Infineon Technologies S70KL1282GABHM020

Overview

S70KL1282GABHM020 from Infineon is a 128-Mbit Automotive Grade 1 (–40 °C to +125 °C) HyperRAM self-refresh DRAM with HyperBus DDR interface, 200 MHz max clock rate, 8-bit DQ bus, and 24-ball FBGA package. It delivers up to 400 MBps throughput, supports configurable burst lengths (16–128 bytes), and operates at 1.8 V or 3.0 V for VCC/VCCQ - used as high-bandwidth, low-pin-count external memory in automotive ADAS domain controllers.

For engineers reviewing the S70KL1282GABHM020 datasheet, S70KL1282GABHM020 pinout, S70KL1282GABHM020 application, or S70KL1282GABHM020 equivalent, key selection considerations include HyperBus timing compliance, dual-die refresh management, RWDS bidirectional strobe behavior, DCARS phase-shifted read strobe support, and AEC-Q100 Grade 1 thermal/power validation.

Technical Context

This device implements a stacked-die architecture with two 64-Mb DRAM dies sharing one HyperBus interface; only one die can enter Hybrid Sleep or Deep Power Down mode at a time. Its self-refresh logic eliminates host-managed refresh cycles, presenting pseudo-static behavior while maintaining true DRAM density and power efficiency.

The HyperBus interface uses center-aligned command/address transfers on DQ[7:0], edge-aligned RWDS for read data strobing, and center-aligned data during writes. DCARS mode introduces a phase-shifted clock to reposition RWDS transitions within the read data eye - critical for timing margin in high-speed automotive SoC interfaces.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 5 mm × 5 mm footprint and 0.8 mm ball pitch. RoHS-compliant, lead-free, and qualified for automotive reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with CY14B108L-BA25XI and IS66WV12816EBLL-15BLI, S70KL1282GABHM020 uniquely combines automotive-grade reliability, DDR bandwidth, and self-refresh simplicity - making it optimal for new ADAS and gateway designs where pin count, power, and thermal robustness are constrained.

Availability

S70KL1282GABHM020 is available at Aetrix Electronics and suitable for automotive ADAS camera modules, infotainment head units, and radar signal processors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's HyperRAM product line - engineered specifically for automotive and industrial systems needing high-density, low-pin-count, self-refreshing memory with guaranteed AEC-Q100 compliance and DDR-level throughput.

FAQ

What is the function of the RWDS signal in S70KL1282GABHM020?

RWDS is a bidirectional strobe: during reads, it acts as an edge-aligned read data strobe and initial latency indicator; during writes, it serves as a byte-level write mask (HIGH = masked, LOW = written). Its behavior changes dynamically per transaction phase and is essential for timing alignment in both linear and wrapped bursts.

Does S70KL1282GABHM020 require external refresh commands from the host controller?

No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host sees pseudo-static behavior - no refresh commands, counters, or scheduling are needed, simplifying firmware and reducing CPU overhead in safety-critical automotive systems.

Can both 64-Mb dies operate simultaneously in S70KL1282GABHM020?

No. While the device presents a unified 128-Mb address space, only one die can be active at a time for read/write operations or power modes. Concurrent access or independent Deep Power Down entry is not supported - transactions are internally serialized across the two dies.

Is DCARS functionality enabled by default in S70KL1282GABHM020?

DCARS is optional and must be configured via HyperBus register write to the Device Configuration Register (DCR). When enabled, it applies a fixed phase shift to generate the DCARS clock; disabling it reverts RWDS to standard edge-aligned operation. Configuration persists across power cycles if stored in non-volatile register bits.