Infineon Technologies S70KL1282DPBHB023

Overview

S70KL1282DPBHB023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V or 3.0 V VCC/VCCQ, supporting 200 MHz DDR clocking, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where SRAM density is insufficient and DRAM complexity must be hidden.

For engineers reviewing the S70KL1282DPBHB023 datasheet, S70KL1282DPBHB023 pinout, S70KL1282DPBHB023 application, or S70KL1282DPBHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance, hybrid sleep mode current (330 µA @ 2.0 V), DCARS support for read-data eye alignment, and AEC-Q100 Grade 2 qualification for +105°C operation.

Technical Context

The device implements a stacked-die architecture (two 64 Mb dies) with independent refresh control per die and supports both single-ended (11-signal) and optional differential clock (12-signal) HYPERBUS™ configurations. RWDS functions bidirectionally - as output indicating refresh latency at transaction start and as read strobe or write mask during transfers.

DCARS mode shifts RWDS phase by one CK edge to center-align transitions within the read data eye, improving timing margin at 200 MHz. Burst lengths are configurable (16–128 bytes), and linear bursts across die boundaries are prohibited per datasheet constraint.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERRAM™ applications.

Compared with S27KL0641DPBHB020 and S70KL1282DPBHB020, the S70KL1282DPBHB023 uniquely combines 128 Mb density, +105°C operation, and AEC-Q100 Grade 2 certification - making it the sole option for automotive-grade high-bandwidth PSRAM in thermally demanding environments.

Availability

S70KL1282DPBHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, medical control panels, and edge AI accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with leadership in AEC-Q100-qualified components.

This part belongs to Infineon's HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and SRAM in bandwidth-constrained embedded systems while maintaining simple MCU interface requirements.

FAQ

What is the minimum initial access latency for a read transaction?

The minimum initial access latency is 4 clock cycles, as defined by the HYPERBUS™ specification and confirmed in Table 10 of the datasheet. This latency accommodates internal refresh arbitration and command decoding before first data transfer. Latency may increase if refresh is pending, signaled by RWDS assertion at transaction start.

Does S70KL1282DPBHB023 support partial array refresh?

Yes - the device supports configurable partial array refresh at fractions of the full array: 1/8, 1/4, and 1/2. This feature reduces average current consumption during light activity periods while maintaining data retention, and is controlled via Configuration Register 1 bits [11:8].

Can both 64 Mb dies enter deep power down simultaneously?

No - the datasheet explicitly states that only one die at a time can be programmed into hybrid sleep or deep power down mode. Simultaneous entry is prohibited due to internal power rail and control logic constraints in the stacked-die architecture.

Is DCARS enabled by default after power-up?

No - DCARS is disabled by default. It must be enabled via bit [15] of Configuration Register 0 (CR0), which is write-once after power-up. Once set, the phase shift applies to all subsequent read transactions until reset.