Infineon Technologies S70GL02GP11FAIR23

Overview

S70GL02GP11FAIR23 from Cypress Semiconductor is a 2 Gbit (128 M × 16-bit / 256 M × 8-bit) single-supply 3.0–3.6 V Page Mode Flash memory fabricated on 90 nm MirrorBit process technology, featuring 25 ns page access time, 110 ns random access time, and uniform 64 Kword/128 Kbyte sector architecture with 2048 sectors. It integrates dual S29GL01GP die in one package and supports CFI, suspend/resume, and secured silicon sector with factory- or customer-programmable 128-word electronic serial number - deployed in industrial embedded systems requiring high-density nonvolatile storage with fast write-buffered programming.

For engineers reviewing the S70GL02GP11FAIR23 datasheet, S70GL02GP11FAIR23 pinout, S70GL02GP11FAIR23 application, or S70GL02GP11FAIR23 equivalent, key selection criteria include 64-ball Fortified BGA package compatibility, 32-word write buffer performance, WP#/ACC acceleration support, and dual-die stack behavior affecting sector addressing and erase timing consistency across temperature ranges.

Technical Context

This device implements a dual-die stacked architecture where two independent S29GL01GP dies share control signals but retain separate memory maps and sector erase domains. Each die operates with identical 64 Kword uniform sector layout, 100,000 erase cycles per sector, and 20-year data retention at 85°C.

It supports byte/word configuration via BYTE# input, uses RY/BY# for embedded algorithm status indication, and relies on CE#/OE#/WE# for standard asynchronous interface timing. The WP#/ACC pin provides both hardware write protection of outermost sectors and VACC-accelerated programming mode, while RESET# enables hardware-initiated recovery to read mode.

Key Specifications

Pinout & Package

64-ball Fortified Ball Grid Array (FBGA), 13 mm × 11 mm body, 1.0 mm ball pitch, JEDEC-compliant LSE064 footprint. Package includes NC balls and depopulated positions per mechanical drawing; thermal and mechanical handling requires adherence to <150°C peak exposure limits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density page-mode flash applications.

Compared with S29GL01GP11FAIR23, the S70GL02GP11FAIR23 delivers double density in identical footprint but requires dual-die address management; versus MX29GL256FHI-11G, it offers 8× capacity, CFI, write buffering, and advanced protection - making it suitable for next-generation upgradable systems.

Availability

S70GL02GP11FAIR23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive infotainment boot memory, and telecom base station field upgrade storage requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for S70GL02GP11FAIR23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance nonvolatile memory and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The S70GL-P series targets high-density embedded flash applications demanding fast page-mode access, robust sector protection, and extended data retention - optimized for systems requiring field-upgradable firmware with security and longevity.

FAQ

What is the function of the WP#/ACC pin on S70GL02GP11FAIR23?

The WP#/ACC pin serves dual roles: at VIL, it hardware-protects the highest or lowest address sector regardless of software protection settings; at VHH, it enables Accelerated Programming mode using VACC voltage to automatically enter unlock-bypass, reducing write buffer programming time to 432 µs for 64 bytes. This dual functionality supports both secure boot integrity and high-throughput manufacturing programming.

Does S70GL02GP11FAIR23 support true 2 Gbit contiguous addressing?

No - the device implements two independent 1 Gbit S29GL01GP dies stacked in one package. Address space is not fully contiguous: each die occupies half the total range (0x0000000–0x3FFFFFF and 0x4000000–0x7FFFFFF), requiring explicit die selection in system firmware. Sector erase and programming operate per-die, and autoselect returns device ID per die, not as a unified 2 Gbit entity.

How does the 32-word write buffer improve effective programming performance?

The 32-word (64-byte) write buffer allows loading an entire buffer before initiating programming, reducing per-word overhead. At 15 µs per word under VACC acceleration, 64 bytes program in 432 µs - versus 960 µs for 32 discrete word writes. This cuts effective programming time by over 55%, significantly accelerating firmware updates and configuration writes in time-constrained embedded applications.

Is the Secured Silicon Sector user-programmable after factory shipment?

Yes - the 128-word Secured Silicon Sector can be programmed and permanently locked either at the factory or in-system by the end customer. Once locked, the contents (including the 8-word Electronic Serial Number) become read-only and immune to erase or program commands. Unlocking requires physical device replacement, ensuring tamper-resistant identity binding for secure boot and licensing.