Infineon Technologies S70KL1283DPBHV020

Overview

S70KL1283DPBHV020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features RWDS-based timing control, configurable burst lengths (16–128 bytes), and supports Hybrid Sleep and Deep Power Down modes for low-power embedded systems.

For engineers reviewing the S70KL1283DPBHV020 datasheet, S70KL1283DPBHV020 pinout, S70KL1283DPBHV020 application, or S70KL1283DPBHV020 equivalent, key selection criteria include xSPI octal bus compatibility, 24-ball FBGA package fit, industrial-plus (–40°C to +105°C) temperature rating, RWDS strobe behavior in read/write cycles, and partial array refresh support for power-constrained host processors.

Technical Context

This PSRAM implements a true self-refresh DRAM core with on-die refresh controller, eliminating host-side refresh management. Its xSPI octal interface uses CK/CK# differential clock option (12-signal mode) or single-ended CK (11-signal mode), with RWDS serving dual roles: as read-data strobe (center-aligned via DCARS) and write-data mask.

The device supports linear and wrapped burst modes across 8-bit DQ bus, with configurable drive strength and register-accessible configuration registers (CR0/CR1) for latency, power mode, and DCARS enablement. Stacked-die architecture restricts Hybrid Sleep and Deep Power Down to one die at a time.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-276AC mechanical outline. Pin assignment validated per Infineon datasheet Rev. *C (pp. 10–11, 51–52).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL1283DPBHV020 and W958D8MBYA1I, the S70KL1283DPBHV020 uniquely delivers DCARS-enhanced timing margin, dual-voltage I/O flexibility, and stacked-die partial refresh - making it optimal for high-reliability, high-throughput embedded systems where timing predictability and power efficiency are co-constrained.

Availability

S70KL1283DPBHV020 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI accelerators, and medical imaging preview systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1283DPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained MCUs and SoCs - delivering PSRAM performance without external refresh logic or complex bus controllers.

FAQ

Does S70KL1283DPBHV020 require external refresh circuitry?

No. The device contains an integrated self-refresh controller that autonomously manages DRAM array refresh during idle periods. Host processors interact with it as a static RAM - no refresh commands, timers, or scheduling logic are needed in firmware or hardware design.

What is the function of the RWDS signal in read versus write operations?

In read operations, RWDS is output as a center-aligned read strobe (enabled by DCARS), synchronized to data eye center for reliable capture. In write operations, RWDS is input as a write data mask, allowing selective byte enablement without additional address/control lines.

Can both 64-Mb dice enter Deep Power Down simultaneously?

No. Due to stacked-die architecture, only one die can be placed into Deep Power Down or Hybrid Sleep mode at a time. The other die remains powered and accessible, enabling partial memory retention during ultra-low-power states.

Is the 24-ball FBGA package compatible with standard reflow profiles?

Yes. The package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Board layout must follow Infineon's recommended pad geometry and thermal relief patterns in datasheet section 11.2.