Infineon Technologies S70KL1283DPBHA020

Overview

S70KL1283DPBHA020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clock rate and delivering 400 MBps data throughput. It integrates dual 64-Mb stacked dice, features RWDS-based timing control, configurable burst lengths (16–128 bytes), and supports Hybrid Sleep and Deep Power Down modes for low-power embedded systems.

For engineers reviewing the S70KL1283DPBHA020 datasheet, S70KL1283DPBHA020 pinout, S70KL1283DPBHA020 application, or S70KL1283DPBHA020 equivalent, key selection criteria include xSPI octal bus compatibility, 24-ball FBGA package fit, 1.8/3.0 V dual-voltage operation, RWDS-synchronized read/write strobing, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C).

Technical Context

This PSRAM implements a true self-refresh DRAM core with on-die refresh controller, eliminating host-side refresh management. Its xSPI octal interface uses CK/CK# differential clocking (12-signal mode) or single-ended CK (11-signal mode), with RWDS serving as bidirectional strobe-output during reads (data valid indicator), input during writes (mask signal), and optional DCARS phase-shifted variant for improved read eye alignment.

The device supports linear and wrapped burst configurations across 8-bit DQ[7:0], with burst termination at die boundaries prohibited in linear mode. Memory space is organized as two independent 64-Mb dies; only one die may enter Hybrid Sleep or Deep Power Down at a time, requiring explicit die-select register access for power-state coordination.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL1283DPBHA020, this Infineon part adds DCARS and AEC-Q100 Grade 2 support-critical for automotive timing margin and thermal robustness. Against Winbond's parallel PSRAM, it enables smaller PCB footprint, lower signal count, and native integration with modern xSPI-enabled MCUs.

Availability

S70KL1283DPBHA020 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI accelerators, and smart camera video pipelines requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1283DPBHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's HYPERRAM™ product line-designed specifically to replace parallel PSRAM and low-density LPDDR in resource-constrained, high-bandwidth embedded systems using simplified xSPI interfaces.

FAQ

Does S70KL1283DPBHA020 require external refresh circuitry?

No. The device contains an integrated self-refresh controller that automatically manages DRAM array refresh during idle periods. Host systems interact with it as a pseudo-static RAM-no refresh commands, timers, or scheduling logic are needed in firmware or hardware design.

Can both 64-Mb dice operate simultaneously in active mode?

Yes. Both dice share the same xSPI bus and respond to all commands unless explicitly isolated via die-select bits in Configuration Register 1. Concurrent access is not supported; arbitration is handled internally, and accesses are serialized per die.

What is the function of the RWDS signal during a WRITE transaction?

During WRITE, RWDS operates as an input byte mask: each rising edge samples one DQ[7:0] byte, enabling partial writes without read-modify-write cycles. This allows efficient updating of individual fields within a burst-aligned memory region.

Is DCARS enabled by default after power-up?

No. DCARS is disabled by default. It must be enabled by setting bit 7 of Configuration Register 1 (CR1) via a WRITE ANY REGISTER command. Once enabled, the RWDS output is phase-shifted by ½ CK cycle relative to CK during read transactions.