Infineon Technologies S70KL1282DPBHB020

Overview

S70KL1282DPBHB020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, supporting 1.8 V/3.0 V I/O and core supply, 200 MHz DDR clock, 400 MBps throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where SRAM-like simplicity and DRAM density are required.

For engineers reviewing the S70KL1282DPBHB020 datasheet, S70KL1282DPBHB020 pinout, S70KL1282DPBHB020 application, or S70KL1282DPBHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe behavior during read/write, partial array refresh configuration, hybrid sleep mode entry latency, and DCARS phase-shifted strobe support for timing margin optimization.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die may enter hybrid sleep or deep power down at a time. Its internal refresh controller eliminates host-managed refresh cycles, presenting static RAM semantics to the host while maintaining dynamic cell efficiency.

HYPERBUS™ operation uses 8-bit DQ bus with DDR transfers synchronized to single-ended or optional differential CK/CK#, plus bidirectional RWDS for read-data strobe and write-data mask. DCARS mode shifts RWDS phase by one clock edge to center it within the read data eye, improving setup/hold margins at 200 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-SXIT and IS66WV1288GBLL-15BLI, S70KL1282DPBHB020 uniquely balances high DDR bandwidth, ultra-low standby power, and minimal pin count - making it optimal for new designs prioritizing integration density and energy efficiency over legacy interface support.

Availability

S70KL1282DPBHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, medical patient monitors, and edge AI accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KL1282DPBHB020 belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and low-density DDR in MCU-based systems where pin count, power, and ease of integration outweigh raw density or cost-per-bit.

FAQ

What is the function of the RWDS signal in read vs write operations?

RWDS operates bidirectionally: during reads, it outputs a strobe aligned with valid DQ data to indicate timing window; during writes, it serves as a byte mask input controlling which DQ bits are written. In DCARS mode, its phase is shifted by one clock edge to center it in the read data eye, improving timing margin at 200 MHz.

Does S70KL1282DPBHB020 require external refresh management from the host MCU?

No. The device contains fully autonomous self-refresh circuitry that schedules and executes DRAM refresh cycles internally when the HYPERBUS™ interface is idle. The host sees static RAM behavior - no refresh commands, counters, or timing constraints are exposed in the interface protocol.

Can both 64 Mb dies operate simultaneously in hybrid sleep mode?

No. Due to shared control logic and power domain constraints, only one of the two stacked 64 Mb dies can enter hybrid sleep or deep power down mode at any time. The other die remains powered and accessible, allowing partial memory retention during low-power states.

What is the minimum initial access latency (IAL) for a read transaction at 200 MHz?

The datasheet specifies maximum tACC = 35 ns at 200 MHz, which corresponds to a minimum initial access latency of 7 clock cycles (35 ns ÷ 5 ns period). Actual IAL varies based on internal refresh status - the device asserts RWDS early to signal added latency when refresh is pending.