Infineon Technologies S70KL1283GABHV023

Overview

S70KL1283GABHV023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-power memory expansion in microcontroller-based edge devices.

For engineers reviewing the S70KL1283GABHV023 datasheet, S70KL1283GABHV023 pinout, S70KL1283GABHV023 application, or S70KL1283GABHV023 equivalent, key selection criteria include octal xSPI timing compliance, RWDS strobe behavior under DCARS mode, partial array refresh support, industrial/automotive temperature grading (–40°C to +105°C), and FBGA-24 package compatibility with high-density PCB layouts.

Technical Context

The device implements an octal xSPI interface with 11–12 signal bus count depending on single-ended or differential clock configuration, using CK/CK# and bidirectional RWDS for precise DDR read/write strobing. Its internal logic includes dual-die arbitration, on-die refresh control, and register-mapped configuration (CR0/CR1) for burst type, drive strength, and power mode selection.

It supports linear and wrapped burst transfers across 64-byte boundaries per die, with hybrid burst mode enabling one wrapped burst followed by linear burst - but no linear bursts crossing die boundaries. DCARS functionality phase-shifts RWDS relative to CK to center-align strobe edges within the read data eye, improving timing margin at 200 MHz.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 array, 0.8 mm pitch) with ball-out optimized for signal integrity and thermal dissipation in space-constrained embedded designs. Pin assignment validated per Infineon datasheet Rev. *C, Section 11.1–11.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL1283DPBHV020, S70KL1283GABHV023 offers tighter DCARS timing control and hybrid burst flexibility; versus W9825G6JH-15, it delivers 2.5× higher bandwidth in half the pin count and enables simpler, lower-noise PCB layout.

Availability

S70KL1283GABHV023 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI accelerators, and smart camera systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70KL1283GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERRAM™ family, designed specifically to bridge the performance gap between serial NOR flash and parallel DRAM in MCU- and SoC-based systems requiring high-speed, low-pin-count external memory.

FAQ

What is the function of the RWDS pin in S70KL1283GABHV023?

RWDS is a bidirectional strobe pin: output during reads to indicate data validity and align with DDR sampling edges; input during writes to serve as byte mask control. With DCARS enabled, RWDS is phase-shifted by one CK cycle to center its transition in the read data eye - a hardware-level timing optimization critical for 200 MHz reliability.

Does S70KL1283GABHV023 support true linear bursts across the full 128 Mb address space?

No. Due to its dual-die stacked architecture, linear burst transfers are limited to within a single 64-Mb die. Crossing the die boundary requires explicit address sequencing - the device does not support transparent linear bursts spanning both dice, as confirmed in Section 4.12 of the datasheet.

How does Deep Power Down mode operate across the two internal dice?

Deep Power Down can be entered independently per die - only one die may be placed in DPD at a time. The other remains active or in standby. This per-die control is enforced by the internal state machine and requires separate DPD entry commands addressed to each die's register space, as defined in Section 4.5 of the datasheet.

Is the FBGA-24 package of S70KL1283GABHV023 compatible with standard reflow profiles?

Yes - the 24-ball FBGA uses Pb-free (RoHS-compliant) solder balls and is qualified for standard IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C. Thermal resistance (θ_JA) is specified at 40°C/W, and board layout guidelines for thermal pad grounding and decoupling are provided in Section 11.2 of the datasheet.