Infineon Technologies S70GL02GT11FHB023
- Part No.:
- S70GL02GT11FHB023
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GT11FHB023.pdf
- Description:
- IC FLASH 2GBIT PARALLEL 64FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,539
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S70GL02GT11FHB023 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory device built on 45 nm MIRRORBIT™ technology, configured as a dual-die stack of two S29GL01GT dies in a single 64-ball fortified BGA package. It delivers 110 ns random access time, 20 ns page access time, and supports ×8/×16 data bus operation with 512-byte buffer programming - enabling high-speed firmware storage in industrial control panels requiring deterministic boot latency and AEC-Q100 Grade 2 temperature resilience.
For engineers reviewing the S70GL02GT11FHB023 datasheet, S70GL02GT11FHB023 pinout, S70GL02GT11FHB023 application, or S70GL02GT11FHB023 equivalent, key selection criteria include uniform 128-KB sector erase architecture, 100,000 program-erase cycles, industrial-plus (–40°C to +105°C) operation, OTP array support, and WP#-controlled top-sector write protection - all critical for automotive ECU firmware storage and industrial HMI code retention.
Technical Context
This device implements a dual-die stacked architecture where two independent 1-Gb S29GL01GT dies share common control signals (CE#, WE#, OE#, RY/BY#) and address/data buses, with A26 used to select between dies. The memory map comprises 2048 uniform 128-KB sectors spanning 0000000h–7FFFFFFh, supporting CFI-compliant autoselect and sector-level ASP protection.
It operates from a single 2.7–3.6 V VCC supply with versatile I/O (VIO = 1.65 V to VCC), enabling interoperability with both 1.8 V and 3.3 V host controllers. Programming uses a 512-byte write buffer with suspend/resume capability, while status reporting is supported via status register, data polling, and open-drain RY/BY# output requiring external pull-up.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB) total capacity, implemented as dual 1-Gb dies for scalable firmware partitioning |
| Access Time | 110 ns random access time ensures sub-100 ns instruction fetch latency in microcontroller boot ROM applications |
| Page Access | 20 ns page access time enables burst reads at up to 50 MHz sustained throughput |
| Erase Architecture | 2048 uniform 128-KB sectors allow precise firmware update granularity without over-erasing |
| Endurance & Retention | 100,000 program-erase cycles and 20-year data retention meet automotive ECU long-life requirements |
| Temperature Range | Industrial Plus grade (–40°C to +105°C) supports under-hood automotive and factory-floor industrial use |
| Package | 64-ball LSH fortified BGA (13 mm × 11 mm) with mechanical reinforcement for thermal cycling reliability |
Pinout & Package
64-ball LSH fortified BGA package (13 mm × 11 mm), RoHS-compliant, with reinforced solder joint structure for thermal shock resistance in automotive environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (×16 mode) | Bi-directional data bus; DQ15/A-1 serves as LSB address in byte mode when BYTE# = VIL |
| A0–A26 | Address inputs | A26 selects between upper/lower 1-Gb die; A0–A25 address within selected die |
| CE#, OE#, WE# | Chip/Output/Write Enable | Standard parallel interface control signals; CE# active-low chip select enables multi-device addressing |
| RY/BY# | Open-drain Ready/Busy | Active-low during embedded algorithms; requires external pull-up; supports wired-OR for multi-device synchronization |
| WP# | Write Protect | Hardware lock for highest 128-KB sector; internal pull-up allows default unprotected state when floating |
| BYTE# | Bus width select | VIL = ×8 mode (DQ7–DQ0 active); VIH = ×16 mode (DQ15–DQ0 active) |
| VCC, VIO, VSS | Power supplies | VCC (2.7–3.6 V) powers core logic; VIO (1.65–VCC) sets I/O voltage level independently |
Key Features
| Feature | Design Value |
|---|---|
| 512-byte programming buffer | Reduces effective programming time by >8× vs. byte-by-byte writes, accelerating firmware field updates |
| Uniform 128-KB sectors | Enables atomic firmware image replacement without erasing unrelated configuration or calibration data |
| Advanced Sector Protection (ASP) | Supports volatile/non-volatile locking per sector, allowing runtime-protected bootloader regions |
| 1024-byte OTP array | Two lockable regions store immutable keys or calibration constants resistant to accidental overwrite |
| CFI compliance | Enables automatic detection and configuration by standard flash-aware bootloaders and OS drivers |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Human-Machine Interface (HMI) |
|---|---|
Use Scenario: Storing calibrated engine maps, diagnostic routines, and boot firmware in under-hood ECUs exposed to –40°C to +105°C thermal cycling. IC Role / Device Role / Timing Role: Non-volatile firmware storage with deterministic read timing and AEC-Q100 Grade 2 qualification. Use Value: 100,000-cycle endurance and 20-year retention ensure functional safety compliance over vehicle lifetime without refresh. |
Use Scenario: Holding GUI assets, localized language packs, and real-time OS kernel images in factory-floor HMIs subject to vibration and ESD events. IC Role / Device Role / Timing Role: Parallel NOR flash providing fast XIP (eXecute-In-Place) execution and robust sector-level firmware update isolation. Use Value: Uniform 128-KB sectors enable safe over-the-air updates without corrupting active UI runtime code. |
| Medical Diagnostic Imaging Console | Railway Signaling Controller |
Use Scenario: Storing FDA-cleared imaging algorithms and regulatory audit logs in portable ultrasound systems requiring traceable firmware integrity. IC Role / Device Role / Timing Role: Secure, CFI-compliant firmware repository with OTP-locked cryptographic keys and WP#-protected boot sector. Use Value: ASP and OTP features satisfy IEC 62304 software lifecycle requirements for Class C medical devices. |
Use Scenario: Hosting fail-safe control logic and SIL-4 certified firmware in wayside signaling controllers operating continuously in outdoor enclosures. IC Role / Device Role / Timing Role: High-reliability parallel flash with 64-ball fortified BGA package resisting thermal fatigue in rail infrastructure deployments. Use Value: LSH package construction and 105°C rating ensure uninterrupted operation across seasonal ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GT11FHIV10 | Single-die 1 Gb version; identical 45 nm process, timing, and feature set except half capacity and no A26 die-select | Used where firmware size < 128 MB and board space allows separate dies or lower density suffices | Select when cost-per-bit optimization outweighs need for dual-die integration and simplified routing |
| MX29GL256FHT2I-90G | Macronix 256 Mb parallel NOR; 90 ns access, 1.8 V/3.3 V I/O, but no OTP array or ASP granularity matching Infineon's implementation | Common in legacy industrial PLCs; lacks AEC-Q100 qualification and 105°C industrial-plus rating | Choose only for drop-in replacement in non-automotive designs where OTP and advanced protection are unused |
Compared with S29GL01GT11FHIV10, the S70GL02GT11FHB023 provides double density in same footprint and die-select flexibility; versus MX29GL256FHT2I-90G, it delivers superior automotive qualification, OTP security, and tighter erase granularity - making it optimal for next-gen safety-critical firmware storage.
Availability
S70GL02GT11FHB023 is available at Aetrix Electronics and suitable for automotive ECU firmware storage, industrial HMI code retention, and railway signaling controller boot memory requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S70GL02GT11FHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and secure microcontrollers, with leadership in flash memory for mission-critical systems.
The GL-T series targets high-reliability embedded applications demanding AEC-Q100 qualification, extended temperature operation, and robust firmware storage - specifically engineered for automotive, industrial, and transportation control systems.
FAQ
What is the function of the A26 pin on S70GL02GT11FHB023?
A26 serves as the die-select signal in this dual-die stacked device: when A26 = HIGH, the upper 1-Gb die (addresses 128 MB–256 MB) is accessed; when LOW, the lower 1-Gb die (0–128 MB) responds. This enables seamless 2-Gb addressing using standard 27-bit address lines without external multiplexing.
Does S70GL02GT11FHB023 support both ×8 and ×16 data bus configurations?
Yes - BYTE# pin controls bus width: driven LOW for ×8 mode (DQ7–DQ0 active, DQ15/A-1 becomes LSB address), HIGH for ×16 mode (DQ15–DQ0 active). VIO voltage range (1.65 V to VCC) ensures compatibility with 1.8 V or 3.3 V host interfaces in either configuration.
How does the WP# pin protect memory sectors?
WP# exclusively protects the highest 128-KB sector (SA2047, addresses 7FF0000h–7FFFFFFh). When WP# = LOW, program/erase operations are disabled in that sector regardless of ASP settings. Internal pull-up ensures default unprotected state if left unconnected, simplifying design-in for non-critical applications.
What packaging and handling precautions apply to the 64-ball fortified BGA?
This LSH package requires avoidance of ultrasonic cleaning and exposure above 150°C during reflow or repair. Balls E1 (DNU), C1/D1/E1/G1 (RFU), and A1/A8/H1/H8 (NC) must not be routed on PCB; E1 has internal pull-down and may be tied to VSS if needed, but never to active signals.
S70GL02GT11FHB023 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8, 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S70GL02GT11FHB023 FAQ
1.How can I place an order for S70GL02GT11FHB023 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GT11FHB023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GT11FHB023 reliable?
The price and inventory of S70GL02GT11FHB023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GT11FHB023 is usually 5 days.
3.What payment methods are accepted for S70GL02GT11FHB023?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GT11FHB023 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GT11FHB023?
S70GL02GT11FHB023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GT11FHB023 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GT11FHB023?
For technical support, including S70GL02GT11FHB023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GT11FHB023 requirements.
6.How does Aetrix verify that S70GL02GT11FHB023 is sourced from the original manufacturer or authorized distributors?
All S70GL02GT11FHB023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GT11FHB023 meets industry standards.
7.What is the process for return or replacement of S70GL02GT11FHB023?
All S70GL02GT11FHB023 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GT11FHB023, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GT11FHB023 part is unused and in its original packaging.
Return procedure for S70GL02GT11FHB023:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70GL02GT11FHB023 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

