My Inquiry
My Account
Infineon Technologies S70GL02GS12FHVV23
- Part No.:
- S70GL02GS12FHVV23
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GS12FHVV23.pdf
- Description:
- IC FLASH 2GBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,789
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S70GL02GS12FHVV23 from Infineon is a 2 Gbit (256 MB) parallel NOR flash memory device fabricated on 65-nm MIRRORBIT™ technology, featuring 128-KB uniform sectors, 110 ns random access time, and 25 ns page access time. It operates from a single 2.7–3.6 V supply with Versatile I/O supporting 1.65–VCC voltage range, and integrates dual S29GL01GS die in one package for embedded boot code storage in automotive instrument clusters.
For engineers reviewing the S70GL02GS12FHVV23 datasheet, S70GL02GS12FHVV23 pinout, S70GL02GS12FHVV23 application, or S70GL02GS12FHVV23 equivalent, key selection criteria include sector erase endurance (100,000 cycles), 20-year data retention, AEC-Q100 Grade 2/3 qualification, 512-byte programming buffer throughput (1.5 MBps), and Fortified-BGA mechanical robustness for high-reliability control units.
Technical Context
This device implements a dual-die stack architecture-two independent 1-Gb S29GL01GS dies sharing address/data bus and control signals-with external address line A26 selecting between top and bottom die. Sector erase and buffer programming are executed per-die, with status reporting via RY/BY# pin and Status Register polling.
It supports Common Flash Interface (CFI) for host auto-configuration, Advanced Sector Protection (ASP) with volatile/non-volatile locking per sector, and OTP array (1024 bytes, two lockable regions) for secure configuration storage. WP# enables hardware write protection of outermost sectors or programming acceleration at VHH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 2 Gbit (256 MB), dual-die stack of two 1-Gb S29GL01GS devices |
| Access time | 110 ns random access (tACC), 25 ns page access (tPACC) at VIO = VCC = 3.0 V |
| Programming buffer | 512-byte buffer enabling single-operation programming up to full page size |
| Erase endurance | 100,000 program/erase cycles per sector, verified per JEDEC JESD22-A117 |
| Data retention | 20 years at +85°C, meeting automotive long-term storage requirements |
| Operating temperature | –40°C to +105°C (AEC-Q100 Grade 2), –40°C to +85°C (Grade 3) |
| Supply voltage | VCC = 2.7–3.6 V for read/program/erase; VIO = 1.65–VCC for flexible interface level shifting |
Pinout & Package
Package: 64-ball LSH Fortified BGA, 13 mm × 11 mm, RoHS-compliant, with enhanced mechanical reliability for automotive PCBs subject to thermal cycling and vibration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A26 | Dual-die select address | High selects second die (upper 1 Gb); low accesses first die (lower 1 Gb) |
| DQ15–DQ0 | Bi-directional data bus | ×16 parallel interface; supports CFI query and command execution |
| CE#, OE#, WE# | Chip/Output/Write Enable controls | Standard parallel NOR timing; CE# active-low enables device; OE#/WE# control read/write direction |
| RY/BY# | Ready/Busy output | Active-low open-drain signal indicating ongoing program/erase; used for polling or interrupt-driven operation |
| WP# | Write Protect / Acceleration input | VIL locks outermost sectors; VHH enables unlock-bypass mode for accelerated programming |
| RESET# | Hardware reset input | Asynchronous active-low reset returning device to read mode; required after power-up or error recovery |
| VIO | Versatile I/O supply | Independent voltage rail (1.65–VCC) setting logic threshold for DQ/CE#/OE#/WE#/WP#/RESET# pins |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die stacking | Two fully independent 1-Gb S29GL01GS dies in single footprint, doubling density without increasing board area |
| 512-byte programming buffer | Reduces effective programming time by >8× vs. byte-wise writes, critical for firmware update latency |
| Advanced Sector Protection (ASP) | Volatile and non-volatile locking per 128-KB sector prevents accidental erase/write during field operation |
| OTP array | 1024-byte one-time-programmable region with two separately lockable blocks for secure calibration or serial data |
| AEC-Q100 qualification | Grade 2 (–40°C to +105°C) and Grade 3 (–40°C to +85°C) certified for automotive powertrain and body control modules |
Applications
| Automotive Instrument Cluster | Industrial PLC Firmware Storage |
|---|---|
|
Use Scenario: Storing calibrated gauge graphics, driver alert logic, and OTA update images in digital dashboards. IC Role / Device Role / Timing Role: Boot code and persistent application storage with deterministic 110 ns read latency for real-time UI rendering. Use Value: Dual-die architecture provides redundancy-ready layout; ASP prevents corruption during vehicle battery transients. |
Use Scenario: Holding ladder logic firmware, I/O mapping tables, and safety-critical configuration in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile program memory accessed via parallel bus during cold start and runtime reconfiguration. Use Value: 100,000 erase cycles support frequent firmware updates over 15+ year product life; OTP stores factory-calibrated analog offsets. |
| Medical Imaging Control Board | Avionics Display System |
|
Use Scenario: Hosting FPGA bitstreams, sensor calibration profiles, and diagnostic logs in portable ultrasound systems. IC Role / Device Role / Timing Role: High-reliability code storage with 20-year data retention under thermal stress and EMI exposure. Use Value: AEC-Q100 Grade 2 rating ensures operation at +105°C ambient; VIO flexibility simplifies interface to mixed-voltage FPGAs. |
Use Scenario: Storing flight display boot firmware, font assets, and failure-mode maps in certified cockpit displays. IC Role / Device Role / Timing Role: Certified NOR flash for DO-254 Level A/B design assurance with traceable erase/write history. Use Value: RY/BY# pin enables deterministic interrupt-driven programming; CFI support simplifies bootloader compatibility across display generations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GS11FHIV10 | Single-die 1 Gbit version; identical 65-nm process, timing, and feature set except no A26 die-select capability | Limited to half capacity; suitable only where 128 MB suffices and dual-die coordination is unnecessary | Select when board space allows separate placement and firmware partitioning is simpler than dual-die management |
| MX29GL256FHT2I-90G | Micron 256-MB parallel NOR; 90 ns max tACC, no AEC-Q100 Grade 2, lacks OTP array and ASP granularity | Not qualified for under-hood automotive use; lower endurance (100K cycles same, but no long-term retention validation at +105°C) | Consider only for industrial or commercial designs where AEC-Q100 and extended temperature are not required |
Compared with S29GL01GS11FHIV10, S70GL02GS12FHVV23 delivers double density in same footprint with die-select control, while MX29GL256FHT2I-90G offers cost advantage but omits automotive-grade reliability features and OTP security.
Availability
S70GL02GS12FHVV23 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, medical imaging control boards, and avionics display systems requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S70GL02GS12FHVV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions for mission-critical systems.
This part belongs to the GL-S series of parallel NOR flash devices designed specifically for automotive and industrial applications demanding AEC-Q100 qualification, long data retention, and robust sector protection mechanisms.
FAQ
What is the function of the A26 pin on S70GL02GS12FHVV23?
A26 serves as the dual-die select address line: when driven high, it enables access to the upper 1-Gb die; when low, it selects the lower 1-Gb die. This allows the 2-Gb device to appear as two contiguous 1-Gb banks, preserving software compatibility with single-die drivers while doubling density in the same BGA footprint.
Does S70GL02GS12FHVV23 support Common Flash Interface (CFI)?
Yes, the device fully supports CFI per JEDEC JESD68. The CFI query structure is accessible via standard command sequences on the ×16 data bus, enabling host systems to auto-detect device geometry, sector map, timing parameters, and supported features without hard-coded assumptions.
How does the Versatile I/O (VIO) supply improve system design flexibility?
VIO allows independent setting of the input/output logic threshold (1.65 V to VCC), decoupling interface voltage from core VCC. This enables direct connection to 1.8-V, 2.5-V, or 3.3-V host processors without level shifters, reducing BOM count and signal integrity risk in mixed-voltage embedded systems.
Can the OTP array be used for secure key storage?
The 1024-byte OTP array contains two independently lockable regions, each programmable once. While not cryptographically hardened, it provides tamper-resistant storage for calibration constants, device serial numbers, or symmetric keys in systems where physical access is controlled and overwrite prevention is required.
S70GL02GS12FHVV23 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-S
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S70GL02GS12FHVV23 FAQ
1.How can I place an order for S70GL02GS12FHVV23 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GS12FHVV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GS12FHVV23 reliable?
The price and inventory of S70GL02GS12FHVV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GS12FHVV23 is usually 5 days.
3.What payment methods are accepted for S70GL02GS12FHVV23?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GS12FHVV23 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GS12FHVV23?
S70GL02GS12FHVV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GS12FHVV23 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GS12FHVV23?
For technical support, including S70GL02GS12FHVV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GS12FHVV23 requirements.
6.How does Aetrix verify that S70GL02GS12FHVV23 is sourced from the original manufacturer or authorized distributors?
All S70GL02GS12FHVV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GS12FHVV23 meets industry standards.
7.What is the process for return or replacement of S70GL02GS12FHVV23?
All S70GL02GS12FHVV23 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GS12FHVV23, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GS12FHVV23 part is unused and in its original packaging.
Return procedure for S70GL02GS12FHVV23:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70GL02GS12FHVV23 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
