My Inquiry
My Account
Infineon Technologies S70GL02GT11FHV020
- Part No.:
- S70GL02GT11FHV020
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GT11FHV020.pdf
- Description:
- IC FLASH 2GBIT CFI 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,836
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S70GL02GT11FHV020 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory IC built on 45-nm MIRRORBIT™ technology, featuring 110 ns random access time, 20 ns page access time, and uniform 128-KB sectors across 2048 sectors. It operates from a single 2.7–3.6 V supply, supports ×8/×16 data bus width, and integrates a 512-byte programming buffer for accelerated write throughput-used in automotive infotainment boot storage and industrial PLC firmware retention.
For engineers reviewing the S70GL02GT11FHV020 datasheet, S70GL02GT11FHV020 pinout, S70GL02GT11FHV020 application, or S70GL02GT11FHV020 equivalent, key selection factors include its fortified-BGA package compatibility, AEC-Q100 Grade 2/3 qualification, dual-die stack architecture, OTP array support, and sector-level ASP protection with WP#-controlled highest-sector lock.
Technical Context
This device implements a dual-die stacked architecture composed of two S29GL01GT 1-Gb dies in a single 64-ball LSH fortified-BGA package, enabling 2-Gb density without increasing footprint. Its parallel interface uses address lines A0–A26 and bidirectional DQ0–DQ15 with BYTE#-controlled bus width selection.
The embedded algorithm engine supports suspend/resume during program/erase, status reporting via RY/BY# open-drain output and status register polling, and advanced sector protection (ASP) with volatile/non-volatile locking per sector plus dedicated 1024-byte OTP array with two lockable regions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), realized as dual 1-Gb S29GL01GT dies in monolithic package |
| Access Time | 110 ns random access (tACC), 20 ns page access (tPACC) at VIO = VCC = 3.0 V |
| Bus Width | Configurable ×8 or ×16 via BYTE# input; DQ15/A-1 serves dual role in byte mode |
| Erase Architecture | Uniform 128-KB sectors (2048 total); no boot-block or variable sector sizes |
| Endurance & Retention | 100,000 program/erase cycles; guaranteed 20-year data retention at ≤85°C |
| Operating Temp | Industrial Plus (–40°C to +105°C) and Automotive AEC-Q100 Grade 2 qualified |
| Supply Range | Single VCC: 2.7–3.6 V for read/program/erase; VIO: 1.65 V to VCC for I/O flexibility |
Pinout & Package
Package: 64-ball LSH fortified ball grid array (BGA), 13 mm × 11 mm, RoHS-compliant, with enhanced mechanical robustness for automotive and industrial reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Bidirectional data I/O | Active in ×16 mode; DQ7–DQ0 active in ×8 mode with DQ15/A-1 repurposed as A1 |
| A0–A26 | Address inputs | 27-bit addressing supports full 2-Gb linear map; A26 enables highest sector selection |
| CE#, OE#, WE# | Control enables | Standard parallel flash control signals; CE# selects device, OE# enables output drivers, WE# controls direction |
| RY/BY# | Open-drain status output | Active-low busy signal; high-impedance when ready; requires external pull-up; supports multi-device ready detection |
| WP# | Hardware write protect | Locks only the highest 128-KB sector regardless of ASP settings; internal pull-up, active-low |
| RESET# | Hardware reset input | Asynchronous reset of command logic to standby state; does not erase or power-cycle memory contents |
| BYTE# | Bus width select | Low = ×8 mode (DQ7–DQ0 active); High = ×16 mode (DQ15–DQ0 active) |
| VCC, VIO, VSS | Power supplies | VCC (2.7–3.6 V) powers core; VIO (1.65 V to VCC) powers I/O; separate VSSQ for flash core ground |
Key Features
| Feature | Design Value |
|---|---|
| 512-byte programming buffer | Enables burst programming of up to 512 bytes per command, reducing effective write time vs. byte-by-byte writes |
| Dual-die stacked architecture | Delivers 2-Gb density in same 64-ball BGA footprint as 1-Gb S29GL01GT, preserving PCB layout compatibility |
| Advanced Sector Protection (ASP) | Per-sector volatile/non-volatile lock control, independent of WP# which only protects top sector |
| 1024-byte OTP array | Two separately lockable regions for secure boot code, calibration data, or device-specific configuration storage |
| Suspend/Resume capability | Halts ongoing program or erase operations to service high-priority reads, then resumes without data loss |
Applications
| Automotive Instrument Cluster | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Storing calibrated gauge graphics, driver alert logic, and OTA update staging area in digital dashboards. IC Role / Device Role / Timing Role: Parallel NOR flash serving as nonvolatile boot and application code storage with deterministic 110 ns read latency. Use Value: AEC-Q100 Grade 2 qualification ensures operation at 105°C ambient; 20-year retention prevents field corruption of safety-critical display assets. | Use Scenario: Holding ladder logic firmware, I/O mapping tables, and configuration parameters in programmable logic controllers. IC Role / Device Role / Timing Role: Primary firmware storage accessed directly by ARM Cortex-M7 MCU via parallel bus during cold start and runtime updates. Use Value: Uniform 128-KB sectors simplify field firmware patching; suspend/resume allows real-time I/O servicing during background flash updates. |
| Medical Imaging Boot Loader | Avionics Display System |
Use Scenario: Hosting certified boot loader and diagnostic self-test routines in MRI/X-ray console mainboards. IC Role / Device Role / Timing Role: Secure, tamper-resistant code execution source with OTP-locked bootloader integrity checks. Use Value: Dedicated 1024-byte OTP array with dual lock regions stores cryptographic keys and version signatures, preventing unauthorized firmware modification. | Use Scenario: Storing flight-critical display fonts, symbology libraries, and synthetic vision terrain data in cockpit multifunction displays. IC Role / Device Role / Timing Role: High-reliability parallel flash providing deterministic read access for real-time rendering pipelines. Use Value: 45-nm MIRRORBIT™ process ensures low leakage current and stable operation under extended thermal cycling; RY/BY# enables precise timing coordination across multiple display modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S29GL01GT11FHIV10 | Single-die 1-Gb version; identical pinout, timing, and feature set except density and sector count | Used where 128 MB suffices; lacks dual-die stacking and 2-Gb address space | Select when board space allows two devices or density requirement is ≤1 Gb |
| Infineon S70GL02GT11FHI020 | Same die stack and specs but Industrial grade (–40°C to +85°C) instead of Industrial Plus (+105°C) | Targeted at non-extended temperature industrial systems; lower thermal derating margin | Choose for cost-sensitive industrial designs without extended temp requirements |
Compared with S29GL01GT11FHIV10, this part doubles density in same footprint; compared with S70GL02GT11FHI020, it adds +105°C operation and AEC-Q100 Grade 2 compliance-critical for under-hood automotive and high-ambient industrial deployments.
Availability
S70GL02GT11FHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC firmware storage, medical imaging boot loaders, and avionics display systems requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S70GL02GT11FHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and nonvolatile memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.
This device belongs to Infineon's GL-T series of high-density parallel NOR flash, designed specifically for mission-critical embedded systems demanding AEC-Q100 qualification, deterministic timing, and long-term data integrity in harsh environments.
FAQ
Is S70GL02GT11FHV020 pin-compatible with S29GL01GT-based designs?
Yes-S70GL02GT11FHV020 uses the identical 64-ball LSH fortified-BGA footprint and signal mapping as the S29GL01GT, including matching A0–A25, DQ0–DQ15, and control pin assignments. The addition of A26 and dual-die internal routing is transparent to the host interface, enabling drop-in replacement where board layout and timing margins accommodate the higher density.
What is the function of the RY/BY# pin and how must it be interfaced?
RY/BY# is an open-drain ready/busy indicator: pulled low during active program/erase operations and high-impedance when idle or ready. It requires an external pull-up resistor (typically 4.7 kΩ to VIO) for proper logic-level detection. Multiple devices can share a wired-OR RY/BY# bus to monitor collective readiness in multi-flash systems.
Does WP# protect all sectors or only specific ones?
WP# exclusively protects the highest-address 128-KB sector (SA2047), regardless of Advanced Sector Protection (ASP) settings. This provides hardware-enforced write lock for critical boot or configuration data, independent of software-controlled sector locks. All other sectors remain subject to ASP configuration and command-based protection.
How is the 2-Gb capacity physically implemented?
The S70GL02GT11FHV020 integrates two identical S29GL01GT 1-Gb dies in a monolithic 64-ball BGA package. Address bits A0–A25 access the lower die; A26 acts as die-select, enabling access to the upper die's mirrored address space. This dual-die stack achieves 2-Gb density without altering pin count or timing behavior from the host perspective.
S70GL02GT11FHV020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- CFI
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (13x11)
S70GL02GT11FHV020 FAQ
1.How can I place an order for S70GL02GT11FHV020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GT11FHV020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GT11FHV020 reliable?
The price and inventory of S70GL02GT11FHV020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GT11FHV020 is usually 5 days.
3.What payment methods are accepted for S70GL02GT11FHV020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GT11FHV020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GT11FHV020?
S70GL02GT11FHV020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GT11FHV020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GT11FHV020?
For technical support, including S70GL02GT11FHV020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GT11FHV020 requirements.
6.How does Aetrix verify that S70GL02GT11FHV020 is sourced from the original manufacturer or authorized distributors?
All S70GL02GT11FHV020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GT11FHV020 meets industry standards.
7.What is the process for return or replacement of S70GL02GT11FHV020?
All S70GL02GT11FHV020 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GT11FHV020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GT11FHV020 part is unused and in its original packaging.
Return procedure for S70GL02GT11FHV020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70GL02GT11FHV020 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
