Infineon Technologies S70KL1282GABHI020

Overview

S70KL1282GABHI020 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring deterministic latency and low-power standby.

For engineers reviewing the S70KL1282GABHI020 datasheet, S70KL1282GABHI020 pinout, S70KL1282GABHI020 application, or S70KL1282GABHI020 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), hybrid sleep/deep power down current (≤330 µA at 2.0 V), RWDS bidirectional strobe behavior, DCARS phase-shifted read strobe support, and AEC-Q100 Grade 2 qualification for +105°C operation.

Technical Context

This PSRAM implements a stacked-die architecture-two 64 Mb DRAM dies sharing one HYPERBUS™ interface-with independent refresh control per die. It uses LV-CMOS signaling on all I/Os and supports both single-ended (11-signal) and optional differential clock (12-signal) configurations.

The device relies on internal self-refresh logic to maintain data without host intervention, but requires host-enforced transaction length limits (max 128-byte burst) to guarantee refresh window availability. RWDS functions as read data strobe, write data mask, and refresh latency indicator-all within the same signal.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL0641DPBHI020 and S70KL1282GABHI021, the S70KL1282GABHI020 uniquely delivers full 128 Mb capacity, DCARS-enhanced read timing margin, and AEC-Q100 Grade 2 qualification-making it the only option for thermally demanding automotive edge compute nodes requiring sustained 200 MHz operation.

Availability

S70KL1282GABHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, AI edge inference accelerators, and connected medical devices requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70KL1282GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with leadership in automotive-grade DRAM and embedded security.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained MCUs and SoCs-designed specifically to replace parallel NOR/NAND and legacy SRAM in automotive, industrial, and IoT edge applications.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS operates bidirectionally: during reads, it outputs as a strobe synchronized to data (center-aligned or DCARS-phase-shifted); during writes, it inputs as a byte-mask signal controlling which DQ[7:0] bits are written. Its dual role eliminates need for separate RD/WR control lines, reducing interface count while maintaining timing precision.

Does S70KL1282GABHI020 require external refresh management?

No. The device contains fully autonomous self-refresh circuitry that maintains data integrity without host intervention. The host only needs to observe maximum burst length limits (e.g., ≤128 bytes) to ensure internal refresh windows remain available between transactions.

How does DCARS improve timing margin compared to standard RWDS?

DCARS shifts the RWDS output edge by ½ clock cycle relative to CK, positioning it at the center of the read data eye instead of its edge. This increases setup/hold slack by up to 2.5 ns at 200 MHz, enabling robust operation across voltage and temperature variation without requiring tighter board-level skew control.

Can both 64 Mb dies enter deep power down simultaneously?

No. Due to stacked-die architecture, only one die can be placed into hybrid sleep or deep power down mode at a time. The second die remains active and accessible, allowing partial memory retention during low-power states-a design trade-off to maintain interface simplicity and avoid inter-die control signaling.