Infineon Technologies S70FL01GSAGMFV011

Overview

S70FL01GSAGMFV011 from Infineon is a 1 Gbit (128 Mbyte) dual-die SPI Multi-I/O flash memory with 3.0 V core supply, uniform 256-kbyte sectors, 100,000 program-erase cycles, and AEC-Q100 Grade 2 qualification (−40°C to +105°C). It implements two stacked S25FL512S dies, each independently accessible via CS1# and CS2#, supporting Quad DDR read, QPP programming, and OTP security.

For engineers reviewing the S70FL01GSAGMFV011 datasheet, S70FL01GSAGMFV011 pinout, S70FL01GSAGMFV011 application, or S70FL01GSAGMFV011 equivalent, key selection considerations include dual-die addressing constraints, independent status/configuration register management per die, sector erase isolation, and absence of VIO support in this variant.

Technical Context

The S70FL01GSAGMFV011 integrates two identical 512 Mbit S25FL512S dies in a single package, requiring separate chip select (CS1#/CS2#) control for die-level access. Each die maintains autonomous status registers, configuration registers, bank address registers, and block protection logic - no cross-die synchronization is performed internally.

It supports SPI modes 0 and 3, DDR read commands (Fast DDR/Dual DDR/Quad DDR), AutoBoot from preselected address, and Common Flash Interface (CFI) data at byte 27h = 1Bh. VIO is RFU (not implemented); I/O voltage range is fixed by VCC (2.7–3.6 V), and all timing parameters are specified under SDR and DDR AC test conditions per Rev. *O datasheet.

Key Specifications

Pinout & Package

Package: 24-ball BGA (ZSA024), 8 × 6 mm, 5 × 5 ball footprint, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPI flash memory applications.

Compared with S25FL512SAGMFI101 and S70FL01GSDSMFV010, the S70FL01GSAGMFV011 delivers highest density in compact BGA packaging with automotive-grade thermal resilience, but requires explicit dual-die command sequencing - making it optimal for space-constrained, high-reliability systems needing >512 Mbyte code storage.

Availability

S70FL01GSAGMFV011 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC firmware storage, medical imaging boot loaders, and avionics data recorders requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70FL01GSAGMFV011 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and secure memory solutions, with global R&D and manufacturing infrastructure.

The FL-S family targets high-reliability embedded systems requiring SPI flash with DDR performance, advanced security, and AEC-Q100 qualification - designed specifically for automotive, industrial, and medical applications demanding long-term data integrity.

FAQ

What is the functional relationship between CS1# and CS2# on the S70FL01GSAGMFV011?

CS1# and CS2# are independent chip select inputs that activate separate 512 Mbit flash dies within the same package. Commands issued with CS1# low affect only Die #1; those with CS2# low affect only Die #2. No command operates across both dies simultaneously - including bulk erase, read, or program operations.

Does the S70FL01GSAGMFV011 support VIO voltage separation like earlier FL-S devices?

No. The S70FL01GSAGMFV011 does not implement VIO functionality. Pin A3 (labeled VIO/RFU in the SOIC variant) is designated RFU in this BGA variant, and the device operates its I/O circuitry solely from VCC (2.7–3.6 V). This eliminates I/O voltage translation requirements but fixes I/O levels to the core supply range.

Can sequential reads wrap from the end of Die #1 to the start of Die #2?

No. Sequential reads do not cross die boundaries. When reading past the 512 Mbit boundary, the host must issue a new read command with CS2# asserted to access Die #2. Attempting to continue a read across the boundary results in wraparound within Die #1, not automatic die switching.

How is block protection managed across the two dies in the S70FL01GSAGMFV011?

Each die maintains fully independent block protection registers (TBPROT, BPNV, FREEZE). Protection settings must be written separately to each die. If FREEZE is set on either die, it remains locked until power-on-reset is applied to that specific die - there is no shared freeze state or cross-die clearing mechanism.