Infineon Technologies S70KL1282DPBHB030

Overview

S70KL1282DPBHB030 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in embedded systems requiring deterministic latency and simplified refresh management.

For engineers reviewing the S70KL1282DPBHB030 datasheet, S70KL1282DPBHB030 pinout, S70KL1282DPBHB030 application, or S70KL1282DPBHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance, DCARS-enabled read strobe alignment, hybrid sleep/deep power down current specs, and die-stacked 64 Mb × 2 architecture behavior under burst boundary conditions.

Technical Context

The device implements a stacked-die architecture with two independent 64 Mb DRAM dies sharing a single HYPERBUS™ interface controller; only one die may enter hybrid sleep or deep power down at a time. Its DDR interface uses center-aligned command/address and bidirectional RWDS for read strobe/write mask functionality.

DCARS mode provides a phase-shifted clock to align RWDS transitions within the read data eye, improving timing margin at 200 MHz. Internal refresh logic operates autonomously during idle cycles, eliminating host-managed refresh but requiring host-enforced burst length limits (≤128 bytes) to guarantee refresh window availability.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHB020 and S70KL1282DPBHB020, the S70KL1282DPBHB030 uniquely combines 128 Mb capacity, DCARS-enhanced timing margin, and Industrial Plus temperature qualification - making it optimal for thermally constrained, high-throughput edge computing applications.

Availability

S70KL1282DPBHB030 is available at Aetrix Electronics and suitable for automotive ADAS camera modules, industrial HMI display controllers, edge AI inference accelerators, and medical portable ultrasound systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-density, low-pin-count PSRAMs optimized for MCU- and SoC-based systems needing SRAM-like simplicity with DRAM economics and HYPERBUS™-enabled bandwidth scalability.

FAQ

What is the function of the RWDS signal in S70KL1282DPBHB030?

RWDS is a bidirectional signal used as a read data strobe (output) during read transactions and as a write data mask (input) during write transactions. In DCARS mode, its timing is phase-shifted by one clock cycle relative to CK to center the strobe edge within the read data eye, improving timing margin at 200 MHz operation.

Can both 64 Mb dies operate independently in power modes?

No - while the device contains two physically separate 64 Mb dies, only one die may be placed into hybrid sleep or deep power down mode at a time. The other die remains active or in standby, preventing full 128 Mb retention in lowest-power states.

Is DCARS mode enabled by default after power-up?

No - DCARS mode is disabled by default. It must be explicitly enabled by setting bit 7 of Configuration Register 1 (CR1) via a HYPERBUS™ register write transaction. The mode persists until changed or reset.

How does the device handle refresh during long burst transfers?

The host must limit burst length to ≤128 bytes (64 clocks) to ensure sufficient idle cycles for internal refresh. If refresh is pending, the device inserts additional initial access latency before the first data transfer, signaled via RWDS assertion at transaction start.