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Infineon Technologies S70GL02GS12FHVV20
- Part No.:
- S70GL02GS12FHVV20
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GS12FHVV20.pdf
- Description:
- IC FLASH 2GBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,481
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Product details
Overview
S70GL02GS12FHVV20 from Infineon is a 2 Gbit (256 MB) parallel NOR flash memory device fabricated on 65-nm MIRRORBIT™ process, featuring 128-KB uniform sectors, 110 ns random access time, and 25 ns page access time. It operates from a single 2.7–3.6 V supply with Versatile I/O supporting 1.65–VCC VIO, and integrates a 512-byte programming buffer for accelerated write operations in embedded boot code and firmware storage applications.
For engineers reviewing the S70GL02GS12FHVV20 datasheet, S70GL02GS12FHVV20 pinout, S70GL02GS12FHVV20 application, or S70GL02GS12FHVV20 equivalent, key selection criteria include sector erase granularity (128 KB), industrial/automotive temperature support (–40°C to +105°C), dual-die stack architecture, CFI compliance, and Fortified-BGA package compatibility with legacy GL-S footprint designs.
Technical Context
This device implements a dual-die stack of two S29GL01GS 1-Gb dies in a single 64-ball LSH Fortified-BGA package, enabling 2-Gb density while maintaining pin compatibility with discrete 1-Gb variants. Addressing uses A0–A26 lines, with A26 selecting between upper and lower die via external logic or internal AMAX+1 control.
The memory supports three protection modes: hardware write protection via WP#, advanced sector protection (ASP) with volatile/non-volatile locking per sector, and OTP array with two lockable 1024-byte regions. Status reporting uses RY/BY# pin, status register polling, and data polling - all fully compliant with Common Flash Interface (CFI) standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gbit (256 MB), realized as dual 1-Gb S29GL01GS die stack |
| Access Time | 110 ns random access; enables fast instruction fetch in boot ROM applications |
| Page Access | 25 ns page access time; reduces latency during burst read of consecutive instructions |
| Sector Size | Uniform 128 KB sectors (2048 total); simplifies firmware partitioning and OTA update management |
| Programming Buffer | 512-byte buffer; allows single-command programming of up to 256 words, improving write throughput to 1.5 MBps |
| Erase Endurance | 100,000 cycles per sector; supports long-life field-upgradeable systems in industrial controllers |
| Data Retention | 20 years at +85°C; ensures firmware integrity over full product lifecycle without refresh |
Pinout & Package
Package: 64-ball LSH Fortified Ball Grid Array (BGA), 13 mm × 11 mm, RoHS-compliant, with enhanced mechanical robustness for automotive and industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A26 | Address Inputs | A26 selects upper/lower die; A0–A25 address within selected die (128 KB sector boundary aligned) |
| DQ0–DQ15 | Bidirectional Data Bus | ×16 parallel interface; supports byte/word writes and CFI query without external data width conversion |
| CE#, OE#, WE# | Chip/Output/Write Enable | Standard parallel NOR control signals; CE# active-low enables device; OE#/WE# control read/write timing per JEDEC 44.01 |
| RY/BY# | Ready/Busy Output | Open-drain output indicating active program/erase; used for hardware wait-state generation or interrupt-driven status polling |
| WP# | Write Protect Input | Hardware-level sector lock for top/bottom 128 KB; overrides ASP settings when pulled low |
| VCC / VIO / VSS | Power Supplies | VCC = 2.7–3.6 V core; VIO = 1.65–VCC I/O voltage; independent VSS pins reduce noise coupling in high-speed reads |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Die Stack Architecture | Two S29GL01GS dies in single BGA footprint; maintains layout compatibility while doubling density |
| Versatile I/O Voltage Range | VIO supports 1.65 V to VCC; eliminates level shifters when interfacing with 1.8 V or 3.3 V host processors |
| Advanced Sector Protection (ASP) | Volatile and non-volatile locking per 128 KB sector; enables secure bootloader and parameter partitioning |
| OTP Memory Array | 1024-byte one-time-programmable space with two lockable regions; stores calibration data or security keys |
| CFI Compliance | Full Common Flash Interface implementation; enables automatic driver detection and configuration in U-Boot/Linux MTD stacks |
Applications
| Automotive Instrument Cluster | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Storing calibrated display graphics, gauge animations, and safety-critical boot firmware in digital dashboards. IC Role / Device Role / Timing Role: Parallel NOR boot memory mapped to ARM Cortex-R5 processor's XIP address space. Use Value: 110 ns random access enables sub-200 µs boot initialization; AEC-Q100 Grade 2 rating ensures operation up to +105°C under hood conditions. | Use Scenario: Holding firmware images, configuration tables, and real-time OS kernel for programmable logic controllers in factory automation. IC Role / Device Role / Timing Role: Non-volatile code storage with sector-level erase isolation for safe field updates. Use Value: 128 KB uniform sectors allow atomic firmware patching; 100K erase cycles support >10-year maintenance cycles without wear leveling. |
| Telecom Base Station Boot ROM | Medical Imaging System Configuration |
Use Scenario: Hosting boot loader, FPGA bitstreams, and protocol stack binaries in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Primary boot device accessed via parallel bus during power-on reset sequence. Use Value: 25 ns page access accelerates sequential instruction fetch; CFI compliance enables standardized flash driver reuse across vendor platforms. | Use Scenario: Storing DICOM metadata templates, calibration coefficients, and regulatory compliance flags in MRI and CT scanner control modules. IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration store with OTP-backed cryptographic keys. Use Value: Two-lock OTP regions prevent accidental overwrite of FDA-mandated calibration data; ASP prevents unauthorized firmware modification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GS12FHIV20 | Single 1-Gb die; identical 64-ball LSH BGA package and pinout; lacks dual-die stacking | Lower density limits firmware image size; suitable where 128 MB suffices and cost-per-bit is prioritized | Select when board layout must remain unchanged but 2-Gb capacity is unnecessary |
| MX29GL256FHTI-90G | 2-Gb Spansion-compatible parallel NOR; 90 ns max tACC; no dual-die architecture; different CFI ID map | Requires driver revalidation due to non-identical status register layout and erase suspend behavior | Choose only if existing design already uses MX29GL256FH and migration path avoids hardware change |
Compared with S29GL01GS12FHIV20, this part doubles density without footprint change; versus MX29GL256FHTI-90G, it offers faster access, superior endurance, and guaranteed Infineon automotive qualification - critical for safety-critical boot memory.
Availability
S70GL02GS12FHVV20 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, telecom base station boot ROMs, and medical imaging system configuration storage requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for S70GL02GS12FHVV20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions for industrial and mission-critical applications.
The GL-S series targets high-reliability embedded systems requiring deterministic boot performance, long-term data retention, and AEC-Q100 qualified flash memory - especially in automotive, industrial automation, and communications infrastructure.
FAQ
What is the maximum operating temperature range supported by S70GL02GS12FHVV20?
This device is qualified to AEC-Q100 Grade 2, supporting continuous operation from –40°C to +105°C. It also meets Grade 3 (–40°C to +85°C) and industrial specifications. Thermal derating is not required within these ranges, and the 20-year data retention rating applies at +85°C ambient.
Does S70GL02GS12FHVV20 support true simultaneous read-while-write operation?
No, it does not support concurrent read and program/erase. However, it provides suspend/resume commands for both program and erase operations, allowing temporary interruption to service a high-priority read request and later resume the suspended operation without data loss or timing violation.
How is the dual-die architecture managed during normal read and write operations?
A26 acts as the die select line: low selects the lower 1-Gb die (addresses 0x0000000–0x07FFFFFF), high selects the upper die (0x08000000–0x0FFFFFFF). The device presents a contiguous 2-Gb address space; no external multiplexing or glue logic is required beyond standard NOR bus timing.
Can the OTP array be reprogrammed after initial programming?
No - the 1024-byte OTP array is physically one-time programmable. Once a bit is set to '0', it cannot be changed back to '1'. Each of the two lockable regions can be permanently locked via dedicated status bits, preventing further writes even before full programming is complete.
S70GL02GS12FHVV20 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-S
- Package/Case:
- 64-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S70GL02GS12FHVV20 FAQ
1.How can I place an order for S70GL02GS12FHVV20 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GS12FHVV20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GS12FHVV20 reliable?
The price and inventory of S70GL02GS12FHVV20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GS12FHVV20 is usually 5 days.
3.What payment methods are accepted for S70GL02GS12FHVV20?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GS12FHVV20 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GS12FHVV20?
S70GL02GS12FHVV20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GS12FHVV20 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GS12FHVV20?
For technical support, including S70GL02GS12FHVV20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GS12FHVV20 requirements.
6.How does Aetrix verify that S70GL02GS12FHVV20 is sourced from the original manufacturer or authorized distributors?
All S70GL02GS12FHVV20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GS12FHVV20 meets industry standards.
7.What is the process for return or replacement of S70GL02GS12FHVV20?
All S70GL02GS12FHVV20 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GS12FHVV20, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GS12FHVV20 part is unused and in its original packaging.
Return procedure for S70GL02GS12FHVV20:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70GL02GS12FHVV20 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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