Infineon Technologies S70KL1282DPBHV023

Overview

S70KL1282DPBHV023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA (5 × 5 mm) package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs requiring deterministic latency and embedded DRAM density without host-managed refresh.

For engineers reviewing the S70KL1282DPBHV023 datasheet, S70KL1282DPBHV023 pinout, S70KL1282DPBHV023 application, or S70KL1282DPBHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), RWDS-driven read strobe alignment, hybrid sleep mode current (330 µA @ 2.0 V), DCARS phase-shifted strobe support, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

This PSRAM implements a stacked-die architecture-two 64 Mb DRAM dies sharing a single HYPERBUS™ interface-with independent power-down control per die. Its self-refresh logic autonomously manages array refresh during idle cycles, eliminating host refresh overhead while enforcing burst-length limits (≤128 bytes) to guarantee internal refresh windows.

The interface uses LV-CMOS signaling with optional differential clock (CK/CK#) and bidirectional RWDS that functions as read data strobe, write data mask, and refresh latency indicator. DCARS mode shifts RWDS phase by one CK edge to center-align transitions within the read data eye at 200 MHz DDR operation.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-SXIT and IS66WV12816EBLL-15BLI, S70KL1282DPBHV023 uniquely delivers automotive-grade DDR bandwidth, self-refresh autonomy, and ultra-low-power sleep modes in a 24-ball footprint-making it the sole fit for next-gen display and sensor-edge applications demanding density, speed, and thermal resilience.

Availability

S70KL1282DPBHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS sensor fusion units, and medical imaging edge processors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282DPBHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KL1282DPBHV023 belongs to Infineon's HYPERRAM™ product line-designed specifically to replace parallel NOR/NAND and low-density SDRAM in space-constrained, high-throughput embedded systems where pin count, power, and thermal robustness are critical.

FAQ

Does S70KL1282DPBHV023 require external refresh circuitry?

No. The device integrates autonomous self-refresh logic that manages DRAM array refresh during idle cycles. Host systems interact with it as a pseudo-static RAM-no refresh commands, timers, or scheduling are needed. Refresh occurs transparently when CS# is deasserted and no transaction is active, provided burst lengths comply with datasheet limits (≤128 bytes).

What is the function of the RWDS pin during write operations?

During write transactions, RWDS serves as a write data mask: each rising edge samples one byte of DQ[7:0] data, and its timing determines valid write capture windows. Unlike read mode, RWDS does not output strobes during writes-it is driven by the host to align masked writes with internal array timing, ensuring reliable data latching without additional control signals.

Can both 64 Mb dies operate simultaneously in S70KL1282DPBHV023?

No. The two 64 Mb dies share a single HYPERBUS™ interface and cannot be accessed concurrently. They are logically concatenated into one 128 Mb address space. However, power modes (hybrid sleep, deep power down) can be applied independently per die-allowing one die to remain active while the other enters low-power state to reduce total current draw.

Is DCARS functionality enabled by default on S70KL1282DPBHV023?

Yes. DCARS (DDR Center-Aligned Read Strobe) is hardware-enabled and active by default. It automatically shifts RWDS phase by one CK edge during read transactions to center the strobe transition within the data eye. No register configuration is required-this behavior is fixed in silicon and verified across all temperature and voltage corners per AEC-Q100 testing.