Infineon Technologies S70KL1282DPBHI023

Overview

S70KL1282DPBHI023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where SRAM density is insufficient and DDR complexity is prohibitive.

For engineers reviewing the S70KL1282DPBHI023 datasheet, S70KL1282DPBHI023 pinout, S70KL1282DPBHI023 application, or S70KL1282DPBHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe alignment behavior, hybrid sleep mode entry latency, DCARS phase-shift configuration, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification for under-hood automotive use.

Technical Context

The device implements a stacked-die architecture-two 64 Mb DRAM dies sharing a single HYPERBUS™ interface-with internal refresh logic that eliminates host-managed refresh cycles. It supports both single-ended (11-signal) and optional differential clock (12-signal) configurations, with RWDS functioning as bidirectional strobe: output during reads (center-aligned or DCARS-offset), input during writes (as write mask).

Command/address and data share the 8-bit DQ[7:0] bus using time-multiplexed 6-byte CA transfers followed by burst data. Burst lengths are configurable (16/32/64/128 bytes), with hybrid burst mode enabling wrapped-then-linear access within a 64 Mb die-but not across die boundaries-enabling deterministic latency for real-time display frame buffering.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball-out optimized for signal integrity on high-speed HYPERBUS™ layouts. Package meets JEDEC MO-270AB standard and supports reflow per IPC/JEDEC J-STD-020D.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL0641DPBHI020 and S70KL1282DPBHI020, the S70KL1282DPBHI023 uniquely combines full 128 Mb density, DCARS timing margin enhancement, and AEC-Q100 Grade 2 qualification-making it the only option for safety-critical, high-temperature automotive displays requiring sustained 400 MBps throughput.

Availability

S70KL1282DPBHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and medical imaging consoles requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's HYPERRAM™ product line-designed specifically to replace parallel SRAM and low-density DDR in resource-constrained embedded systems requiring high bandwidth, low pin count, and simplified memory subsystem design.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS operates bidirectionally: during reads, it outputs a strobe aligned to read data (center-aligned or DCARS-offset) to indicate valid data windows; during writes, it functions as an input byte mask, allowing selective updating of DQ[7:0] lanes without full-bus writes. Its dual role eliminates need for separate RD/WR strobes, reducing signal count.

Does S70KL1282DPBHI023 require external refresh management from the host controller?

No. The device contains fully autonomous self-refresh logic that executes internal DRAM refresh cycles during idle periods or transaction gaps. Host sees only SRAM-like behavior-no refresh commands, timers, or hidden latency penalties-provided burst lengths comply with maximum duration limits specified in the datasheet to reserve refresh windows.

Can both 64 Mb dies enter deep power down simultaneously?

No. Due to stacked-die architecture, only one die (Die 0 or Die 1) can be placed in deep power down or hybrid sleep mode at a time. The other remains powered to maintain interface readiness. This constraint is documented in Note 1 of the datasheet and affects total standby current minimization strategies in system-level power budgeting.

How does DCARS improve timing margin compared to standard RWDS?

DCARS shifts the RWDS transition edge by half a clock cycle relative to CK, positioning it near the center of the read data eye instead of at its edge. This increases setup/hold margin by ~1.25 ns at 200 MHz, enabling reliable operation on longer traces or higher-loss PCBs where standard RWDS alignment would risk sampling errors-critical for automotive display interfaces.