Infineon Technologies S70KL1282DPBHV020

Overview

S70KL1282DPBHV020 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring low-latency, burst-access memory without host-managed refresh.

For engineers reviewing the S70KL1282DPBHV020 datasheet, S70KL1282DPBHV020 pinout, S70KL1282DPBHV020 application, or S70KL1282DPBHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), hybrid sleep/deep power down current (≤330 µA at 2.0 V), RWDS bidirectional strobe behavior, DCARS phase-shifted read strobe support, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

This PSRAM implements a stacked-die architecture-two 64 Mb DRAM dies sharing one HYPERBUS™ interface-with on-die refresh control logic that eliminates host refresh management. It uses LV-CMOS signaling across all I/Os and supports both single-ended (11-signal) and optional differential clock (12-signal) configurations.

Read/write transactions begin with CS# assertion and six-byte command/address transfer over DQ[7:0], followed by configurable initial latency and DDR-aligned data transfers. RWDS operates bidirectionally: output during reads (as data strobe or refresh indicator), input during writes (as mask), and supports DCARS mode where its edge is phase-shifted relative to CK to center within the read data eye.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL0641DPBHV020 and S70KL2562DPBHV020, the S70KL1282DPBHV020 delivers optimal balance of capacity, power efficiency, and pin compatibility-making it ideal for mid-tier automotive and industrial systems needing verified 128 Mb bandwidth without redesign.

Availability

S70KL1282DPBHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle assurance.

Supply support for S70KL1282DPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-speed, low-pin-count PSRAMs optimized for MCU- and SoC-based systems needing SRAM-like simplicity with DRAM-like density-targeting automotive displays, industrial controllers, and edge AI platforms.

FAQ

What is the difference between S70KL1282DPBHV020 and standard DDR SDRAM?

The S70KL1282DPBHV020 integrates self-refresh logic and uses the simplified HYPERBUS™ interface (11–12 signals), eliminating the need for external refresh controllers and complex DDR PHY calibration. Unlike standard DDR SDRAM, it presents an SRAM-like interface to the host-no command training, no DLL tuning, and no manual refresh scheduling-while achieving comparable bandwidth via DDR on an 8-bit bus.

Does S70KL1282DPBHV020 support both 1.8 V and 3.0 V I/O simultaneously?

No. The device supports either 1.8 V or 3.0 V for both VCC (core) and VCCQ (I/O), selected at power-up via internal voltage detection-determined by the ordering part number. Mixed-voltage operation (e.g., 1.8 V core + 3.0 V I/O) is not supported; both supplies must match the specified nominal voltage.

How does RWDS function during write transactions?

During write operations, RWDS acts as an input used as a byte mask for DQ[7:0]. Each rising edge of RWDS gates one byte of incoming data, allowing selective byte-write capability without requiring full-bus writes. This enables efficient partial updates to memory locations, reducing unnecessary data traffic and power consumption.

Can both 64 Mb dies operate independently in hybrid sleep mode?

No. Only one die can enter hybrid sleep or deep power down mode at a time. The second die remains active and retains data. This asymmetry allows partial memory retention while minimizing power-critical for applications like automotive clusters that must preserve gauge state during infotainment subsystem sleep.