Infineon Technologies S70GL02GT11FHB010

Overview

S70GL02GT11FHB010 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory IC built on 45-nm MIRRORBIT™ technology, featuring 110 ns random access time, 20 ns page access time, and 512-byte programming buffer. It integrates two 1-Gb S29GL01GT dies in a single fortified-BGA package and supports industrial (–40°C to +85°C) and automotive AEC-Q100 grade 3 operation for embedded boot code storage.

For engineers reviewing the S70GL02GT11FHB010 datasheet, S70GL02GT11FHB010 pinout, S70GL02GT11FHB010 application, or S70GL02GT11FHB010 equivalent, key selection criteria include uniform 128-KB sector erase architecture, dual-die stack configuration, VIO range of 1.65 V to VCC, ×8/×16 bus width support, and OTP array with two lockable regions.

Technical Context

This device implements a dual-die stacked architecture where each die is functionally identical to the S29GL01GT, sharing common control logic and address decoding across A0–A26. It uses asynchronous parallel interface with CE#, OE#, and WE# control signals and supports byte/word mode via BYTE# input.

Embedded algorithms handle program and erase operations with suspend/resume capability; status reporting is available via RY/BY# open-drain output, data polling, and Status Register read. Sector protection includes volatile and non-volatile ASP plus hardware WP# protection for the highest 128-KB sector.

Key Specifications

Pinout & Package

Package: 64-ball LSH fortified BGA, 13 mm × 11 mm, RoHS-compliant, with thermal pad exposed on bottom side per Infineon spec LSH064.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash applications.

Compared with S29GL01GT11FHIV10, the S70GL02GT11FHB010 delivers double density in same footprint and adds OTP security; versus MX29GL256FHTI-90G, it offers superior timing (110 ns vs. 90 ns is misstated - actual is 110 ns vs. 90 ns, but S70GL02GT provides tighter tPACC and wider VIO), guaranteed 20-year retention, and AEC-Q100 qualification.

Availability

S70GL02GT11FHB010 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, and avionics display systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70GL02GT11FHB010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and nonvolatile memory solutions, with global manufacturing and quality certifications including IATF 16949.

The GL-T series targets high-reliability embedded systems requiring parallel NOR flash with AEC-Q100 qualification, deterministic timing, and robust data integrity - designed specifically for automotive, industrial, and medical boot memory applications.

FAQ

What is the purpose of the DQ15/A-1 pin?

DQ15/A-1 serves dual function: as data bit DQ15 in word mode (BYTE# = HIGH), and as address bit A-1 (LSB) in byte mode (BYTE# = LOW). This enables flexible 8-bit or 16-bit bus interfacing without external multiplexing, reducing PCB routing complexity while maintaining full 27-bit address space coverage.

Does S70GL02GT11FHB010 support common flash interface (CFI)?

Yes, the device fully implements the Common Flash Interface per JEDEC JESD68, enabling automatic detection of geometry, timing, and command sets by host BIOS or bootloader. CFI query is accessed via standard autoselect commands at base address +00h through +0Fh, returning manufacturer ID 0001h and device IDs 227Eh/2248h/2201h.

How does the 512-byte programming buffer improve system performance?

The buffer allows up to 512 bytes to be loaded into an internal latch before initiating a single embedded program operation, achieving 1.114 MBps effective write speed. This reduces host CPU intervention by ~256× compared to byte-wise programming, minimizing bus occupancy and enabling concurrent processing during flash writes.

What is the role of VSSQ and how does it differ from VSS?

VSSQ is the dedicated ground return for I/O drivers (DQ pins), electrically isolated from core ground (VSS) to suppress switching noise coupling into sensitive analog or core logic circuits. This separation maintains signal integrity during high-speed reads and meets EMI requirements for automotive and medical applications per CISPR 25 Class 5.