Infineon Technologies S70KL1282GABHB033

Overview

S70KL1282GABHB033 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting 200 MHz DDR clocking and delivering up to 400 MBps data throughput. It integrates dual 64 Mb stacked dice, uses single-ended or optional differential clock (CK/CK#), and features RWDS bidirectional strobe for read/write timing control in embedded memory expansion applications.

For engineers reviewing the S70KL1282GABHB033 datasheet, S70KL1282GABHB033 pinout, S70KL1282GABHB033 application, or S70KL1282GABHB033 equivalent, key selection criteria include HYPERBUS™ timing compliance, configurable burst length (16–128 bytes), hybrid sleep/deep power down modes, and FBGA-24 package compatibility with industrial (–40°C to +85°C) and automotive AEC-Q100 grade 3 operation.

Technical Context

The S70KL1282GABHB033 implements a DDR HYPERBUS™ interface with 11–12 signal count (CS#, CK/CK#, RWDS, DQ[7:0], RESET#), where RWDS serves as both read data strobe and write data mask. Its internal refresh logic eliminates host-managed refresh, enabling PSRAM-like simplicity while retaining DRAM density advantages.

It supports linear and wrapped burst configurations (8–64 clocks), DCARS phase-shifted read strobe for improved timing margin, and partial/full array refresh. The device uses 38-nm DRAM technology and requires initial access latency management by the host to accommodate internal refresh cycles between transactions.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM memory expansion applications.

Compared with S27KL0641DPBHB020, S70KL1282GABHB033 doubles density and adds DCARS for tighter timing closure; versus S70KL0642GABHB020, it trades cross-die burst flexibility for higher capacity in the same footprint - critical for memory-constrained edge AI and automotive displays.

Availability

S70KL1282GABHB033 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial HMI displays, and edge AI accelerator modules requiring stable component supply with AEC-Q100 qualification and long-term lifecycle assurance.

Supply support for S70KL1282GABHB033 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-bandwidth, low-pin-count PSRAM for memory expansion in resource-constrained embedded systems where parallel NOR/SDRAM interfaces are impractical.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS operates bidirectionally: during reads, it outputs as a strobe aligned to data (optionally phase-shifted via DCARS); during writes, it functions as an input mask controlling which DQ bits are written. This dual role eliminates need for separate RD/WR strobes, reducing pin count while maintaining precise timing control for both directions.

Does S70KL1282GABHB033 require external refresh circuitry?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host systems interact with it as if it were static RAM - no refresh commands, timers, or scheduling are required, simplifying firmware and reducing CPU load in MCU-based designs.

How does the stacked-die architecture affect power mode usage?

Only one of the two 64 Mb dice can enter hybrid sleep or deep power down at a time. This constraint requires software coordination when managing low-power states across large memory regions, but enables selective die retention - e.g., keeping one die active for real-time buffers while powering down the other for background data storage.

Can S70KL1282GABHB033 operate with both 1.8 V and 3.0 V supplies simultaneously?

No. VCC and VCCQ must be supplied at the same nominal voltage - either 1.8 V or 3.0 V - as defined by the ordering part number. Mixed-voltage operation is not supported; the device does not include internal level-shifting between core and I/O domains.