Infineon Technologies S70KL1283GABHI020

Overview

S70KL1283GABHI020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, supporting 1.8 V/3.0 V operation and delivering up to 400 MBps throughput at 200 MHz DDR clock rate. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), RWDS bidirectional strobe, and supports Hybrid Sleep and Deep Power Down modes for low-power embedded systems.

For engineers reviewing the S70KL1283GABHI020 datasheet, S70KL1283GABHI020 pinout, S70KL1283GABHI020 application, or S70KL1283GABHI020 equivalent, key selection criteria include octal xSPI timing compliance, RWDS phase alignment capability, partial array refresh support, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS memory expansion.

Technical Context

This PSRAM implements a true self-refresh DRAM core with on-die refresh control logic, eliminating host-managed refresh cycles. Its octal xSPI interface uses 11–12 signals including CS#, CK/CK#, DQ[7:0], RWDS, and RESET#, enabling high-bandwidth, low-pin-count memory expansion in resource-constrained SoC designs.

The device supports DDR transfers on both clock edges, configurable output drive strength, and DCARS mode for center-aligned read strobe timing-critical for maintaining data eye integrity at 200 MHz. Internal logic manages die-level power state transitions, with only one 64-Mb die active in Hybrid Sleep or Deep Power Down.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with ball map matching JEDEC MO-279AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL1283DPBHI020, the S70KL1283GABHI020 offers identical functionality with updated Infineon documentation and lifecycle support; versus W9825G6JH-6I, it provides xSPI simplicity and self-refresh autonomy at lower pin count and power, despite lower density.

Availability

S70KL1283GABHI020 is available at Aetrix Electronics and suitable for automotive infotainment, industrial HMI, edge AI sensor hubs, and medical imaging preview systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KL1283GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line delivers high-speed, low-pin-count PSRAM for memory-constrained embedded systems, targeting seamless integration with microcontrollers and application processors lacking dedicated DRAM controllers.

FAQ

What voltage levels does the S70KL1283GABHI020 support for VCC and VCCQ?

The device supports dual supply operation: VCC and VCCQ may each be independently set to either 1.8 V ±0.15 V or 3.0 V ±0.3 V, as specified in Section 9.4.2 of the datasheet. Both supplies must operate at the same nominal voltage level (i.e., 1.8 V or 3.0 V) during normal operation; mixed-voltage operation is not supported.

Does the S70KL1283GABHI020 require external refresh commands from the host controller?

No. The device contains fully autonomous on-die refresh logic that executes periodic row refreshes without host intervention. The host only issues standard xSPI commands (READ/WRITE/ENABLE); all refresh activity occurs transparently during idle cycles or masked by internal arbitration, preserving the appearance of static RAM behavior.

Can both 64-Mb dice enter Deep Power Down simultaneously?

No. Due to its stacked-die architecture, only one die (Die 0 or Die 1) can be placed into Deep Power Down or Hybrid Sleep mode at a time. The other die remains powered and accessible. This constraint is documented in Note 1 of the datasheet and affects total memory availability during ultra-low-power states.

Is DCARS mode enabled by default after power-up?

No. DCARS mode is disabled by default. It must be explicitly enabled by writing '1' to bit [1] of Configuration Register 1 (CR1) via the WRITE ANY REGISTER command. Once enabled, the RWDS signal transitions are phase-shifted relative to CK to achieve center-aligned strobing during read operations.