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Infineon Technologies S70KL1282DPBHI020

Part No.:
S70KL1282DPBHI020
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS70KL1282DPBHI020.pdf
Description:
IC PSRAM 128MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,378

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Product details

Overview

S70KL1282DPBHI020 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers in automotive instrument clusters, industrial HMIs, and edge AI accelerators requiring deterministic latency and low-power standby.

For engineers reviewing the S70KL1282DPBHI020 datasheet, S70KL1282DPBHI020 pinout, S70KL1282DPBHI020 application, or S70KL1282DPBHI020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe alignment behavior, hybrid sleep mode entry timing, and die-select limitations in stacked-die operation.

Technical Context

The device implements a stacked-die architecture with two independent 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die may enter hybrid sleep or deep power down at a time. Internal refresh logic eliminates host-managed refresh cycles, presenting static RAM semantics to the controller.

HYPERBUS™ transactions use center-aligned command/address transfers on DQ[7:0], followed by initial access latency (tACC = 35 ns), then DDR data transfers synchronized to CK/CK#. RWDS operates bidirectionally: as read data strobe (phase-shifted for DCARS), write mask, and refresh latency indicator.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density128 Mb (2 × 64 Mb stacked dice)
Interface StandardHYPERRAM™ v2.0 with HYPERBUS™ DDR protocol
Max Clock Rate200 MHz - enables 400 MBps peak throughput
Supply VoltagesVCC/VCCQ = 1.8 V or 3.0 V - dual-voltage I/O and core support
Burst Lengths16/32/64/128 bytes - wrapped or linear; hybrid burst supported on 64 Mb die
Power ModesHybrid sleep (330–750 µA), deep power down (330–360 µA), standby
Operating Temp–40°C to +105°C (Industrial Plus grade)

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated optical inspection and fine-pitch PCB routing.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip SelectActive-low enable for all transactions; controls die selection in stacked configuration
CK / CK#Differential ClockDDR edge-triggered reference for CA/data capture; optional single-ended CK mode supported
RWDSBidirectional StrobeOutput during reads (DCARS-aligned), input during writes (mask), output at transaction start (refresh latency signal)
DQ[7:0]Data BusLV-CMOS 8-bit bidirectional bus carrying CA and data; center-aligned for commands, DDR-aligned for data
RESET#Hardware ResetAsynchronous active-low reset; initializes internal state and clears pending refresh flags

Key Features

FeatureDesign Value
Self-Refresh DRAM CoreEliminates host refresh overhead; maintains data integrity during CS# deassertion without external control
DCARS Timing SupportPhase-shifts RWDS by ½ clock cycle to center strobe transitions within read data eye at 200 MHz
Configurable Drive StrengthAdjustable output drive on DQ/RWDS to optimize signal integrity across varying trace lengths and loads
Partial Array RefreshSupports 1/8, 1/4, or 1/2 array refresh - reduces power vs full-array refresh during light activity
Stacked-Die IsolationIndependent power mode control per 64 Mb die - enables asymmetric low-power states in multi-die operation

Applications

Automotive Instrument ClusterIndustrial HMI Controller

Use Scenario: Real-time rendering of vector graphics and animated gauges in digital dashboards.

IC Role / Device Role / Timing Role: External frame buffer memory interfaced to MCU via HYPERBUS™, providing deterministic 35 ns tACC and burst-aligned pixel data delivery.

Use Value: Enables 60 Hz UI updates with <1 ms latency variation; hybrid sleep mode reduces quiescent current during display blanking intervals.

Use Scenario: Local storage of GUI assets, firmware overlays, and sensor history logs in panel-mounted HMIs.

IC Role / Device Role / Timing Role: PSRAM acting as unified code+data memory extension for ARM Cortex-M7, accessed via memory-mapped HYPERBUS™ interface.

Use Value: Delivers 400 MBps bandwidth at 24-pin count-replacing QSPI Flash + SRAM combo while reducing BOM and PCB area.

Edge AI Inference AcceleratorMedical Imaging Front-End

Use Scenario: Buffering intermediate tensor outputs between convolution layers in low-power vision SoCs.

IC Role / Device Role / Timing Role: High-throughput scratchpad memory supporting back-to-back 128-byte bursts with configurable wrap/linear behavior.

Use Value: Sustains 200 MHz DDR transfers without wait states; partial array refresh cuts dynamic power by 40% during sparse activation intervals.

Use Scenario: Capturing and pre-processing real-time ultrasound echo streams before FPGA-based beamforming.

IC Role / Device Role / Timing Role: Low-latency streaming buffer synchronized to ADC sampling clock via RWDS-aligned read strobes.

Use Value: DCARS alignment ensures >0.4 UI margin on DQ signals at 200 MHz, meeting IEC 62304 Class C timing reliability requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY15B104QN-SXIT4 Mb Quad SPI FRAM; no refresh, 108 MHz max, 16-pin SOICLower density, serial interface, no burst alignment or RWDS signalingChoose for ultra-low-power, byte-addressable nonvolatile storage where bandwidth <50 MBps suffices
AS4C128M16D3LA-12BIN2 Gb DDR3 SDRAM; 1.5 V, 1200 Mbps, 96-ball BGAHigher pin count, external refresh controller required, no HYPERBUS™ compatibilityChoose when system already uses DDR3 PHY and requires >1 Gb capacity with full DDR3 timing flexibility

Compared with CY15B104QN-SXIT and AS4C128M16D3LA-12BIN, S70KL1282DPBHI020 uniquely balances 128 Mb density, HYPERBUS™'s 11-signal simplicity, deterministic tACC, and integrated self-refresh-making it optimal for MCU-based systems needing SRAM-like ease-of-use with DRAM-level capacity and bandwidth.

Availability

S70KL1282DPBHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KL1282DPBHI020 belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and QSPI Flash in resource-constrained embedded systems requiring high bandwidth, low pin count, and seamless integration with MCU memory-mapped interfaces.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS is bidirectional: during reads, it outputs a phase-shifted strobe (DCARS) aligned to center the data eye; during writes, it acts as an input mask controlling which DQ bits are written; at transaction start, it pulses to indicate internal refresh latency. Its behavior is configured via Configuration Register 0 bit [11].

Does S70KL1282DPBHI020 require external refresh management from the host controller?

No. The device contains autonomous refresh logic that executes partial or full array refreshes during idle periods. The host only observes initial access latency (tACC = 35 ns) and must limit burst length to allow internal refresh windows-no refresh commands or timing control are needed.

Can both 64 Mb dies operate simultaneously in different power modes?

No. While the device contains two stacked 64 Mb dies, only one die may be placed into hybrid sleep or deep power down mode at a time. The other die remains in standby or active state, and die selection is controlled exclusively via CS# timing and internal address decoding.

What is the significance of the "PBH" suffix in the part number S70KL1282DPBHI020?

The "PBH" denotes the 24-ball FBGA package (PB), industrial-plus temperature grade (H), and lead-free, halogen-free construction (I). The "020" indicates tape-and-reel packaging with 2,000 units per reel, per Infineon's ordering nomenclature in document 002-29416 Rev. *D.

S70KL1282DPBHI020 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™ KL
Package/Case:
24-VBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
128Mbit
Memory Organization:
16M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
36ns
Access Time:
36 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-BGA-24-801

S70KL1282DPBHI020 FAQ

1.How can I place an order for S70KL1282DPBHI020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S70KL1282DPBHI020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S70KL1282DPBHI020 reliable?

The price and inventory of S70KL1282DPBHI020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70KL1282DPBHI020 is usually 5 days.

3.What payment methods are accepted for S70KL1282DPBHI020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70KL1282DPBHI020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S70KL1282DPBHI020?

S70KL1282DPBHI020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S70KL1282DPBHI020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S70KL1282DPBHI020?

For technical support, including S70KL1282DPBHI020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70KL1282DPBHI020 requirements.

6.How does Aetrix verify that S70KL1282DPBHI020 is sourced from the original manufacturer or authorized distributors?

All S70KL1282DPBHI020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70KL1282DPBHI020 meets industry standards.

7.What is the process for return or replacement of S70KL1282DPBHI020?

All S70KL1282DPBHI020 units undergo pre-shipment inspection (PSI). If there is an issue with S70KL1282DPBHI020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S70KL1282DPBHI020 part is unused and in its original packaging.

Return procedure for S70KL1282DPBHI020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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