Infineon Technologies S70GL02GT11FAI030

Overview

S70GL02GT11FAI030 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory device fabricated on 45-nm MIRRORBIT™ process, featuring 110 ns random access time, 20 ns page access time, and 512-byte programming buffer. It integrates two 1-Gb S29GL01GT dies in a single 64-ball fortified-BGA package and operates from 2.7 V to 3.6 V with industrial temperature range (–40°C to +85°C), targeting boot code storage in automotive instrument clusters.

For engineers reviewing the S70GL02GT11FAI030 datasheet, S70GL02GT11FAI030 pinout, S70GL02GT11FAI030 application, or S70GL02GT11FAI030 equivalent, key selection criteria include uniform 128-KB sector erase capability, dual-die stack architecture, OTP array support, ASP protection, and RY/BY# open-drain ready/busy signaling for multi-device synchronization.

Technical Context

This device implements a dual-die stacked architecture where two independent 1-Gb S29GL01GT dies share common control signals (CE#, WE#, OE#, RESET#) and data bus (DQ0–DQ15), with address lines A0–A26 supporting full 2-Gb addressing. The internal block diagram confirms separate VCCQ and VIO supplies enabling I/O voltage flexibility (1.65 V to VCC).

It supports ×8/×16 data bus width via BYTE# input, uses status register polling and RY/BY# open-drain output for operation status monitoring, and includes suspend/resume functionality for both program and erase operations - critical for real-time interrupt handling in safety-critical embedded systems.

Key Specifications

Pinout & Package

Package: 64-ball LSH fortified BGA, 13 mm × 11 mm, RoHS-compliant, with thermal pad exposed on bottom side per Infineon specification LSH064.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Compared with S29GL01GT11FAI020, the S70GL02GT11FAI030 delivers double density in identical footprint; versus MX29GL256FHI-90G, it offers superior data retention (20 years vs. 10 years) and integrated ASP but requires Infineon-specific driver support.

Availability

S70GL02GT11FAI030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, medical imaging systems, and avionics data loggers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70GL02GT11FAI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and nonvolatile memory solutions for industrial and safety-critical applications.

The GL-T series targets high-reliability embedded systems needing parallel NOR flash with AEC-Q100 qualification, robust sector protection, and long-term data integrity - optimized for automotive, medical, and aerospace boot and firmware storage.

FAQ

What is the function of the RY/BY# pin and how must it be connected?

RY/BY# is an open-drain ready/busy output indicating whether an embedded algorithm (program/erase) is active (LOW) or complete (High-Z). It requires an external pull-up resistor to VIO. Multiple devices may share a single RY/BY# line for system-wide readiness detection, provided all outputs are open-drain and pull-up is correctly sized per I_OL limits.

Does S70GL02GT11FAI030 support both ×8 and ×16 data bus widths?

Yes, via the BYTE# input: when BYTE# = LOW, the device operates in ×8 mode with DQ7–DQ0 active and DQ15 repurposed as A-1 address bit; when BYTE# = HIGH, it operates in ×16 mode with full DQ0–DQ15 data bus. This allows flexible integration with 8-bit or 16-bit host controllers without hardware redesign.

How does the WP# pin interact with Advanced Sector Protection (ASP)?

WP# provides hardware-level protection for the highest 128-KB sector independent of ASP settings - it overrides all software-based locks. When WP# = LOW, that sector is write-protected even if ASP bits are cleared; when WP# = HIGH, ASP settings fully control protection. WP# has an internal pull-up, so it defaults to unprotected unless actively driven low.

Is the OTP array truly one-time programmable and how is it secured?

Yes, the 1024-byte OTP array contains two independently lockable regions. Once a region's lock bit is set (via specific CFI command sequence), further writes to that region are permanently disabled. Locking is irreversible and survives power cycles, making it suitable for storing cryptographic keys or calibration constants that must remain tamper-proof throughout device life.