Infineon Technologies S70KL1283DPBHV023

Overview

S70KL1283DPBHV023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, 1.8 V/3.0 V dual-voltage support, 200 MHz max clock rate, and 24-ball FBGA package. It delivers up to 400 MBps throughput in linear burst mode and supports partial array refresh for low-power embedded systems requiring high-bandwidth, low-latency external memory-such as automotive ADAS display buffers and industrial HMI frame stores.

For engineers reviewing the S70KL1283DPBHV023 datasheet, S70KL1283DPBHV023 pinout, S70KL1283DPBHV023 application, or S70KL1283DPBHV023 equivalent, key selection criteria include octal xSPI timing compliance, RWDS strobe behavior under DDR read/write, configurable burst lengths (16–128 bytes), hybrid sleep/deep power down current specs (330–360 µA), and AEC-Q100 Grade 2 qualification for +105°C operation.

Technical Context

This PSRAM integrates two stacked 64-Mb DRAM dies sharing a single octal xSPI bus, with on-die refresh control eliminating host-managed refresh cycles. Its architecture uses CK/CK# differential clocking (12-signal mode) or single-ended CK (11-signal mode), RWDS as bidirectional strobe/mask, and DCARS for center-aligned DDR read capture.

It implements configurable output drive strength, linear/wrapped burst modes (8–64 clocks), and per-die power state control: only one die enters Hybrid Sleep or Deep Power Down at a time, enabling asymmetric low-power partitioning in multi-die memory subsystems.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball map defined per Infineon datasheet 002-29418 Rev. *C Section 11.2. Package marking includes "S70KL1283DPBHV023" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHV020, S70KL1283DPBHV023 doubles capacity and adds DCARS for tighter read timing; versus S70KL2563DPBHV023, it trades density and extended temperature for lower cost and simpler 1.8/3.0 V supply design.

Availability

S70KL1283DPBHV023 is available at Aetrix Electronics and suitable for automotive digital cockpit systems, industrial HMI panels, edge AI accelerators, and medical imaging preview buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1283DPBHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

S70KL1283 belongs to the HYPERRAM™ PSRAM product line, designed to replace legacy SRAM and LPDDR in bandwidth-constrained, low-pin-count embedded systems where simplicity, reliability, and AEC-Q100 compliance are critical.

FAQ

What voltage levels does S70KL1283DPBHV023 support for VCC and VCCQ?

S70KL1283DPBHV023 supports dual supply voltages: VCC (core) and VCCQ (I/O) each operate at either 1.8 V ±0.15 V or 3.0 V ±0.3 V, as specified in Section 9.4.2 of the datasheet. The device auto-detects VCCQ level and configures I/O drive strength accordingly; mixed-voltage operation (e.g., 1.8 V VCC with 3.0 V VCCQ) is not supported.

Does S70KL1283DPBHV023 require external refresh commands from the host controller?

No. S70KL1283DPBHV023 incorporates autonomous self-refresh logic that manages all DRAM array refresh cycles internally. The host only issues standard xSPI commands (READ/WRITE/REGISTER ACCESS); no refresh commands, timers, or scheduling are needed-enabling true SRAM-like ease of use in resource-constrained microcontrollers.

How does the RWDS signal behave during write transactions?

During write transactions, RWDS functions as an input write data mask: each bit corresponds to one DQ lane and gates whether that byte is written to memory. When RWDS is low, the associated DQ byte is written; when high, it is masked. This enables partial writes without read-modify-write cycles, reducing bus traffic and latency in burst-oriented systems.

Can both 64-Mb dies enter Deep Power Down simultaneously?

No. As stated in the datasheet footnote on page 2, only one die may enter Deep Power Down or Hybrid Sleep mode at a time. The second die remains powered and accessible. This asymmetry allows partial memory retention during ultra-low-power states-critical for applications like automotive always-on display buffers where part of the frame must remain visible while background layers sleep.