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Infineon Technologies S70GL02GT11FHI010
- Part No.:
- S70GL02GT11FHI010
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GT11FHI010.pdf
- Description:
- IC FLASH 2GBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,060
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Product details
Overview
S70GL02GT11FHI010 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory IC using 45 nm MIRRORBIT™ technology, configured as dual-die stack of two S29GL01GT dies in a 64-ball fortified BGA package. It delivers 110 ns random access time, 20 ns page access time, and supports ×8/×16 data bus operation with 512-byte programming buffer for embedded boot code storage in industrial control systems.
For engineers reviewing the S70GL02GT11FHI010 datasheet, S70GL02GT11FHI010 pinout, S70GL02GT11FHI010 application, or S70GL02GT11FHI010 equivalent, key selection criteria include uniform 128-KB sector erase architecture, AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C), 100,000 program-erase cycles, and versatile I/O voltage range (1.65 V to VCC).
Technical Context
This device implements a dual-die stacked architecture where two 1-Gb S29GL01GT dies share common control signals (CE#, OE#, WE#, RY/BY#) and address/data buses, enabling single-package 2-Gb density without external multiplexing. Sector erase is uniform across 2048 × 128-KB sectors, each independently protected via Advanced Sector Protection (ASP) with volatile/non-volatile lock options.
The interface supports byte/word mode selection via BYTE# input, with DQ15/A-1 serving dual function: data bit in word mode or LSB address in byte mode. Status reporting uses three methods-Status Register read, data polling, and open-drain RY/BY# output-ensuring robust host synchronization during erase/program operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), realized as dual 1-Gb die stack for higher density in single BGA footprint |
| Access Time | 110 ns random access time (tACC), enabling direct execution from flash in real-time microcontroller boot sequences |
| Page Access | 20 ns page access time (tPACC), accelerating sequential instruction fetch within 16-word read buffer |
| Programming Buffer | 512-byte buffer allowing single-command multi-word programming, reducing effective write latency by ~8× vs byte-by-byte |
| Erase Endurance | 100,000 program-erase cycles per sector, supporting field firmware updates over 10+ year product lifetimes |
| Data Retention | 20-year data retention at +85°C, validated for long-term storage of calibration tables and configuration data |
| Operating Voltage | VCC = 2.7 V to 3.6 V; VIO = 1.65 V to VCC, enabling interoperability with mixed-voltage SoC interfaces |
Pinout & Package
Package: 64-ball LSH fortified BGA, 13 mm × 11 mm, RoHS-compliant, with thermal pad exposed on bottom side for enhanced heat dissipation in high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ14, DQ15/A-1 | Data I/O / LSB Address | Bidirectional data bus in ×16 mode; DQ15 becomes A-1 (LSB address) in ×8 byte mode when BYTE# = LOW |
| A0–A26 | Address Inputs | 27-bit address bus supporting full 2-Gb addressing; A26 selects upper/lower die in dual-die stack |
| CE#, OE#, WE# | Chip/Output/Write Enable | Standard parallel flash control signals; CE# enables device, OE# enables output drivers, WE# initiates write cycles |
| RY/BY# | Open-Drain Ready/Busy | Active-Low busy indicator; High-Z = ready, requires external pull-up; supports wired-OR for multi-device status monitoring |
| WP#, RESET#, BYTE# | Function Control Inputs | WP# protects top 128-KB sector; RESET# forces hardware reset; BYTE# configures ×8/×16 data width |
| VCC, VIO, VSS, VSSQ | Power Supplies | VCC = core supply (2.7–3.6 V); VIO = I/O supply (1.65–VCC); VSS/VSSQ = separate analog/digital ground pins for noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die stacked architecture | Integrates two 1-Gb S29GL01GT dies in one 64-ball BGA, eliminating interposer or stacking complexity while maintaining JEDEC-compatible command set |
| 512-byte programming buffer | Enables burst programming of up to 512 bytes per command, reducing host CPU overhead and improving firmware update throughput by >7× vs single-word writes |
| Advanced Sector Protection (ASP) | Supports independent volatile (power-on default) and non-volatile (permanent) lock bits per 128-KB sector, preventing accidental erase/write in safety-critical boot regions |
| Common Flash Interface (CFI) | Provides standardized query table at known address offset, enabling OS/bootloader auto-detection of geometry, timing, and protection features without hard-coded parameters |
| OTP array | 1024-byte one-time-programmable area with two lockable regions, suitable for storing cryptographic keys or unique device identifiers that must survive field reprogramming |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot loader and real-time control firmware in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Primary non-volatile code storage with XIP (eXecute-In-Place) capability enabled by 110 ns random access time and stable sector erase behavior. Use Value: 20-year data retention and 100K erase cycles ensure firmware integrity across 15+ years of unattended operation without refresh. | Use Scenario: Holding boot code and safety-critical sensor fusion algorithms in automotive camera ECU modules certified to AEC-Q100 Grade 2. IC Role / Device Role / Timing Role: Certified flash memory providing deterministic boot timing under –40°C to +105°C ambient conditions with RY/BY# status signaling. Use Value: Dual-die stacking eliminates external interconnects, reducing board-level failure risk while meeting ISO 26262 ASIL-B traceability requirements. |
| Medical Imaging System Configuration | Telecom Base Station BIOS |
Use Scenario: Storing calibration profiles, image processing parameters, and regulatory compliance data in MRI and CT scanner subsystems. IC Role / Device Role / Timing Role: Secure parameter storage with ASP-enabled sector locking and OTP region for DICOM-compliant device identity binding. Use Value: Non-volatile sector protection prevents unauthorized modification of FDA-required calibration settings during service or upgrade. | Use Scenario: Hosting BIOS and FPGA configuration bitstreams in carrier-grade 5G base station radios requiring hot-swap redundancy. IC Role / Device Role / Timing Role: High-reliability parallel flash with 64-ball BGA mechanical stability and 13×11 mm footprint compatible with dense RF module layouts. Use Value: Uniform 128-KB sector size simplifies dual-image failover management, enabling atomic BIOS updates without partial corruption risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GT11FHIV10 | Single-die 1-Gb version in identical 64-ball BGA; lacks dual-die stacking and A26 address line | Lower density limits use in systems requiring >128 MB boot memory; no die-select capability | Select when cost sensitivity outweighs density requirement and board space allows two discrete packages |
| N25Q256A13ESE40F | 256-Mb Quad SPI flash; serial interface, no parallel bus; 8-pin SOIC/WSON package | Requires SPI controller instead of parallel memory controller; incompatible with XIP architectures needing <120 ns access | Choose only if system already uses SPI peripherals and can tolerate slower boot performance or software-emulated XIP |
Compared with S29GL01GT11FHIV10, this part doubles density in same footprint but adds A26 routing complexity; versus N25Q256A13ESE40F, it provides deterministic low-latency parallel access essential for hard real-time boot, at the cost of higher pin count and PCB layout effort.
Availability
S70GL02GT11FHI010 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system configuration requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for S70GL02GT11FHI010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.
This device belongs to Infineon's GL-T series of high-reliability parallel NOR flash products, designed specifically for mission-critical embedded boot and firmware storage where deterministic timing, long-term data integrity, and AEC-Q100 compliance are mandatory.
FAQ
What is the purpose of the A26 address line in S70GL02GT11FHI010?
A26 serves as the die-select signal in the dual-die stack architecture. When A26 = HIGH, the upper 1-Gb die (SA1024–SA2047) is accessed; when LOW, the lower die (SA0–SA1023) responds. This enables seamless 2-Gb addressing without external multiplexing logic or additional chip-select lines.
Does S70GL02GT11FHI010 support execute-in-place (XIP) operation?
Yes - its 110 ns random access time and parallel ×16 interface meet typical XIP timing requirements for ARM Cortex-M and Power Architecture microcontrollers. The device supports standard JEDEC command sets for read, program, and erase, enabling direct instruction fetch from flash without copying to RAM.
How does the 512-byte programming buffer improve firmware update efficiency?
The buffer allows up to 512 bytes to be loaded into an internal register before initiating a single embedded program algorithm. This reduces host-side transaction overhead by eliminating 511 individual write commands, cutting total programming time by approximately 85% compared to byte-at-a-time writes in typical bootloader implementations.
Can WP# protect sectors other than the highest 128-KB sector?
No - WP# exclusively protects the topmost 128-KB sector (SA2047). Other sectors require Advanced Sector Protection (ASP) configuration via command sequences written to the status register or CFI query table. ASP supports both volatile (reset-clearable) and non-volatile (permanent) lock modes per sector.
S70GL02GT11FHI010 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8, 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (11x13)
S70GL02GT11FHI010 FAQ
1.How can I place an order for S70GL02GT11FHI010 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GT11FHI010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GT11FHI010 reliable?
The price and inventory of S70GL02GT11FHI010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GT11FHI010 is usually 5 days.
3.What payment methods are accepted for S70GL02GT11FHI010?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GT11FHI010 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GT11FHI010?
S70GL02GT11FHI010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GT11FHI010 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GT11FHI010?
For technical support, including S70GL02GT11FHI010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GT11FHI010 requirements.
6.How does Aetrix verify that S70GL02GT11FHI010 is sourced from the original manufacturer or authorized distributors?
All S70GL02GT11FHI010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GT11FHI010 meets industry standards.
7.What is the process for return or replacement of S70GL02GT11FHI010?
All S70GL02GT11FHI010 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GT11FHI010, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GT11FHI010 part is unused and in its original packaging.
Return procedure for S70GL02GT11FHI010:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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