Infineon Technologies S70KL1282GABHB023

Overview

S70KL1282GABHB023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting 200 MHz DDR clocking, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters requiring deterministic latency and partial array refresh.

For engineers reviewing the S70KL1282GABHB023 datasheet, S70KL1282GABHB023 pinout, S70KL1282GABHB023 application, or S70KL1282GABHB023 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS strobe behavior during read/write, hybrid sleep mode entry per die, DCARS phase-shifted strobe support, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die can enter hybrid sleep or deep power down at a time. Its internal refresh controller eliminates host-managed refresh cycles, presenting static RAM semantics to the host while maintaining dynamic cell efficiency.

HYPERBUS™ transactions use 8-bit DQ lines with DDR transfers synchronized to single-ended or optional differential CK/CK#, with RWDS serving dual roles: as a read data strobe (center-aligned) and write data mask. DCARS mode shifts RWDS phase by one clock edge to center it within the read data eye for improved timing margin at 200 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-PSOC and IS66WV12816EBLL-100BLI, S70KL1282GABHB023 uniquely balances automotive-grade reliability, HYPERBUS™ pin efficiency, and PSRAM density-enabling 128 Mb frame buffers in space-constrained modules where FRAM lacks bandwidth and parallel SRAM increases layout cost and power.

Availability

S70KL1282GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS display subsystems, infotainment head units, and telematics control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and low-density DDR in automotive and industrial embedded systems where pin count, power, and AEC-Q100 compliance are critical constraints.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS operates bidirectionally: during reads, it outputs as a strobe aligned to data edges (center-aligned or DCARS phase-shifted); during writes, it inputs as a byte-enable mask controlling which DQ[7:0] bits are written. Its dual role eliminates need for separate RD/WR control signals, reducing interface complexity.

Can both 64 Mb dies enter deep power down simultaneously?

No. The datasheet explicitly states only one die at a time can be programmed into hybrid sleep or deep power down mode. This restriction arises from shared control logic and power rail architecture; simultaneous entry would violate internal voltage sequencing and refresh arbitration rules.

How does DCARS improve timing margin compared to standard RWDS?

DCARS shifts RWDS phase by one CK edge during reads, moving its transition from data edge alignment to data eye center. At 200 MHz, this adds ~1.25 ns of setup/hold margin, directly addressing timing closure challenges in high-speed automotive PCB layouts with signal skew and jitter.

Is hardware reset (RESET#) required before initial HYPERBUS™ initialization?

Yes. RESET# must be asserted for ≥1 µs before first CS# assertion to initialize internal state machines, clear configuration registers, and synchronize refresh counters. Skipping this step may result in undefined CA decoding, failed burst termination, or inconsistent tACC behavior.