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Infineon Technologies S70GL02GT12FHIV23
- Part No.:
- S70GL02GT12FHIV23
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 64-LBGA
- Datasheet:
-
S70GL02GT12FHIV23.pdf
- Description:
- IC FLASH 2GBIT PARALLEL 64FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,986
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Product details
Overview
S70GL02GT12FHIV23 from Infineon is a 2 Gb (256 MB) parallel NOR flash memory IC using 45 nm MIRRORBIT™ technology, configured as dual-die stack of two S29GL01GT dies in a 64-ball fortified BGA package. It delivers 110 ns random access time, 20 ns page access time, and supports ×8/×16 data bus operation with 512-byte programming buffer for embedded boot code storage in industrial control systems.
For engineers reviewing the S70GL02GT12FHIV23 datasheet, S70GL02GT12FHIV23 pinout, S70GL02GT12FHIV23 application, or S70GL02GT12FHIV23 equivalent, key selection criteria include uniform 128-KB sector erase architecture, AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C), 100,000 program-erase cycles, and versatile I/O voltage range (1.65 V to VCC).
Technical Context
This device implements a dual-die stacked architecture where two 1-Gb S29GL01GT dies share common control signals (CE#, OE#, WE#, RESET#) and address lines A0–A25, with A26 selecting between dies. The memory map comprises 2048 uniform 128-KB sectors, each erasable independently.
It supports three status monitoring methods-Status Register polling, data polling, and open-drain RY/BY# output-and includes Advanced Sector Protection (ASP) with volatile/non-volatile locking per sector plus a dedicated 1024-byte OTP array with two lockable regions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 2 Gb (256 MB) total capacity, implemented as dual 1-Gb die stack |
| Access time | 110 ns random access time (tACC), enabling fast instruction fetch in boot ROM applications |
| Page access | 20 ns page access time (tPACC), accelerating sequential read performance |
| Programming buffer | 512-byte write buffer, reducing effective programming time vs. byte-by-byte writes |
| Sector size | Uniform 128-KB sectors (2048 total), simplifying firmware partitioning and OTA update design |
| Endurance | 100,000 program-erase cycles per sector, supporting field-upgradable embedded systems |
| Data retention | 20-year data retention at +85°C, ensuring long-term reliability in unpowered storage |
Pinout & Package
Package: 64-ball LSH fortified BGA, 13 mm × 11 mm, RoHS-compliant, with special handling requirements (no ultrasonic cleaning; max 150°C exposure).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ14, DQ15/A-1 | Data I/O / LSB address in byte mode | 16-bit bidirectional data bus; DQ15 doubles as A-1 address input when BYTE# = low |
| A0–A25, A26 | Address inputs | A0–A25 select within 128-KB sector; A26 selects upper/lower 1-Gb die in stack |
| CE#, OE#, WE# | Chip, Output, Write Enable controls | Standard parallel interface timing control; all active-low asynchronous signals |
| RY/BY# | Open-drain ready/busy indicator | Signals active programming/erase; requires external pull-up; supports multi-device ready detection |
| WP#, RESET#, BYTE# | Function control inputs | WP# protects top 128-KB sector; RESET# forces standby state; BYTE# configures ×8/×16 bus width |
| VCC, VIO, VSS, VSSQ | Power and ground supplies | VCC = 2.7–3.6 V core supply; VIO = 1.65–VCC I/O supply; separate VSSQ for I/O ground improves noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die stacked architecture | Two 1-Gb S29GL01GT dies in single package enable 2-Gb density without board area penalty |
| Versatile I/O voltage support | VIO range 1.65 V to VCC allows direct interfacing with 1.8 V, 2.5 V, or 3.3 V controllers |
| Advanced Sector Protection (ASP) | Volatile and non-volatile locking per sector prevents accidental firmware corruption during field updates |
| Dedicated OTP array | 1024-byte one-time-programmable region with two lockable sections for secure key or calibration storage |
| Three status reporting methods | Status register, data polling, and RY/BY# output provide flexible system-level readiness monitoring |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing boot loader and real-time OS firmware in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: Parallel NOR flash used as XIP (eXecute-In-Place) boot ROM, accessed via 16-bit bus with 110 ns tACC for deterministic startup. Use Value: 20-year data retention and 100K endurance ensure firmware integrity over 15+ year equipment lifecycle without refresh. | Use Scenario: Holding safety-critical boot code and sensor calibration data in automotive camera ECU modules certified to AEC-Q100 Grade 2. IC Role / Device Role / Timing Role: Primary boot memory mapped to processor's memory space; supports RY/BY#-driven interrupt on erase completion for fail-safe update sequencing. Use Value: AEC-Q100 Grade 2 qualification (–40°C to +105°C) and ASP-enabled sector locking meet ISO 26262 ASIL-B requirements. |
| Medical Imaging System BIOS | Telecom Base Station Configuration |
Use Scenario: Storing diagnostic firmware and hardware configuration tables in MRI and CT scanner mainboards requiring high reliability and audit traceability. IC Role / Device Role / Timing Role: Non-volatile storage for BIOS and FPGA configuration bitstreams; accessed via CE#/OE# controlled parallel interface during power-on self-test. Use Value: Uniform 128-KB sectors simplify secure firmware rollback and versioned patch management across regulatory-mandated device revisions. | Use Scenario: Retaining radio parameter profiles and encryption keys in 5G macro base station remote radio units exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Configuration store accessed infrequently but requiring guaranteed read stability under thermal stress; leverages VIO flexibility for mixed-voltage backplane integration. Use Value: 1.65–3.6 V VIO range enables direct connection to 1.8 V FPGA I/O banks while maintaining full 110 ns access performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL01GT12FHIV20 | Single-die 1 Gb device in same 64-ball BGA; lacks A26 and dual-die addressing | Lower density limits use in boot ROMs requiring >128 MB; no die-select capability | Select when cost-sensitive designs require only 1 Gb and do not need dual-die features |
| MX29GL256FHI-11G | 2 Gb Macronix device; 110 ns tACC but uses standard BGA (not fortified); no AEC-Q100 grade | Not qualified for automotive; lacks ASP and OTP array; different CFI command set | Choose for industrial-only applications where automotive qualification and advanced protection are unnecessary |
Compared with S29GL01GT12FHIV20, S70GL02GT12FHIV23 doubles density and adds die-select addressing; versus MX29GL256FHI-11G, it provides AEC-Q100 Grade 2 qualification, fortified BGA mechanical robustness, and integrated sector protection-critical for safety-critical boot memory.
Availability
S70GL02GT12FHIV23 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended product lifecycles.
Supply support for S70GL02GT12FHIV23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions for mission-critical applications.
The GL-T series targets high-reliability embedded systems needing parallel NOR flash with AEC-Q100 qualification, extended temperature operation, and advanced data protection-designed specifically for automotive, industrial, and medical boot memory roles.
FAQ
What is the function of the A26 pin on S70GL02GT12FHIV23?
A26 serves as the die-select signal in the dual-die stack architecture. When A26 = high, the upper 1-Gb die (addresses 0x4000000–0x7FFFFFF) is selected; when low, the lower 1-Gb die (0x0000000–0x3FFFFFF) responds. This enables seamless 2-Gb addressing without external multiplexing logic.
Does S70GL02GT12FHIV23 support both ×8 and ×16 data bus widths?
Yes, via the BYTE# input pin. When BYTE# = low, the device operates in ×8 mode: DQ7–DQ0 are active data lines and DQ15 functions as A-1 address input. When BYTE# = high, it operates in ×16 mode with full DQ0–DQ15 data bus utilization-enabling flexible interface design with 8-bit or 16-bit host processors.
How does the WP# pin protect memory sectors?
WP# protects only the highest-address 128-KB sector (SA2047). When WP# = low, program and erase operations are disabled in that sector regardless of ASP settings. The pin has an internal pull-up, so leaving it unconnected defaults to unprotected state. This provides hardware-level write protection independent of software-controlled sector locks.
What thermal handling precautions apply to the fortified BGA package?
The 64-ball LSH fortified BGA requires avoidance of ultrasonic cleaning, which may damage internal die attach or wire bonds. During reflow or repair, package body temperature must not exceed 150°C for prolonged periods to prevent delamination or solder joint degradation. PCB layout must follow Infineon's recommended pad geometry and stencil design for reliable solder joint formation.
S70GL02GT12FHIV23 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 64-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8, 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 120 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 64-FBGA (11x13)
S70GL02GT12FHIV23 FAQ
1.How can I place an order for S70GL02GT12FHIV23 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70GL02GT12FHIV23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70GL02GT12FHIV23 reliable?
The price and inventory of S70GL02GT12FHIV23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70GL02GT12FHIV23 is usually 5 days.
3.What payment methods are accepted for S70GL02GT12FHIV23?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70GL02GT12FHIV23 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70GL02GT12FHIV23?
S70GL02GT12FHIV23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70GL02GT12FHIV23 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70GL02GT12FHIV23?
For technical support, including S70GL02GT12FHIV23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70GL02GT12FHIV23 requirements.
6.How does Aetrix verify that S70GL02GT12FHIV23 is sourced from the original manufacturer or authorized distributors?
All S70GL02GT12FHIV23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70GL02GT12FHIV23 meets industry standards.
7.What is the process for return or replacement of S70GL02GT12FHIV23?
All S70GL02GT12FHIV23 units undergo pre-shipment inspection (PSI). If there is an issue with S70GL02GT12FHIV23, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70GL02GT12FHIV23 part is unused and in its original packaging.
Return procedure for S70GL02GT12FHIV23:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70GL02GT12FHIV23 Tags
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