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Infineon Technologies S70KL1282GABHM023
- Part No.:
- S70KL1282GABHM023
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S70KL1282GABHM023.pdf
- Description:
- IC PSRAM 128MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,457
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Product details
Overview
S70KL1282GABHM023 from Infineon is a 128-Mbit Automotive Grade 1 (–40 °C to +125 °C) HyperRAM self-refresh DRAM with HyperBus DDR interface, 200 MHz clock support, 8-bit DQ bus, and 24-ball FBGA package. It delivers up to 400 MBps throughput, supports linear/wrapped burst lengths (16–128 bytes), and integrates on-die refresh control for pseudo-static operation in automotive infotainment and ADAS domain controllers.
For engineers reviewing the S70KL1282GABHM023 datasheet, S70KL1282GABHM023 pinout, S70KL1282GABHM023 application, or S70KL1282GABHM023 equivalent, key selection criteria include AEC-Q100 Grade 1 qualification, dual-die 128-Mbit architecture with independent die-level power modes, RWDS bidirectional strobe behavior, DCARS support, and HyperBus timing compliance at 200 MHz under 1.8 V/3.0 V VCC/VCCQ.
Technical Context
This device implements a stacked-die architecture comprising two 64-Mbit DRAM dies sharing a single HyperBus interface. Each die operates independently for Hybrid Sleep and Deep Power Down entry, enabling selective power gating without affecting the other die's state.
The HyperBus interface uses center-aligned command/address transfers and edge-aligned read data with RWDS, supporting both single-ended (CK) and optional differential (CK/CK#) clocking. DCARS mode shifts RWDS phase relative to CK to improve read data eye margin during high-speed bursts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mbit (two 64-Mbit stacked dies) |
| Interface Standard | HyperBus DDR - 8-bit DQ, bidirectional RWDS, CS#, CK/CK#, RESET# |
| Max Clock Rate | 200 MHz at both 1.8 V and 3.0 V VCC/VCCQ supply levels |
| Data Throughput | 400 MBps (3,200 Mbps) - achieved via DDR transfers on DQ[7:0] |
| Burst Length Options | 16/32/64/128-byte wrapped or linear bursts; hybrid burst supported on 64 Mb die |
| Operating Temperature | –40 °C to +125 °C (AEC-Q100 Grade 1 qualified) |
| Power Modes | Hybrid Sleep Mode and Deep Power Down - per-die controllable |
Pinout & Package
Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input (optional) | Enables precise timing capture for DDR command/address/data; CK# required only when differential mode enabled |
| CS# | Chip select input | Active-low enable for all HyperBus transactions; deassertion terminates ongoing burst |
| RWDS | Bidirectional read/write data strobe | Indicates initial latency, serves as read data strobe (edge-aligned), and acts as write mask (HIGH = masked byte) |
| DQ[7:0] | 8-bit bidirectional data bus | Transfers command/address (6 bytes), read data (edge-aligned with RWDS), and write data (center-aligned with CK) |
| RESET# | Hardware reset input | Asynchronous active-low signal that forces device into known initialization state, clearing internal registers and aborting pending operations |
Key Features
| Feature | Design Value |
|---|---|
| Self-Refresh DRAM Architecture | On-die refresh controller eliminates host refresh management; appears as PSRAM to system software |
| Configurable Output Drive Strength | Adjustable I/O drive for signal integrity optimization across varying PCB trace lengths and loads |
| DCARS Support | Phase-shifted RWDS generation improves setup/hold margin for read data at 200 MHz in noisy automotive environments |
| Per-Die Power Control | Independent Hybrid Sleep and Deep Power Down entry per 64-Mbit die enables fine-grained power management in multi-context systems |
| AEC-Q100 Grade 1 Qualification | Validated for continuous operation from –40 °C to +125 °C ambient, meeting automotive reliability and lifetime requirements |
Applications
| Automotive Digital Cluster | ADAS Domain Controller Buffer |
|---|---|
|
Use Scenario: Real-time rendering of high-resolution instrument graphics with dynamic overlays and video playback. IC Role / Device Role / Timing Role: High-bandwidth frame buffer memory interfaced directly to GPU or display controller via HyperBus. Use Value: 400 MBps throughput sustains 1080p@60fps rendering while AEC-Q100 Grade 1 ensures operation across vehicle thermal cycles. |
Use Scenario: Temporary storage of sensor fusion data (radar, camera, ultrasonic) before AI inference processing. IC Role / Device Role / Timing Role: Low-latency, burst-capable scratchpad memory co-located with SoC for time-critical preprocessing buffers. Use Value: Linear burst access and configurable latency reduce CPU wait states; per-die power modes cut idle power by >60% during sensor sleep intervals. |
| Infotainment Head Unit | Vehicle Telematics Gateway |
|
Use Scenario: Concurrent execution of navigation, voice assistant, media streaming, and OTA update staging. IC Role / Device Role / Timing Role: Shared system memory resource accessed by multiple ARM cores and DSPs over HyperBus interconnect. Use Value: Wrapped burst support enables efficient cache line fills; RWDS masking allows atomic partial-word writes during concurrent firmware updates. |
Use Scenario: Aggregation and protocol translation of CAN FD, Ethernet AVB, and LIN messages before cloud upload. IC Role / Device Role / Timing Role: Packet buffering memory with deterministic access latency for real-time message queuing and timestamping. Use Value: 200 MHz clock rate and DCARS ensure reliable 100+ Mbps packet buffering under EMI-heavy under-hood conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S70KL1282GABHI023 | Same die, identical electrical specs, but packaged in 24-ball FBGA with industrial temperature range (–40 °C to +85 °C) | Lacks AEC-Q100 Grade 1 qualification and extended high-temp operation | Select when automotive qualification is not required and cost sensitivity outweighs thermal margin needs |
| S70KS1282GABHM023 | Same 128-Mbit HyperRAM, but with single-ended clock only (no CK# pin); otherwise identical pinout and timing | Reduces PCB routing complexity but forfeits differential clock noise immunity at board-level EMI extremes | Select for cost-optimized designs where board layout controls EMI sufficiently and CK# routing is impractical |
Compared with S70KL1282GABHM023, the S70KL1282GABHI023 sacrifices automotive qualification for lower cost, while the S70KS1282GABHM023 trades differential clock robustness for simplified layout - neither offers full Grade 1 thermal resilience and noise immunity simultaneously.
Availability
S70KL1282GABHM023 is available at Aetrix Electronics and suitable for automotive digital cluster, ADAS domain controller, and infotainment head unit designs requiring stable component supply, AEC-Q100 compliance, and long-term lifecycle assurance.
Supply support for S70KL1282GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's HyperRAM product line, designed specifically for automotive and industrial systems needing high-bandwidth, low-pin-count, self-refresh memory with guaranteed operation across extreme temperature ranges.
FAQ
Does S70KL1282GABHM023 require external refresh control from the host processor?
No. The device contains integrated self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host interacts with it as a pseudo-static RAM - no refresh commands, timers, or scheduling are needed. Refresh occurs transparently between transactions, provided burst lengths comply with maximum duration limits specified in the datasheet to guarantee internal refresh windows.
What is the functional difference between RWDS and DCARS modes?
RWDS is the standard bidirectional strobe used for initial latency indication, read data strobing, and write masking. DCARS is an optional enhancement where RWDS is phase-shifted relative to CK to center its transition within the read data eye - improving timing margin at 200 MHz. DCARS requires enabling via configuration register and is only active during read transactions.
Can both 64-Mbit dies operate simultaneously in different power modes?
Yes. The dual-die architecture allows one die to enter Hybrid Sleep Mode or Deep Power Down while the other remains active and accessible. This enables asymmetric power management - for example, keeping one die awake for real-time logging while powering down the second die used for background analytics - without interrupting host access to the live die.
Is the 24-ball FBGA footprint compatible with other HyperRAM devices in the S70K/S70S family?
Yes. All S70KL/S70KS 128-Mbit HyperRAM variants share the identical 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) mechanical footprint and pin assignment. This enables direct PCB footprint reuse across temperature grades (Grade 1 vs. industrial) and clock interface options (single-ended vs. differential), simplifying design migration and inventory consolidation.
S70KL1282GABHM023 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S70KL1282GABHM023 FAQ
1.How can I place an order for S70KL1282GABHM023 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70KL1282GABHM023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70KL1282GABHM023 reliable?
The price and inventory of S70KL1282GABHM023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70KL1282GABHM023 is usually 5 days.
3.What payment methods are accepted for S70KL1282GABHM023?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70KL1282GABHM023 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70KL1282GABHM023?
S70KL1282GABHM023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70KL1282GABHM023 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70KL1282GABHM023?
For technical support, including S70KL1282GABHM023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70KL1282GABHM023 requirements.
6.How does Aetrix verify that S70KL1282GABHM023 is sourced from the original manufacturer or authorized distributors?
All S70KL1282GABHM023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70KL1282GABHM023 meets industry standards.
7.What is the process for return or replacement of S70KL1282GABHM023?
All S70KL1282GABHM023 units undergo pre-shipment inspection (PSI). If there is an issue with S70KL1282GABHM023, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70KL1282GABHM023 part is unused and in its original packaging.
Return procedure for S70KL1282GABHM023:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70KL1282GABHM023 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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