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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S70GL02GS11FHV020

Name: S70GL02GS11FHV020
Brand: Infineon Technologies
SKU: S70GL02GS11FHV020
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S70GL02GS11FHV020

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 64-LBGA

Datasheet:: S70GL02GS11FHV020.pdf

Description:: IC FLASH 2GBIT PARALLEL 64FBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

S70GL02GS11FHV020 from Infineon is a 2 Gbit (256 MB) parallel NOR flash memory device fabricated on 65-nm MIRRORBIT™ process, featuring 110 ns random access time, 25 ns page access time, and 512-byte programming buffer. It integrates two S29GL01GS dies in a single 64-ball Fortified-BGA package and operates from a single 2.7–3.6 V supply with Versatile I/O supporting 1.65–VCC voltage range. Used in automotive infotainment boot storage and industrial HMI firmware storage.

For engineers reviewing the S70GL02GS11FHV020 datasheet, S70GL02GS11FHV020 pinout, S70GL02GS11FHV020 application, or S70GL02GS11FHV020 equivalent, key selection criteria include uniform 128-KB sector erase architecture, AEC-Q100 Grade 2/3 qualification, CFI support, OTP array with dual lockable regions, and suspend/resume capability for real-time system responsiveness.

Technical Context

This device implements a dual-die stacked architecture where two 1-Gb S29GL01GS dies share address/data bus and control signals via external address bit A26 to select active die. It uses MIRRORBIT™ charge-trap technology enabling high-density, low-power operation with 100,000 erase cycles and 20-year data retention.

The parallel ×16 interface supports CE#, OE#, and WE# control with RY/BY# status signaling and RESET# hardware reset. Sector protection includes volatile/non-volatile ASP and WP#-controlled outermost sector lock, while the 1024-byte OTP array provides secure configuration storage with independent locking per region.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gbit (256 MB), dual-die stack of two 1-Gb S29GL01GS devices
Interface Type	Parallel ×16 data bus with CE#/OE#/WE# control logic
Access Time	110 ns random access; 25 ns page access - enables fast code execution from flash
Programming Buffer	512-byte buffer - reduces effective programming time vs. byte/word writes
Sector Size	Uniform 128 KB sectors (2048 total) - simplifies firmware partitioning and OTA update management
Operating Voltage	VCC = 2.7–3.6 V; VIO = 1.65–VCC - supports mixed-voltage host systems
Data Retention	20 years typical - meets long-life requirements for automotive and industrial deployments
Erase Endurance	100,000 cycles per sector - suitable for frequent field-upgrade scenarios

Pinout & Package

Package: 64-ball LSH Fortified BGA, 13 mm × 11 mm, RoHS-compliant, with thermal pad (VSSQ) and special handling requirements (no ultrasonic cleaning, max 150°C exposure).

Pin/Terminal	Circuit Role	Design Meaning
A26–A0	Address Input	A26 selects between upper/lower 1-Gb die; A0–A25 address within selected die
DQ15–DQ0	Bidirectional Data	×16 parallel data path for read/write/program operations
CE#, OE#, WE#	Control Inputs	Chip/Output/Write Enable - standard parallel flash control timing interface
RY/BY#	Status Output	Active-low Ready/Busy signal - indicates embedded algorithm progress
WP#	Protection Input	Write Protect/Acceleration - locks outermost sectors or enables unlock-bypass mode
RESET#	Hardware Reset	Asynchronous reset to reading state - critical for recovery after power fault
VCC, VIO, VSS, VSSQ	Power/Ground	VCC core supply; VIO I/O voltage; VSS system ground; VSSQ flash array ground - decoupling required per layout guidelines
NC, RFU, DNU	No Connect	NC: unconnected; RFU: reserved for future use; DNU: test-only, must not route on PCB

Key Features

Feature	Design Value
Dual-Die Stacked Architecture	Two 1-Gb S29GL01GS dies in one package - doubles density without increasing footprint or interface complexity
Versatile I/O (VIO)	1.65 V to VCC I/O voltage range - eliminates level shifters when interfacing with 1.8 V or 3.3 V controllers
512-Byte Programming Buffer	Enables burst programming up to 1.5 MBps - accelerates firmware updates and field reprogramming
Advanced Sector Protection (ASP)	Volatile and non-volatile lock per sector - prevents accidental erase/program during debug or runtime
OTP Array with Dual Lock Regions	1024-byte one-time-programmable space with independent locks - stores secure keys or calibration data
Suspend/Resume for Erase & Program	Pauses background algorithms on command - allows high-priority reads during long erase cycles

Applications

Automotive Infotainment Boot Storage

Industrial HMI Firmware Storage

Use Scenario: Stores boot code and OS kernel for head unit microcontrollers requiring fast, reliable startup after ignition cycle.

IC Role / Device Role / Timing Role: Parallel NOR flash acting as XIP (eXecute-In-Place) memory - delivers sub-120 ns instruction fetch latency.

Use Value: AEC-Q100 Grade 2 qualification (–40°C to +105°C) ensures operation across full vehicle thermal envelope.

Use Scenario: Holds firmware image and UI assets for programmable logic controller (PLC) human-machine interface panels.

IC Role / Device Role / Timing Role: Nonvolatile program storage with sector-level erase - enables safe over-the-air (OTA) updates without full chip erase.

Use Value: Uniform 128-KB sectors simplify update partitioning; 100,000 erase cycles support multi-year field deployment.

Medical Diagnostic Equipment BIOS

Avionics Display System Configuration

Use Scenario: Stores BIOS and calibration tables in portable ultrasound or MRI console mainboards requiring certified data integrity.

IC Role / Device Role / Timing Role: Secure boot source with OTP-locked calibration parameters - prevents unauthorized firmware modification.

Use Value: Dual-lock OTP array ensures tamper-resistant storage of device-specific calibration coefficients.

Use Scenario: Configures display resolution, brightness mapping, and safety-critical UI overlays in cockpit multifunction displays.

IC Role / Device Role / Timing Role: Configuration memory accessed at power-on reset - requires guaranteed 20-year data retention under vibration/thermal stress.

Use Value: 20-year data retention and 65-nm MIRRORBIT™ reliability meet DO-160 environmental compliance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
S29GL01GS11FHIV10	Single-die 1 Gbit version in same 64-ball Fortified-BGA package; identical timing and feature set except density	Used where 128 MB suffices and board space or cost optimization is prioritized over 256 MB capacity	Select when firmware size fits within 128 MB and dual-die stacking introduces unnecessary complexity
MX29GL256FHTI-90G	2 Gbit parallel NOR from Macronix; 90 ns random access, no dual-die architecture, lacks OTP array and ASP granularity	Targeted at cost-sensitive industrial control where extended temperature and advanced protection are secondary	Choose if AEC-Q100 qualification and OTP security are not required, and faster access time is acceptable trade-off

Compared with S29GL01GS11FHIV10, this part doubles density without changing footprint or interface; versus MX29GL256FHTI-90G, it adds automotive qualification, OTP security, and finer-grained sector protection - critical for safety- and security-sensitive designs.

Availability

S70GL02GS11FHV020 is available at Aetrix Electronics and suitable for automotive infotainment boot storage, industrial HMI firmware storage, and medical diagnostic equipment BIOS requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70GL02GS11FHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, industrial, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the GL-S family of high-reliability parallel NOR flash memories designed specifically for automotive and industrial applications demanding AEC-Q100 qualification, long data retention, and robust sector protection.

FAQ

What is the function of the A26 address line in S70GL02GS11FHV020?

A26 serves as the die-select signal: when high, it enables the upper 1-Gb die; when low, it enables the lower 1-Gb die. This allows the 2-Gb device to appear as a contiguous memory space while physically managing two independent flash arrays sharing the same control and data bus.

Does S70GL02GS11FHV020 support Common Flash Interface (CFI)?

Yes, it fully supports CFI per JEDEC JESD68 standard. The device responds to CFI query commands with vendor- and device-specific identification, geometry, and command-set information, enabling automatic driver detection and configuration in bootloader and OS environments.

How does the Versatile I/O (VIO) feature impact system design?

VIO allows independent setting of I/O voltage from 1.65 V to VCC, eliminating external level shifters when interfacing with 1.8 V or 3.3 V host processors. This simplifies PCB layout, reduces BOM count, and improves signal integrity by avoiding voltage translation delays in timing-critical read paths.

Can the OTP array be reprogrammed after initial programming?

No - the 1024-byte OTP array is permanently programmable once written. Each of its two lockable regions can be independently locked via dedicated lock bits, preventing further writes. This ensures cryptographic keys or calibration data remain immutable after factory programming.

S70GL02GS11FHV020 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: GL-S

Package/Case:: 64-LBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 110 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 105°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 64-FBGA (13x11)

S70GL02GS11FHV020 FAQ

1.How can I place an order for S70GL02GS11FHV020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S70GL02GS11FHV020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S70GL02GS11FHV020 reliable?

The price and inventory of S70GL02GS11FHV020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GS11FHV020 is usually 5 days.

3.What payment methods are accepted for S70GL02GS11FHV020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GS11FHV020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S70GL02GS11FHV020?

S70GL02GS11FHV020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S70GL02GS11FHV020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S70GL02GS11FHV020?

For technical support, including S70GL02GS11FHV020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GS11FHV020 requirements.

6.How does Aetrix verify that S70GL02GS11FHV020 is sourced from the original manufacturer or authorized distributors?

All S70GL02GS11FHV020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GS11FHV020 meets industry standards.

7.What is the process for return or replacement of S70GL02GS11FHV020?

All S70GL02GS11FHV020 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GS11FHV020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S70GL02GS11FHV020 part is unused and in its original packaging.

Return procedure for S70GL02GS11FHV020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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