Infineon Technologies S70GL02GS12FHIV10

Overview

S70GL02GS12FHIV10 from Infineon is a 2 Gbit (256 MB) parallel NOR flash memory device fabricated on 65-nm MIRRORBIT™ process, featuring 128-KB uniform sectors, 110 ns random access time, and 25 ns page access time. It operates from a single 2.7–3.6 V supply with Versatile I/O supporting 1.65–VCC VIO, and integrates a 512-byte programming buffer for accelerated write operations in embedded storage applications.

For engineers reviewing the S70GL02GS12FHIV10 datasheet, S70GL02GS12FHIV10 pinout, S70GL02GS12FHIV10 application, or S70GL02GS12FHIV10 equivalent, key selection criteria include sector erase granularity, industrial/automotive temperature support (–40°C to +105°C), CFI compliance, OTP array availability, and Fortified-BGA mechanical handling requirements.

Technical Context

This dual-die stacked device combines two S29GL01GS 1-Gb dies in a single 64-ball LSH Fortified-BGA package, enabling 2-Gb density while retaining discrete die architecture-address lines A0–A25 are shared, with A26 selecting between top and bottom die. Memory mapping uses uniform 128-KB sectors across 2048 sectors, supporting both volatile and non-volatile advanced sector protection (ASP).

The device implements three status monitoring methods-Ready/Busy# pin, status register polling, and data polling-and supports suspend/resume during program/erase. Write protection is controlled via WP# input, which can lock first/last sectors independently of ASP settings, and enables unlock-bypass mode at VHH for accelerated programming.

Key Specifications

Pinout & Package

Package: 64-ball LSH Fortified-BGA, 13 mm × 11 mm, with special handling requirements (no ultrasonic cleaning; max 150°C exposure).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Compared with S29GL01GS12FHIV10, the S70GL02GS12FHIV10 doubles density in same footprint but adds die-select complexity; versus MX29GL256FHT2I-90G, it trades slightly slower access for AEC-Q100 Grade 2 qualification, OTP security, and superior endurance.

Availability

S70GL02GS12FHIV10 is available at Aetrix Electronics and suitable for automotive powertrain ECUs, industrial PLCs, medical imaging systems, and avionics display controllers requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for S70GL02GS12FHIV10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions.

The GL-S series targets automotive and industrial applications demanding AEC-Q100 qualification, long data retention, and robust sector protection-designed specifically for mission-critical firmware storage in harsh environments.

FAQ

What is the function of the A26 pin on S70GL02GS12FHIV10?

A26 serves as the die select signal: logic low accesses the lower 1-Gb die (addresses 0x0000000–0x07FFFFFF), and logic high selects the upper 1-Gb die (0x08000000–0x0FFFFFFF). This enables seamless 2-Gb addressing using standard 26-bit address lines A0–A25 shared between both dies.

Does S70GL02GS12FHIV10 support common flash interface (CFI)?

Yes, the device fully supports CFI per JEDEC JESD68-A, allowing host systems to auto-detect device geometry, timing parameters, and command sets at runtime. CFI query commands return vendor ID, device ID, and sector map information essential for portable bootloader implementation.

How does the Ready/Busy# (RY/BY#) pin behave during erase operations?

RY/BY# is an active-low, open-drain output that goes low (VIL) when an embedded erase or program algorithm begins, remains low throughout the operation, and returns high-impedance (Hi-Z) upon completion. It provides hardware-level status signaling without requiring status register polling.

Can the OTP array be used for secure key storage in automotive applications?

Yes-the 1024-byte OTP array contains two independently lockable regions, each programmable once and permanently read-only after locking. This supports secure storage of cryptographic keys, calibration constants, or VIN data in AEC-Q100-compliant ECUs where tamper resistance and immutability are required.