Infineon Technologies S70KL1283GABHB023

Overview

S70KL1283GABHB023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-power embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S70KL1283GABHB023 datasheet, S70KL1283GABHB023 pinout, S70KL1283GABHB023 application, or S70KL1283GABHB023 equivalent, key selection criteria include xSPI octal timing compliance, RWDS strobe behavior under DCARS mode, partial array refresh granularity, 24-ball FBGA mechanical fit, and AEC-Q100 Grade 2 temperature support (–40°C to +105°C).

Technical Context

This PSRAM implements a dual-die stacked architecture where only one 64-Mb die enters Hybrid Sleep or Deep Power Down at a time. Its xSPI octal interface uses 11–12 signals including CS#, CK/CK#, RWDS, DQ[7:0], and RESET#, with RWDS serving as bidirectional strobe-output for read latency indication and write mask input.

The device supports DDR transfers on both clock edges, configurable linear/wrapped bursts, and optional DDR center-aligned read strobe (DCARS) that phase-shifts RWDS by one clock cycle to align transitions within the read data eye, improving timing margin at 200 MHz.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-279B mechanical outline. Pin assignments are defined per Infineon datasheet 002-29418 Rev. *C, Section 11.1 and 11.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHB020 and W958D8MBJX1I, the S70KL1283GABHB023 delivers higher bandwidth, tighter access timing, and advanced power management-making it optimal for thermally constrained, high-frame-rate, or safety-rated applications where deterministic xSPI timing and per-die power control matter.

Availability

S70KL1283GABHB023 is available at Aetrix Electronics and suitable for automotive ADAS display buffers, industrial HMI frame memory, edge AI inference scratchpads, and smart camera video preprocessing buffers requiring stable component supply across extended temperature ranges.

Supply support for S70KL1283GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line delivers high-speed, low-power pseudo-static memory using self-refresh DRAM architecture to replace legacy SRAM in bandwidth-constrained embedded systems.

FAQ

What is the difference between S70KL1283GABHB023 and standard DDR SDRAM?

The S70KL1283GABHB023 is a self-refresh PSRAM with octal xSPI interface-not a DDR SDRAM. It requires no external memory controller or refresh commands; instead, it manages internal DRAM refresh autonomously. Its xSPI interface uses fewer pins than DDR, eliminates complex timing calibration, and supports simpler host firmware integration while delivering comparable bandwidth at lower system complexity.

Does S70KL1283GABHB023 support both 1.8 V and 3.0 V I/O simultaneously?

No. The device operates with a single VCC/VCCQ supply voltage-either 1.8 V ±0.1 V or 3.0 V ±0.3 V-not both simultaneously. Voltage selection is fixed at power-up and determines maximum clock rate (200 MHz in both cases), drive strength, and DC characteristics per datasheet Section 9.4.2.

How does RWDS function during write transactions?

During write transactions, RWDS serves as a write data mask: each bit corresponds to one DQ lane and controls whether that byte is written (RWDS = high) or masked (RWDS = low). This enables partial writes without read-modify-write cycles, reducing bus traffic and power consumption in applications with irregular data updates.

Is DCARS enabled by default, and how is it configured?

DCARS is disabled by default. It is enabled by setting bit 7 of Configuration Register 1 (CR1) via WRITE ANY REGISTER command. Once enabled, RWDS transitions are phase-shifted by one CK cycle during reads, improving setup/hold margins. The shift applies only to read transactions and does not affect write masking or refresh latency signaling.