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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies S70KL1282DPBHA023

Name: S70KL1282DPBHA023
Brand: Infineon Technologies
SKU: S70KL1282DPBHA023
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S70KL1282DPBHA023

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 24-VBGA

Datasheet:: S70KL1282DPBHA023.pdf

Description:: IC PSRAM 128MBIT HYPERBUS 24FBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

S70KL1282DPBHA023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMI displays requiring deterministic latency and low-power standby.

For engineers reviewing the S70KL1282DPBHA023 datasheet, S70KL1282DPBHA023 pinout, S70KL1282DPBHA023 application, or S70KL1282DPBHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe phase alignment, burst length configuration (16–128 bytes), hybrid sleep mode entry timing, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. Its internal refresh controller eliminates host-managed refresh cycles, presenting static RAM semantics to the host while maintaining dynamic cell efficiency.

HYPERBUS™ operation uses center-aligned command/address transfers on DQ[7:0], with bidirectional RWDS serving as read data strobe (phase-shifted for DCARS), write mask, and refresh latency indicator. Clock support includes optional differential CK/CK# (12-signal mode) or single-ended CK (11-signal mode).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	128 Mb (2 × 64 Mb stacked die), enabling compact external memory expansion without doubling interface width
Interface Standard	HYPERRAM™-compliant HYPERBUS™ DDR, reducing signal count vs. parallel NOR/SDRAM while sustaining 400 MBps throughput
Max Clock Rate	200 MHz (both 1.8 V and 3.0 V supplies), defining maximum sustained bandwidth and constraining PCB trace length matching
Burst Lengths	Configurable wrapped bursts: 16/32/64/128 bytes - directly maps to cache line sizes and DMA transfer granularity
Power Modes	Hybrid sleep (330 µA @ 2.0 V) and deep power down (360 µA @ 3.6 V) - enable ultra-low idle current in battery-backed systems
Operating Temp	AEC-Q100 Grade 2 (–40°C to +105°C), qualifying for under-hood automotive applications and extended-temperature industrial control
Access Time	tACC ≤ 35 ns - sets minimum initial latency budget for host controller timing closure

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3 (MSL3).

Pin/Terminal	Circuit Role	Design Meaning
DQ[7:0]	Bi-directional data bus	Carries command, address, and data; requires matched-length routing and controlled impedance (50 Ω) for DDR integrity
CK / CK#	Differential clock input	Defines sampling edge for all CA/data transfers; CK# enables noise rejection in high-EMI environments
RWDS	Bi-directional read/write strobe	Indicates refresh latency at transaction start; acts as read strobe (DCARS-phase-shifted) or write mask during data phase
CS#	Chip select (active low)	Asserted to initiate all transactions; deassertion terminates burst and triggers internal state cleanup
RESET#	Hardware reset input	Asynchronous active-low signal forcing device into known power-on-reset state, independent of supply ramp timing

Key Features

Feature	Design Value
Self-refresh DRAM core	Eliminates host refresh overhead and timing constraints, enabling seamless integration with MCU memory controllers lacking DRAM support
DCARS-enabled RWDS	Phase-shifts RWDS by ½ clock cycle during reads to center strobe transitions within data eye, improving setup/hold margin at 200 MHz
Configurable drive strength	Allows optimization of signal integrity and EMI across varying trace lengths and load conditions without external termination
Partial array refresh	Supports 1/8, 1/4, or 1/2 array refresh - reduces power and latency impact when full refresh is unnecessary
Stacked-die architecture	Delivers 128 Mb density in 24-ball FBGA footprint, avoiding larger packages or multi-chip modules

Applications

Automotive Instrument Clusters

Industrial HMI Displays

Use Scenario: Real-time rendering of vector-based gauges and animated alerts in digital dashboards.

IC Role / Device Role / Timing Role: External frame buffer memory interfaced to MCU's HYPERBUS™ controller, providing low-latency pixel data access with deterministic tACC ≤ 35 ns.

Use Value: Enables 1280×720 display updates at 60 Hz using linear 128-byte bursts, while hybrid sleep mode cuts idle current to 330 µA during screen dimming.

Use Scenario: Local GUI storage and firmware update staging in panel-mounted PLC interfaces.

IC Role / Device Role / Timing Role: Non-volatile-equivalent working memory for ARM Cortex-M7-based HMI SoC, accessed via HYPERBUS™ with no refresh management required.

Use Value: Reduces BOM count by replacing parallel NOR + SRAM combo; 24-ball FBGA simplifies layout versus 48-pin TSOP packages.

ADAS Camera Preprocessing

Medical Imaging Edge Nodes

Use Scenario: Temporary buffering of raw Bayer sensor data before ISP pipeline ingestion.

IC Role / Device Role / Timing Role: High-throughput streaming memory supporting 200 MHz DDR transfers, synchronized via CK/CK# to minimize jitter-induced pixel skew.

Use Value: Delivers 400 MBps sustained bandwidth for 12-bit 4K@30fps streams; DCARS alignment ensures reliable RWDS capture at temperature extremes (–40°C to +105°C).

Use Scenario: DICOM image caching and DICOM header metadata storage in portable ultrasound devices.

IC Role / Device Role / Timing Role: Low-power PSRAM backing store for ARM Cortex-A53 application processor, entering deep power down (360 µA) between scan sequences.

Use Value: Meets IEC 62304 Class C battery life requirements; AEC-Q100 Grade 2 rating validates reliability under medical-grade thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY15B104QN-PSOC	4 Mb Quad SPI FRAM, 108 MHz max, no refresh, but lower density and bandwidth	Limited to small code/data buffers; lacks HYPERBUS™ timing compatibility and burst flexibility	Select only for <5 MB storage needs where instant-write non-volatility outweighs bandwidth
IS66WV1288GBLL-150B1	128 Mb parallel SRAM, 150 MHz async, 44-pin TSOP, higher pin count and power	Requires full address/data bus and separate control lines; no built-in refresh logic	Choose only if legacy design lacks HYPERBUS™ controller or requires asynchronous interface

Compared with CY15B104QN-PSOC and IS66WV1288GBLL-150B1, S70KL1282DPBHA023 uniquely balances 128 Mb density, 400 MBps DDR bandwidth, HYPERBUS™ pin efficiency, and automotive-grade power modes - making it optimal for new designs targeting compact, high-performance embedded memory.

Availability

S70KL1282DPBHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, ADAS camera preprocessing, and medical imaging edge nodes requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

S70KL1282DPBHA023 belongs to Infineon's HYPERRAM™ product line, engineered specifically for MCU/SoC systems needing high-speed, low-pin-count external memory with deterministic latency and automotive-grade reliability.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS serves three distinct roles: (1) At transaction start, its output indicates refresh latency duration; (2) During reads, it functions as a phase-shifted read data strobe (DCARS) aligned to center the data eye; (3) During writes, it acts as a byte-level write mask, allowing selective updating of DQ[7:0] lanes without full-burst overwrite.

Does S70KL1282DPBHA023 require external refresh commands from the host controller?

No. The device contains autonomous self-refresh logic that executes periodic row refreshes internally. The host only issues standard HYPERBUS™ read/write commands; no refresh scheduling, counters, or timing windows are required in firmware or hardware design.

Can both 64 Mb dies operate simultaneously in active mode?

No. While the device integrates two 64 Mb dies in a single 24-ball FBGA, the HYPERBUS™ interface and control logic are shared. Only one die is accessible per transaction; interleaved access across dies is not supported, and hybrid sleep/deep power down modes apply to one die at a time.

What are the voltage requirements for VCC and VCCQ in automotive-grade operation?

For AEC-Q100 Grade 2 (–40°C to +105°C), S70KL1282DPBHA023 supports either 1.8 V ±0.15 V (VCC/VCCQ) or 3.0 V ±0.3 V (VCC/VCCQ). Both supplies must be at the same nominal voltage; mixed-voltage operation (e.g., 1.8 V VCC + 3.0 V VCCQ) is not permitted per datasheet Section 9.4.2.

S70KL1282DPBHA023 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HYPERRAM™ KL

Package/Case:: 24-VBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: PSRAM

Technology:: PSRAM (Pseudo SRAM)

Memory Size:: 128Mbit

Memory Organization:: 16M x 8

Memory Interface:: HyperBus

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: 36ns

Access Time:: 36 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 24-FBGA (6x8)

S70KL1282DPBHA023 FAQ

1.How can I place an order for S70KL1282DPBHA023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S70KL1282DPBHA023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S70KL1282DPBHA023 reliable?

The price and inventory of S70KL1282DPBHA023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70KL1282DPBHA023 is usually 5 days.

3.What payment methods are accepted for S70KL1282DPBHA023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70KL1282DPBHA023 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S70KL1282DPBHA023?

S70KL1282DPBHA023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S70KL1282DPBHA023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S70KL1282DPBHA023?

For technical support, including S70KL1282DPBHA023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70KL1282DPBHA023 requirements.

6.How does Aetrix verify that S70KL1282DPBHA023 is sourced from the original manufacturer or authorized distributors?

All S70KL1282DPBHA023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70KL1282DPBHA023 meets industry standards.

7.What is the process for return or replacement of S70KL1282DPBHA023?

All S70KL1282DPBHA023 units undergo pre-shipment inspection (PSI). If there is an issue with S70KL1282DPBHA023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S70KL1282DPBHA023 part is unused and in its original packaging.

Return procedure for S70KL1282DPBHA023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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