Infineon Technologies S70KL1283DPBHA023

Overview

S70KL1283DPBHA023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V operation and delivering up to 400 MBps data throughput at 200 MHz DDR clock rate. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and operates across industrial (–40°C to +85°C) and automotive AEC-Q100 Grade 2 (–40°C to +105°C) temperature ranges.

For engineers reviewing the S70KL1283DPBHA023 datasheet, S70KL1283DPBHA023 pinout, S70KL1283DPBHA023 application, or S70KL1283DPBHA023 equivalent, key selection criteria include xSPI octal bus timing compliance, RWDS strobe behavior in read/write transactions, partial array refresh support, DCARS phase-shifted read strobe capability, and dual-voltage I/O compatibility for microcontroller co-processor memory expansion.

Technical Context

This PSRAM implements a stacked-die architecture with independent refresh control per 64-Mb die, enabling selective entry into Hybrid Sleep or Deep Power Down mode on one die while the other remains active. Its xSPI octal interface uses 11–12 signals including CS#, CK/CK#, DQ[7:0], RWDS, and RESET#, with RWDS serving as bidirectional data strobe/mask and optional DDR center-aligned read strobe (DCARS) for timing margin optimization.

The device supports linear and wrapped burst configurations (8–64 clocks), configurable output drive strength, and four partial refresh granularities (1/8, 1/4, 1/2, full array). It requires no external refresh management - all self-refresh operations are handled internally during idle cycles, presenting static RAM-like behavior to the host controller.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHA020, S70KL1283DPBHA023 doubles capacity while preserving timing, power, and thermal behavior; versus S70KL2563DPBHA023, it offers lower cost and power for mid-tier applications where 128 Mb meets functional requirements.

Availability

S70KL1283DPBHA023 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI accelerators, and wireless gateways requiring stable component supply across extended temperature and long product lifecycles.

Supply support for S70KL1283DPBHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-bandwidth, low-pin-count PSRAM optimized for microcontroller and SoC memory expansion where DDR complexity and SRAM cost are prohibitive.

FAQ

Does S70KL1283DPBHA023 require external refresh circuitry?

No. The device contains fully autonomous self-refresh logic that manages DRAM cell refresh during idle cycles without host intervention. The host sees static RAM-like behavior - no refresh commands, timers, or scheduling are needed. Refresh occurs transparently using internal counters and timing circuits synchronized to the xSPI clock domain.

What is the function of the RWDS pin during write transactions?

During write transactions, RWDS serves as a write data mask (WDM) input. The host drives RWDS low to indicate valid data on DQ[7:0] for that clock cycle, and high to mask the corresponding byte. This enables precise byte-level write control without requiring full-width write operations, reducing unnecessary memory writes and power consumption.

Can both 64-Mb dice enter Deep Power Down simultaneously?

No. Due to its stacked-die architecture, only one die can be placed into Deep Power Down or Hybrid Sleep mode at a time. The other die remains accessible for read/write operations. This asymmetry enables partial memory retention during ultra-low-power states - critical for applications requiring background data logging while minimizing system-wide power draw.

Is DCARS functionality enabled by default?

No. DCARS (DDR Center-Aligned Read Strobe) is an optional feature controlled via Configuration Register 1 (CR1). When enabled, RWDS transitions are phase-shifted relative to CK to center the strobe edge within the read data eye. This must be configured via WRITE ANY REGISTER command before read-intensive operation; default behavior uses standard RWDS timing aligned to CK.