Infineon Technologies S70KL1282GABHI023

Overview

S70KL1282GABHI023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where SRAM-like simplicity and DRAM density are required.

For engineers reviewing the S70KL1282GABHI023 datasheet, S70KL1282GABHI023 pinout, S70KL1282GABHI023 application, or S70KL1282GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, DCARS-enabled read strobe alignment, hybrid sleep mode current (330 µA at 2.0 V), burst length configurability (16–128 bytes), and AEC-Q100 Grade 2 qualification for +105°C operation.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. Its internal refresh controller eliminates host-managed refresh cycles, presenting static RAM semantics to the host while maintaining dynamic cell efficiency.

HYPERBUS™ operates with 11–12 signals including optional differential clock (CK/CK#), bidirectional RWDS for read strobe/write mask, and CS#-driven command/address transfers over DQ[7:0]. DCARS mode shifts RWDS phase by one clock edge to center-align transitions within the read data eye at 200 MHz DDR.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated reflow assembly and thermal performance suitable for automotive-grade PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-PSOC and IS66WV12816EBLL-15BLI, S70KL1282GABHI023 uniquely balances DDR bandwidth, PSRAM density, and automotive-grade low-power states - making it optimal for modern embedded displays and edge AI where pin count, power, and throughput must co-optimize.

Availability

S70KL1282GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical patient monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and automotive qualification expertise.

S70KL1282GABHI023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel SRAM and low-density DDR in MCU- and SoC-based embedded systems where pin efficiency, low power, and ease of integration are critical.

FAQ

What is the function of the RWDS signal in S70KL1282GABHI023?

RWDS is a bidirectional signal used as a read data strobe (output) and write data mask (input). During reads, it indicates data validity and aligns with DQ transitions; in DCARS mode, its phase is shifted by one clock edge to center within the read data eye. During writes, it masks individual bytes on DQ[7:0], enabling partial-word updates without read-modify-write cycles.

Does S70KL1282GABHI023 require external refresh control from the host MCU?

No. The device contains an integrated self-refresh controller that automatically manages DRAM refresh during idle periods. The host sees static RAM behavior - no refresh commands or timing constraints are imposed. However, the host must respect initial access latency indications from RWDS and limit burst duration to allow internal refresh cycles between transactions.

Can both 64 Mb dies operate simultaneously in S70KL1282GABHI023?

No. The two 64 Mb dies are stacked and share a single HYPERBUS™ interface. They operate sequentially - only one die is active per transaction. Hybrid sleep and deep power down modes also apply to one die at a time; concurrent low-power entry across both dies is not supported per the datasheet.

What is the significance of the "GABHI023" suffix in the part number?

The suffix denotes specific configuration: G = Green (RoHS), A = Automotive grade (AEC-Q100 Grade 2), B = 24-ball FBGA package, H = 1.8 V/3.0 V dual supply, I023 = Industrial temperature range (–40°C to +105°C) with tape-and-reel packaging. This distinguishes it from variants with different voltage, temp, or packaging options.