Infineon Technologies S70KL1282GABHV020

Overview

S70KL1282GABHV020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting 200 MHz DDR clocking, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring deterministic latency and embedded DRAM density without refresh management overhead.

For engineers reviewing the S70KL1282GABHV020 datasheet, S70KL1282GABHV020 pinout, S70KL1282GABHV020 application, or S70KL1282GABHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), dual-voltage I/O support, configurable burst lengths (16–128 bytes), hybrid sleep/deep power down modes, and AEC-Q100 Grade 2 qualification for +105°C operation.

Technical Context

The device implements a stacked-die architecture-two 64 Mb DRAM dies sharing a single HYPERBUS™ interface-with independent refresh control per die. It uses LV-CMOS signaling on all pins and supports both single-ended (CK) and optional differential (CK/CK#) clocking to reduce jitter sensitivity in noisy environments.

HYPERBUS™ transactions begin with CS# assertion and six-byte command/address transfer over DQ[7:0], followed by initial access latency and DDR-aligned read/write bursts. RWDS operates bidirectionally: as output indicating refresh latency at transaction start, as read strobe during reads, and as write mask during writes; DCARS mode further shifts RWDS phase to center it within the read data eye.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for high-density PCB layouts with thermal pad grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHV020 and S70KL1282GABHV021, the S70KL1282GABHV020 uniquely delivers full 128 Mb capacity, DCARS timing enhancement for robust 200 MHz operation, and AEC-Q100 Grade 2 qualification-making it the only option meeting simultaneous high-density, high-speed, and extended-temperature requirements.

Availability

S70KL1282GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, AI edge inference accelerators, and medical diagnostic imaging modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1282GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The HYPERRAM™ product line targets high-performance embedded systems needing SRAM-like simplicity with DRAM density-designed specifically for MCU and SoC offload in automotive, industrial, and medical edge devices.

FAQ

What is the maximum supported clock frequency and corresponding data rate?

The S70KL1282GABHV020 supports up to 200 MHz DDR clocking, achieving 400 MBps (3,200 Mbps) peak data throughput. This is verified across both 1.8 V and 3.0 V VCC/VCCQ supply conditions, with tACC guaranteed ≤35 ns at this rate per Infineon's datasheet Rev. *D.

Does this device require external refresh circuitry from the host processor?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host sees it as pseudo-static RAM (PSRAM)-no refresh commands, timers, or scheduling are needed, simplifying firmware and reducing CPU overhead.

How does the RWDS signal function during read versus write operations?

RWDS is bidirectional: during reads, it outputs a strobe synchronized to read data; during writes, it serves as a byte-enable mask. At transaction start, it pulses to indicate refresh latency. With DCARS enabled, its phase is shifted relative to CK to center the transition within the read data eye-improving setup/hold margins at 200 MHz.

What are the valid operating temperature grades and associated AEC-Q100 qualifications?

This part is qualified to AEC-Q100 Grade 2 (–40°C to +105°C), meeting automotive under-hood requirements. It also supports Industrial Plus (–40°C to +105°C) and standard Industrial (–40°C to +85°C) grades. The "B" suffix in the OPN explicitly denotes Grade 2 qualification per Infineon's ordering matrix.