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Infineon Technologies S70GL02GT11FHV010

Part No.:
S70GL02GT11FHV010
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
64-LBGA
Datasheet:
AetrixS70GL02GT11FHV010.pdf
Description:
IC FLASH 2GBIT PARALLEL 64FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,460

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Product details

Overview

S70GL02GT11FHV010 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory IC built on 45 nm MIRRORBIT™ technology, configured as a dual-die stack of two S29GL01GT dies in a single fortified-BGA package. It delivers 110 ns random access time, 20 ns page access time, and supports ×8/×16 data bus operation with 512-byte buffer programming-enabling high-speed firmware storage in automotive engine control units.

For engineers reviewing the S70GL02GT11FHV010 datasheet, S70GL02GT11FHV010 pinout, S70GL02GT11FHV010 application, or S70GL02GT11FHV010 equivalent, key selection criteria include AEC-Q100 Grade 2/3 qualification, 128-KB uniform sector erase architecture, OTP array support, and VIO range of 1.65 V to VCC for mixed-voltage system interfacing.

Technical Context

This device implements a dual-die stacked architecture where two 1-Gb S29GL01GT dies share common control signals (CE#, OE#, WE#, RESET#) and operate under unified command set execution. Address lines A0–A26 span the full 2-Gb address space, with A26 distinguishing die selection in high-address regions.

It supports three status monitoring methods-Status Register polling, data polling, and open-drain RY/BY# output-and integrates Advanced Sector Protection (ASP) with volatile/non-volatile lock modes per 128-KB sector plus dedicated 1024-byte OTP array with two lockable regions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (256 MB), organized as 2048 uniform 128-KB sectors
Access Time110 ns random access, 20 ns page access - enables fast instruction fetch in boot ROM applications
Supply VoltageVCC = 2.7 V to 3.6 V; VIO = 1.65 V to VCC - supports interface with 1.8 V or 3.3 V host controllers
Programming Buffer512-byte write buffer - reduces effective programming time by up to 256× vs. byte-by-byte writes
Data Retention20 years at +85°C - validated for long-life automotive ECU firmware storage
Endurance100,000 program/erase cycles per sector - suitable for field-upgradable calibration tables
Temperature GradeAEC-Q100 Grade 2 (–40°C to +105°C) - qualified for powertrain and ADAS module deployment

Pinout & Package

Package: 64-ball LSH fortified BGA, 13 mm × 11 mm, RoHS-compliant, with thermal pad (VSSQ) and reinforced solder joint structure for automotive reliability.

Pin/TerminalCircuit RoleDesign Meaning
DQ0–DQ15Data I/O (×16 mode)Bidirectional data bus; DQ15/A-1 serves as LSB address in byte mode when BYTE# = VIL
A0–A26Address inputs27-bit address bus supporting full 2-Gb linear addressing; A26 selects upper die in dual-die map
CE#, OE#, WE#Control enablesStandard parallel flash control trio; CE# active-low chip select enables device decoding in multi-chip systems
RY/BY#Open-drain status outputIndicates active programming/erase (VIL) or ready state (High-Z); requires external pull-up for logic-level detection
WP#Hardware write protectLocks highest 128-KB sector regardless of ASP settings; internal pull-up ensures default-unlocked behavior when floating
RESET#Asynchronous reset inputForces device into standby read mode; used during power-on initialization or error recovery sequences
VIOI/O supplyIndependent voltage rail (1.65–3.6 V) decouples I/O signaling from core logic, enabling mixed-voltage SoC interfacing

Key Features

FeatureDesign Value
Dual-die stacked architectureTwo 1-Gb S29GL01GT dies in one package deliver 2-Gb density without increasing PCB footprint or signal routing complexity
512-byte programming bufferEnables burst programming of full pages, reducing total firmware update time by >90% compared to single-word writes
Advanced Sector Protection (ASP)Per-sector volatile/non-volatile lock control allows selective firmware partitioning-e.g., locking bootloader while permitting application updates
1024-byte OTP arrayTwo independently lockable regions store immutable keys, calibration constants, or security certificates resistant to field reprogramming
AEC-Q100 Grade 2 qualificationValidated for operation from –40°C to +105°C with full electrical specs maintained-meets requirements for engine bay and transmission control modules

Applications

Automotive Powertrain ControlIndustrial PLC Firmware Storage

Use Scenario: Storing calibrated fuel injection maps and real-time diagnostic code in diesel engine control units.

IC Role / Device Role / Timing Role: Boot ROM and persistent firmware storage with deterministic 110 ns read latency for hard real-time instruction fetch.

Use Value: AEC-Q100 Grade 2 rating ensures reliable operation at 105°C ambient; 20-year data retention prevents corruption over vehicle lifetime.

Use Scenario: Holding ladder logic programs and I/O configuration data in modular programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile program memory accessed via parallel bus from ARM Cortex-M7 host MCU during cold start.

Use Value: 128-KB uniform sectors simplify firmware partitioning; WP# pin enables hardware-level protection of critical safety routines.

Medical Imaging System BIOSAvionics Display Module Boot Code

Use Scenario: Hosting boot firmware and FPGA configuration bitstreams in MRI scanner mainboards requiring zero-failure field updates.

IC Role / Device Role / Timing Role: Primary boot device with CFI-compliant interface for BIOS initialization and secure image verification.

Use Value: Common Flash Interface (CFI) support enables standardized driver integration; OTP array stores cryptographic root keys for secure boot chain.

Use Scenario: Storing certified display controller firmware in DO-178C-compliant cockpit displays with dual-redundant memory paths.

IC Role / Device Role / Timing Role: Redundant boot memory mapped to dual-core TMS570LS3137 host, with RY/BY# shared across both devices for synchronized status reporting.

Use Value: Open-drain RY/BY# allows wired-OR connection of multiple devices; 100,000-cycle endurance supports periodic DO-254 validation updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel NOR flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
S29GL01GT11FHV010Single-die 1-Gb version; identical timing, package, and command set but half capacitySuitable for cost-sensitive designs where 1-Gb suffices; lacks dual-die stacking and A26-based die selectSelect when board layout or BOM simplification prioritizes single-die sourcing and lower density meets functional needs
MX29GL256FHTI-90GMacronix 2-Gb parallel NOR; 90 ns random access (slower than 110 ns), no AEC-Q100 qualificationTargeted at industrial/commercial systems only; lacks automotive temperature grade and OTP arrayChoose only for non-automotive applications where extended temperature operation and secure OTP are not required

Compared with S29GL01GT11FHV010, this part doubles density without changing footprint or interface; versus MX29GL256FHTI-90G, it adds AEC-Q100 Grade 2 compliance and OTP security-critical for safety-critical firmware storage.

Availability

S70GL02GT11FHV010 is available at Aetrix Electronics and suitable for automotive powertrain control, industrial PLC firmware storage, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.

Supply support for S70GL02GT11FHV010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and trusted security solutions.

This device belongs to the GL-T series of high-reliability parallel NOR flash memories designed specifically for automotive and industrial applications demanding AEC-Q100 qualification, long data retention, and robust sector protection.

FAQ

What is the function of the BYTE# pin on S70GL02GT11FHV010?

The BYTE# pin configures the data bus width: when pulled low, the device operates in byte mode (DQ7–DQ0 active, DQ15/A-1 becomes LSB address); when high, it operates in word mode (DQ15–DQ0 active). This enables flexible interface design with 8-bit or 16-bit host processors without external multiplexing logic.

Does S70GL02GT11FHV010 support Common Flash Interface (CFI)?

Yes, the device fully supports CFI per JEDEC JESD68 standard. It provides standardized query tables accessible via specific address/command sequences, enabling OS-agnostic flash drivers and automated identification in bootloader environments-critical for scalable firmware development across multiple platforms.

How is sector protection implemented on this device?

Sector protection uses Advanced Sector Protection (ASP) with both volatile (SRAM-based) and non-volatile (flash-based) lock bits per 128-KB sector. The WP# pin provides independent hardware lock for the highest sector. Protection states persist through power cycles when non-volatile mode is enabled, allowing secure separation of bootloader and application partitions.

What is the purpose of the RY/BY# pin and how should it be used?

RY/BY# is an open-drain output indicating device readiness: low during active programming/erase, high-impedance when idle or ready. It requires an external pull-up resistor (typically 4.7 kΩ to VIO) and supports wired-OR connection across multiple devices-enabling synchronized status monitoring in multi-flash memory systems.

S70GL02GT11FHV010 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
GL-T
Package/Case:
64-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
2Gbit
Memory Organization:
256M x 8, 128M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
110 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
64-FBGA (11x13)

S70GL02GT11FHV010 FAQ

1.How can I place an order for S70GL02GT11FHV010 through Aetrix?

Please submit a Request for Quotation (RFQ) for S70GL02GT11FHV010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S70GL02GT11FHV010 reliable?

The price and inventory of S70GL02GT11FHV010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GT11FHV010 is usually 5 days.

3.What payment methods are accepted for S70GL02GT11FHV010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GT11FHV010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S70GL02GT11FHV010?

S70GL02GT11FHV010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S70GL02GT11FHV010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S70GL02GT11FHV010?

For technical support, including S70GL02GT11FHV010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GT11FHV010 requirements.

6.How does Aetrix verify that S70GL02GT11FHV010 is sourced from the original manufacturer or authorized distributors?

All S70GL02GT11FHV010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GT11FHV010 meets industry standards.

7.What is the process for return or replacement of S70GL02GT11FHV010?

All S70GL02GT11FHV010 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GT11FHV010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S70GL02GT11FHV010 part is unused and in its original packaging.

Return procedure for S70GL02GT11FHV010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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