Infineon Technologies S29WS256PABBAW000

Overview

S29WS256PABBAW000 from Cypress Semiconductor is a 256 Mb (16 M × 16-bit) 1.8 V simultaneous read/write burst-mode NOR Flash memory using 90 nm MirrorBit™ technology. It supports zero-latency concurrent read and write across two independent banks, features a 32-word write buffer, 16-bank architecture, and dual boot sector configuration with hardware write protection (WP#) for top/bottom sectors. It is deployed in wireless baseband processors requiring high-density, low-voltage code storage with real-time firmware updates.

For engineers reviewing the S29WS256PABBAW000 datasheet, S29WS256PABBAW000 pinout, S29WS256PABBAW000 application, or S29WS256PABBAW000 equivalent, key selection criteria include simultaneous bank operation capability, 104 MHz synchronous burst performance, 1.7–1.95 V single-supply operation, CFI compliance, and advanced sector protection with password and persistent lock bits.

Technical Context

This device implements a sixteen-bank architecture enabling true concurrent read and write operations on separate banks using independent address/data paths. Its command set adheres to JEDEC 42.4 standards and integrates Common Flash Interface (CFI) for host auto-configuration.

It supports multiple access modes: asynchronous (80 ns tACC), page mode (20 ns intra-page), and synchronous burst (7.6 ns tBACC at 104 MHz), with RDY# handshaking and ACC input for factory programming acceleration. Power management includes standby (20 µA), automatic sleep, and hardware RESET#.

Key Specifications

Pinout & Package

84-ball Fine-Pitch Ball Grid Array (FBGA), 11.6 mm × 8 mm, lead-free compliant (VBH084 package). Balls arranged in 12×10 matrix (MD=12, ME=10), with depopulated corners (M2–M9, B1–L1) and RFU positions (e.g., G8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar burst-mode NOR Flash applications.

Compared with MX29GL256FHI-90G and S29GL256S11TFI010, the S29WS256PABBAW000 uniquely delivers 1.8 V simultaneous read/write with zero latency, making it the only option among the three for real-time firmware patching in power-constrained wireless infrastructure.

Availability

S29WS256PABBAW000 is available at Aetrix Electronics and suitable for wireless baseband processors, industrial HMIs, automotive telematics modules, and medical diagnostic imaging systems requiring stable component supply across long production lifecycles.

Supply support for S29WS256PABBAW000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded and connectivity applications.

The S29WS-P series was engineered specifically for wireless infrastructure and mobile SoC platforms needing 1.8 V, high-speed, simultaneous-access NOR Flash with robust security and long-term data integrity.

FAQ

What is the function of the ACC pin on the S29WS256PABBAW000?

The ACC (Acceleration) pin accepts VHH (typically 3.0 V) to accelerate factory programming speed and automatically enter unlock bypass mode. When held at VIL, it disables all program and erase functions. During normal operation, ACC must be tied to VIH to avoid unintended lockout. This pin is not used in standard system operation but is critical during manufacturing test and initial firmware burn-in.

Does the S29WS256PABBAW000 support true simultaneous read and write across the entire memory array?

No - simultaneous read and write are restricted to two independent banks only. The device has sixteen banks, but concurrency is limited to one read operation in one bank and one write/erase operation in another bank. Bank boundaries are fixed and defined by the 16-bank architecture; crossing bank boundaries during concurrent access will result in undefined behavior or bus contention.

How does the Secured Silicon Sector differ from standard flash sectors?

The Secured Silicon Sector is a dedicated 256-word region (128 words factory-reserved, 128 words customer-configurable) that cannot be erased or programmed via standard command sequences. Access requires explicit entry/exit commands and is isolated from main array operations. It retains data even after full chip erase and is used for immutable calibration data or cryptographic keys - unlike regular sectors, it lacks WP# hardware protection and relies on command-lock security.

Can the S29WS256PABBAW000 operate in purely asynchronous mode without using CLK?

Yes - CLK may be left unconnected or held static (VIL or VIH) during asynchronous operation. All standard NOR Flash timing (tACC, tOE, tWH) applies, and AVD# functions as an address strobe. RDY# remains active for status monitoring. However, synchronous burst mode, CFI queries, and certain advanced features like auto-incremented burst reads require CLK to be driven at valid frequency and voltage levels.