous bank operation capability, 1.7–1.95 V single-supply operation, CFI compliance, 100,000-cycle sector endurance, and FBGA-84 package compatibility with MCP footprint requirements.

Technical Context

This device implements a sixteen-bank architecture with separate address/data paths per bank, enabling true concurrent read and write without arbitration delay. Its dual-mode interface supports both asynchronous access (80 ns tACC) and synchronous burst mode (104 MHz clock, 7.6 ns tBACC), with programmable linear burst lengths (8/16/32 words) and wrap-around capability.

Internal command execution uses JEDEC 42.4–compliant instruction set with suspend/resume for program/erase, unlock bypass for accelerated programming, and handshaking via RDY output. Sector protection combines hardware (WP#), persistent lock bits, and password-based methods applied to top/bottom 16 Kword sectors and secured silicon regions.

Key Specifications

Pinout & Package

Package: 84-ball Fine-Pitch Ball Grid Array (FBGA), 11.6 mm × 8 mm, lead-free (Pb-free), MCP-compatible footprint (VBH084).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar simultaneous-read/write NOR Flash applications.

Compared with S29GL256S11TFI010 and MX29GL256FHT2I-90G, the S29WS256P0PBFW000 uniquely delivers zero-latency bank concurrency, 1.8 V operation, and 104 MHz burst performance-making it the sole option for new wireless and automotive designs requiring real-time firmware agility.

Availability

S29WS256P0PBFW000 is available at Aetrix Electronics and suitable for wireless baseband processing, industrial HMI firmware storage, and automotive telematics units requiring stable component supply, long-lifecycle support, and MCP-compatible packaging.

Supply support for S29WS256P0PBFW000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for embedded systems.

The S29WS-P series was designed specifically for wireless infrastructure and mobile applications demanding high-density, low-voltage, concurrent-access Flash with robust security and long-term reliability.

FAQ

What is the maximum clock frequency supported in synchronous burst mode?

The S29WS256P0PBFW000 supports up to 104 MHz in synchronous burst mode, achieving a 7.6 ns burst access time (tBACC). This frequency is validated across the full operating temperature range (–25°C to +85°C) and requires stable 1.7–1.95 V supply rails with proper decoupling per Cypress layout guidelines.

Does this device support true simultaneous read and write across different banks?

Yes-it implements a sixteen-bank architecture with independent address/data paths per bank, enabling zero-latency concurrent read from one bank while programming or erasing another. This is confirmed in the device block diagram and Section 7.8 of the datasheet supplement.

How is hardware write protection implemented on this Flash device?

Hardware write protection is enabled via the WP# pin, which disables program and erase functions in the four outermost sectors (top and bottom 16 Kword sectors) when driven low. This protection remains active regardless of software commands and is electrically enforced within the silicon.

Is the 84-ball FBGA package compatible with Multi-Chip Packages (MCP)?

Yes-the S29WS256P0PBFW000 uses the VBH084 84-ball FBGA package, explicitly defined as MCP-compatible in the datasheet. Pin assignments follow the Cypress MCP look-ahead standard, supporting integration with baseband processors and pSRAM in stacked packages.