Infineon Technologies S70KL1282DPBHB033

Overview

S70KL1282DPBHB033 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring low-latency, burst-access memory without host-managed refresh.

For engineers reviewing the S70KL1282DPBHB033 datasheet, S70KL1282DPBHB033 pinout, S70KL1282DPBHB033 application, or S70KL1282DPBHB033 equivalent, key selection criteria include HYPERBUS™ timing compliance, DCARS-enabled read strobe alignment, hybrid sleep/deep power-down current specs (330–360 µA), and AEC-Q100 Grade 2 (–40°C to +105°C) qualification for automotive use.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power-down at a time. Its internal refresh controller eliminates host intervention, presenting static RAM semantics while maintaining dynamic cell density and cost efficiency.

HYPERBUS™ operation uses 8-bit DQ bus with DDR transfers (400 MBps peak), optional differential clock (CK/CK#), and bidirectional RWDS for read-data strobe/write-data mask-enabling precise timing control via DCARS phase-shifted strobe alignment within the read data eye.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated optical inspection and fine-pitch PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHB020 and S70KL1282DPBHB020, the S70KL1282DPBHB033 uniquely combines AEC-Q100 Grade 2 qualification, DCARS-enhanced read timing, and full 128 Mb capacity-making it the only option for thermally demanding automotive ADAS and digital cluster applications requiring guaranteed data integrity at 105°C.

Availability

S70KL1282DPBHB033 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, AI edge inference accelerators, and ADAS camera preprocessors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHB033 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line delivers high-speed, low-pin-count PSRAM for resource-constrained embedded systems-designed specifically to replace parallel NOR/PSRAM in automotive, industrial, and IoT applications where bandwidth, density, and thermal robustness are critical.

FAQ

Does S70KL1282DPBHB033 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host processors interact with it as if it were static RAM-no refresh commands, timers, or scheduling are needed. Refresh occurs transparently between transactions, provided burst lengths comply with datasheet limits (e.g., ≤128-byte wrapped bursts).

What is the purpose of the RWDS signal in read versus write operations?

In read operations, RWDS functions as a center-aligned read data strobe (enhanced by DCARS phase shift), enabling precise sampling of DQ data. In write operations, RWDS acts as a write data mask-allowing selective byte enables without additional address/control lines. Its bidirectional nature reduces pin count while preserving timing control.

Can both 64 Mb dies operate simultaneously in S70KL1282DPBHB033?

No. The stacked-die architecture shares a single HYPERBUS™ interface and control logic. Only one die is active per transaction. While the full 128 Mb address space is contiguous, linear bursts crossing the 64 Mb boundary are unsupported; software must manage die boundaries explicitly or use wrapped bursts confined within each die.

How does hybrid sleep mode differ from deep power down in terms of wake-up latency and data retention?

Hybrid sleep retains full memory contents with wake-up latency <100 ns and current draw of 660 µA @ 2.0 V. Deep power down reduces current to 330 µA but requires ~100 µs initialization before first access and preserves data only if VCC remains above 1.2 V. Hybrid sleep is preferred for frequent low-power transitions; deep power down suits extended idle periods.