Infineon Technologies S70KL1282GABHV023

Overview

S70KL1282GABHV023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and 400 MBps throughput. It integrates two 64 Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power-down modes, and is packaged in a 24-ball FBGA for industrial and automotive applications including infotainment head units and ADAS domain controllers.

For engineers reviewing the S70KL1282GABHV023 datasheet, S70KL1282GABHV023 pinout, S70KL1282GABHV023 application, or S70KL1282GABHV023 equivalent, key selection considerations include HYPERBUS™ timing compliance, RWDS strobe behavior during read/write, partial array refresh support, and DCARS phase-shifted strobe configuration for timing margin optimization in high-speed memory interfaces.

Technical Context

The device implements a dual-die stacked architecture where only one 64 Mb die enters hybrid sleep or deep power-down at a time. Its HYPERBUS™ interface uses 8-bit DQ with single-ended or optional differential clock (CK/CK#) and bidirectional RWDS for latency indication and data masking.

Internal refresh logic manages self-refresh autonomously; host must observe initial access latency and limit burst duration to accommodate internal refresh cycles. DCARS mode shifts RWDS phase by one clock edge to center-align strobe transitions within the read data eye, improving setup/hold margins at 200 MHz DDR operation.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL1282GABHV023 and S70KL1282GABHV020, the S70KL1282GABHV023 uniquely delivers AEC-Q100 grade 2 qualification and guaranteed operation up to +105°C - critical for thermal-stressed automotive domains where the other variants cannot be substituted without derating or requalification.

Availability

S70KL1282GABHV023 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS domain controllers, and industrial HMI platforms requiring stable component supply, long-lifecycle availability, and AEC-Q100-compliant memory solutions.

Supply support for S70KL1282GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with leadership in automotive-grade DRAM and secure microcontrollers.

This part belongs to the HYPERRAM™ product line, designed specifically to replace legacy parallel PSRAM and QSPI+NOR combinations in bandwidth-constrained, pin-limited embedded systems requiring self-refresh capability and automotive reliability.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS serves three distinct roles: (1) as an output at transaction start to indicate refresh latency, (2) as a read data strobe aligned with DQ transitions during reads, and (3) as a write data mask input during writes. In DCARS mode, its phase is shifted by one CK edge during reads to center the strobe edge in the data eye - a hardware-level timing optimization not present in standard PSRAM.

Does S70KL1282GABHV023 support true simultaneous access to both 64 Mb dice?

No. The device uses a stacked-die architecture, but only one die is accessible at a time. Commands are routed to either die based on address mapping; hybrid sleep and deep power-down modes also apply to only one die per command. Linear bursts crossing the die boundary are explicitly unsupported per datasheet Section 2.1.

How does partial array refresh impact power consumption and timing predictability?

Partial array refresh reduces average current by refreshing only 1/8, 1/4, or 1/2 of the array per cycle instead of the full 128 Mb. This lowers typical standby current by up to 40% versus full refresh, with no impact on host-visible latency - refresh occurs transparently during idle intervals between transactions, preserving deterministic timing behavior.

Can the device operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended clock (CK only) is fully supported and requires 11 bus signals. Differential clock (CK/CK#) is optional and increases signal count to 12, primarily used to improve noise immunity in electrically noisy automotive environments. Both configurations support identical 200 MHz operation and timing specifications per datasheet Table 1.