Infineon Technologies S70KL1283DPBHI023

Overview

S70KL1283DPBHI023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM architecture, octal xSPI interface, and dual-voltage support (1.8 V/3.0 V). It delivers up to 400 MBps data throughput at 200 MHz DDR clock rate, uses 24-ball FBGA packaging, operates from –40°C to +105°C (Industrial Plus), and serves as high-bandwidth, low-latency memory for microcontroller-based edge AI inference buffers.

For engineers reviewing the S70KL1283DPBHI023 datasheet, S70KL1283DPBHI023 pinout, S70KL1283DPBHI023 application, or S70KL1283DPBHI023 equivalent, key selection criteria include octal xSPI timing compliance, RWDS strobe phase alignment capability, hybrid sleep/deep power down current specs (330 µA @ 2.0 V), burst configuration flexibility (16–128 byte wrapped/linear), and stacked-die refresh isolation behavior.

Technical Context

This PSRAM integrates two 64-Mb DRAM dies in a single package, with independent refresh control per die-only one die may enter Hybrid Sleep or Deep Power Down at a time. Its xSPI interface supports command/address/data multiplexing over 8 DQ lines plus RWDS, CK/CK#, CS#, and RESET#.

The device implements DDR transfers on both clock edges, supports DCARS for center-aligned read strobe positioning, and provides configurable output drive strength and burst length (16/32/64/128 bytes), enabling precise timing margin optimization in high-speed embedded memory subsystems.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL1283DPBHI020 and W958D8MWYX1I, the S70KL1283DPBHI023 uniquely combines AEC-Q100 Grade 2 qualification, DCARS timing enhancement, and dual-voltage operation - making it the only option for thermally demanding automotive or industrial edge AI deployments requiring guaranteed 200 MHz DDR stability.

Availability

S70KL1283DPBHI023 is available at Aetrix Electronics and suitable for edge AI inference buffers, automotive ADAS preprocessing units, and industrial HMI frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1283DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT applications.

The HYPERRAM™ product line delivers high-speed, low-power PSRAMs optimized for microcontroller-based systems needing more memory bandwidth than serial NOR flash but less complexity than parallel DDR.

FAQ

What is the function of the RWDS signal in S70KL1283DPBHI023?

RWDS is a bidirectional strobe: during reads, it outputs a phase-shifted clock aligned to center the data eye (DCARS mode); during writes, it acts as a write mask input. Its timing is tightly coupled to CK and enables reliable DDR data capture without external delay tuning.

Does S70KL1283DPBHI023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that automatically manages DRAM array refresh during idle periods. The host processor interacts with it as if it were static RAM - no refresh commands or timing constraints are exposed to software.

Can both 64-Mb dies enter Deep Power Down simultaneously?

No. Due to stacked-die architecture, only one die can be placed into Deep Power Down or Hybrid Sleep mode at a time. The other die remains powered and retains data, enabling partial memory retention during low-power states.

What is the significance of the "PBH" suffix in S70KL1283DPBHI023?

The "PBH" denotes Infineon's 24-ball FBGA package with 0.8 mm pitch and industrial-plus temperature grade (–40°C to +105°C). The "I023" indicates tape-and-reel packaging, RoHS compliance, and specific wafer lot traceability coding per Infineon's ordering nomenclature.